Inventor · disambiguated record
Seongjae Cho
Also filed as: CHO SEONGJAE
18 granted patents·1 pending application·30 citations·filing 2011–2019
89Inventor score
Files withUNIV GACHON IND ACAD COOP FOUND10UNIV SEOUL NAT R & DB FOUND4PARK BYUNG GOOK2GACHON UNIV OF INDUSTRY-ACADEMIC COOPERATION FOUNDATION1HEO HOON1
Top patents by PatentIndex Score
19 records- 0183US9799706B2Resistive random access memory device embedding tunnel insulating layer and memory array using the same and fabrication method thereofUNIV SEOUL NAT R & DB FOUND·Filed 2016·Granted Oct 24, 2017·6 cites·20 claims
- 0283US9136363B2Compound tunneling field effect transistor integrated on silicon substrate and method for fabricating the samePARK BYUNG-GOOK·Filed 2011·Granted Sep 15, 2015·9 cites·52 claims
- 0377US9935189B2Transistor having germanium channel on silicon nanowire and fabrication method thereofUNIV GACHON IND ACAD COOP FOUND·Filed 2016·Granted Apr 3, 2018·4 cites·8 claims
- 0476US8786004B23D stacked array having cut-off gate line and fabrication method thereofPARK BYUNG-GOOK·Filed 2011·Granted Jul 22, 2014·5 cites·10 claims
- 0568US11158732B2One-transistor DRAM cell device having quantum well structureUNIV GACHON IND ACAD COOP FOUND·Filed 2019·Granted Oct 26, 2021·1 cites·2 claims
- 0668US10714479B2One-transistor dram cell device based on polycrystalline silicon with FinFET structure and fabrication method thereofGACHON UNIV OF INDUSTRY—ACADEMIC COOPERATION FOUNDATION·Filed 2018·Granted Jul 14, 2020·1 cites·7 claims
- 0768US8878251B2Silicon-compatible compound junctionless field effect transistorUNIV SEOUL NAT R & DB FOUND·Filed 2012·Granted Nov 4, 2014·3 cites·20 claims
- 0864US9768381B2Resistive random access memory device having a nano-scale tip, memory array using the same and fabrication method thereofUNIV SEOUL NAT R & DB FOUND·Filed 2015·Granted Sep 19, 2017·1 cites·6 claims
- 0957US8847204B2Germanium electroluminescence device and fabrication method of the sameUNIV SEOUL NAT R & DB FOUND·Filed 2013·Granted Sep 30, 2014·0 cites·12 claims
- 1055US11296086B2Feedback 1T DRAM device having localized partial insulating layersUNIV GACHON IND ACAD COOP FOUND·Filed 2019·Granted Apr 5, 2022·0 cites·17 claims
- 1152US10714477B2SiGe p-channel tri-gate transistor based on bulk silicon and fabrication method thereofUNIV GACHON IND ACAD COOP FOUND·Filed 2019·Granted Jul 14, 2020·0 cites·7 claims
- 1251US9245990B2Silicon-compatible germanium-based transistor with high-hole-mobilityUNIV GACHON IND ACAD COOP FOUND·Filed 2014·Granted Jan 26, 2016·0 cites·12 claims
- 1348US12154017B2Integrated circuit emulating neural system with neuron circuit and synapse device array and fabrication method thereofSEOUL NAT UNIV R&DB FOUNDATION·Filed 2018·Granted Nov 26, 2024·0 cites·4 claims
- 1448US10790359B2Intelligent semiconductor device having SiGe quantum wellUNIV GACHON IND ACAD COOP FOUND·Filed 2019·Granted Sep 29, 2020·0 cites·15 claims
- 1544US2018047729A1SiGe P-CHANNEL TRI-GATE TRANSISTOR BASED ON BULK SILICON AND FABRICATION METHOD THEREOFUNIV GACHON IND ACAD COOP FOUND·Filed 2016·Application pending·0 cites
- 1643US10068971B2Junctionless field-effect transistor having ultra-thin low-crystalline-silicon channel and fabrication method thereofUNIV GACHON IND ACAD COOP FOUND·Filed 2015·Granted Sep 4, 2018·0 cites·4 claims
- 1742US10090389B2Semiconductor memory device and fabrication method thereofHEO HOON·Filed 2017·Granted Oct 2, 2018·0 cites·10 claims
- 1840US10991813B1Fabrication method of semiconductor device having SIGe shell channel and semiconductor device fabricated by the sameUNIV GACHON IND ACAD COOP FOUND·Filed 2019·Granted Apr 27, 2021·0 cites·19 claims
- 1934US10651316B2Synaptic semiconductor device and neural networks using the sameUNIV GACHON IND ACAD COOP FOUND·Filed 2018·Granted May 12, 2020·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →