Inventor · disambiguated record
Seiichi Iwamatsu
Also filed as: IWAMATSU SEIICHI
20 granted patents·1 pending application·666 citations·filing 1975–2006
96Inventor score
Files withSEIKO EPSON CORP9SUWA SEIKOSHA KK4SI DIAMOND TECHN INC3HITACHI LTD2VLSI TECHNOLOGY RES ASS2
Top patents by PatentIndex Score
21 records- 0196US5294821AThin-film SOI semiconductor device having heavily doped diffusion regions beneath the channels of transistorsSEIKO EPSON CORP·Filed 1991·Granted Mar 15, 1994·184 cites·6 claims
- 0296US4538291AX-ray sourceSUWA SEIKOSHA KK·Filed 1982·Granted Aug 27, 1985·114 cites·14 claims
- 0395US5142640ATrench gate metal oxide semiconductor field effect transistorSEIKO EPSON CORP·Filed 1989·Granted Aug 25, 1992·110 cites·3 claims
- 0490US4041518AMIS semiconductor device and method of manufacturing the sameHITACHI LTD·Filed 1976·Granted Aug 9, 1977·63 cites·31 claims
- 0580US7011927B2Electron beam duplication lithography method and apparatusSI DIAMOND TECHN INC·Filed 2005·Granted Mar 14, 2006·6 cites·10 claims
- 0674US4576851ASemiconductor substrateSUWA SEIKOSHA KK·Filed 1985·Granted Mar 18, 1986·36 cites·8 claims
- 0768US4231657ALight-reflection type pattern forming systemVLSI TECHNOLOGY RES ASS·Filed 1979·Granted Nov 4, 1980·17 cites·15 claims
- 0867US4404236AHigh pressure chemical vapor depositionSUWA SEIKOSHA KK·Filed 1981·Granted Sep 13, 1983·21 cites·13 claims
- 0964US4902897AIon beam gun and ion beam exposure deviceSEIKO EPSON CORP·Filed 1987·Granted Feb 20, 1990·12 cites·42 claims
- 1060US5179426AJosephson deviceSEIKO EPSON CORP·Filed 1988·Granted Jan 12, 1993·19 cites·8 claims
- 1158US5071832AField effect type josephson transistorSEIKO EPSON CORP·Filed 1989·Granted Dec 10, 1991·17 cites·8 claims
- 1257US7306896B2Electron beam duplication lithography methodSI DIAMOND TECHN INC·Filed 2006·Granted Dec 11, 2007·0 cites·3 claims
- 1354US4043024AMethod of manufacturing a semiconductor storage deviceHITACHI LTD·Filed 1975·Granted Aug 23, 1977·14 cites·2 claims
- 1453US5327011ASemiconductor device with enhanced via or contact hole connection between an interconnect layer and a connecting regionSEIKO EPSON CORP·Filed 1992·Granted Jul 5, 1994·21 cites·8 claims
- 1547US4348804AMethod of fabricating an integrated circuit device utilizing electron beam irradiation and selective oxidationVLSI TECHNOLOGY RES ASS·Filed 1979·Granted Sep 14, 1982·11 cites·6 claims
- 1643US5119170AThin film metal interconnects in integrated circuit structures to reduce circuit operation speed delaySEIKO EPSON CORP·Filed 1991·Granted Jun 2, 1992·13 cites·2 claims
- 1733US2007230767A1Method for Displaying Bioinformation Using Millimeter-Wave Band Electromagnetic Wave, Device for Acquiring and Displaying BioinformationINTELLECTUAL PROPERTY BANK·Filed 2005·Application pending·0 cites
- 1832US6849856B1Electron beam duplication lithography method and apparatusSI DIAMOND TECHN INC·Filed 2001·Granted Feb 1, 2005·0 cites·15 claims
- 1932US5504037AMethod of forming optimized thin film metal interconnects in integrated circuit structures of apparatus to reduce circuit operational delaySEIKO EPSON CORP·Filed 1993·Granted Apr 2, 1996·3 cites·3 claims
- 2032US4401738AX-Ray lithography maskSUWA SEIKOSHA KK·Filed 1981·Granted Aug 30, 1983·4 cites·11 claims
- 2130US5258219AOptimized thin film metal interconnects in integrated circuit structures of apparatus to reduce circuit operational delaySEIKO EPSON CORP·Filed 1992·Granted Nov 2, 1993·1 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →