Inventor · disambiguated record
Seung-Jae Baik
Also filed as: BAIK SEUNG-JAE
17 granted patents·12 pending applications·152 citations·filing 2004–2024
93Inventor score
Files withSAMSUNG ELECTRONICS CO LTD20HUO ZONG-LIANG3BAIK SEUNG-JAE2SON YONG-HOON2AMOREPACIFIC CORP1
Top patents by PatentIndex Score
29 records- 0195US7338862B2Methods of fabricating a single transistor floating body DRAM cell having recess channel transistor structureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 4, 2008·40 cites·14 claims
- 0294US7368788B2SRAM cells having inverters and access transistors therein with vertical fin-shaped active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 6, 2008·33 cites·7 claims
- 0391US8923057B2Three-dimensional semiconductor memory device with active patterns and electrodes arranged above a substrateSON YONG-HOON·Filed 2010·Granted Dec 30, 2014·13 cites·17 claims
- 0488US8084316B2Method of fabricating single transistor floating-body DRAM devices having vertical channel transistor structuresHUO ZONG-LIANG·Filed 2006·Granted Dec 27, 2011·18 cites·12 claims
- 0588US7482206B2Semiconductor devices having nano-line channels and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 27, 2009·17 cites·16 claims
- 0680US8377434B2Cosmetic composition for exfoliating skin keratinAMOREPACIFIC CORP·Filed 2006·Granted Feb 19, 2013·3 cites·4 claims
- 0773US8405137B2Single transistor floating-body DRAM devices having vertical channel transistor structuresHUO ZONG-LIANG·Filed 2011·Granted Mar 26, 2013·3 cites·12 claims
- 0871US8114735B2Method of manufacturing a non-volatile memory deviceKIM HONG-SUK·Filed 2007·Granted Feb 14, 2012·4 cites·15 claims
- 0971US7488648B2Methods of fabricating scalable two-transistor memory devices having metal source/drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 10, 2009·8 cites·6 claims
- 1068US2025220903A1Three-dimensional semiconductor memory device and electronic system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1164US7973355B2Nonvolatile memory devices with multiple layers having band gap relationships among the layersSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 5, 2011·2 cites·20 claims
- 1264US7384841B2DRAM device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 10, 2008·5 cites·11 claims
- 1362US7795659B2DRAM device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 14, 2010·4 cites·15 claims
- 1462US2025386501A1Semiconductor memory device and electronic system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1561US2008169501A1Flash memory device with hybrid structure charge trap layer and method of manufacturing sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1660US2025159898A1Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1759US2025133738A1Semiconductor device and electronic system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1858US7791130B2Non-volatile memory device and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 7, 2010·1 cites·10 claims
- 1956US8460999B2Non-volatile memory devices with multiple layers having band gap relationships among the layersBAIK SEUNG-JAE·Filed 2011·Granted Jun 11, 2013·1 cites·20 claims
- 2056US2025078929A1Semiconductor device and electronic system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2148US2009114904A1Semiconductor devices having nano-line channelsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2247US7566615B2Methods of fabricating scalable two transistor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 28, 2009·0 cites·19 claims
- 2346US2008128802A1Single transistor floating body dram cell having recess channel transistor structureHUO ZONG-LIANG·Filed 2008·Application pending·0 cites
- 2443US2009134451A1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2540US7274066B2Semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 25, 2007·0 cites·10 claims
- 2639US7042107B2Scalable two transistor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 9, 2006·0 cites·20 claims
- 2739US2007007576A1Multi-bit storageable non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2837US2011237055A1Methods of Manufacturing Stacked Semiconductor DevicesSON YONG-HOON·Filed 2011·Application pending·0 cites
- 2932US2006043457A1Nonvolatile semiconductor memory device having a recessed gate and a charge trapping layer and methods of forming the same, and methods of operating the sameBAIK SEUNG-JAE·Filed 2005·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Seung-Jae Baik files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →