Inventor · disambiguated record
Sean King
Also filed as: KING SEAN · KING SEAN J · KING SEAN W · KING SEAN WESLEY
32 granted patents·8 pending applications·725 citations·filing 2000–2025
97Inventor score
Top patents by PatentIndex Score
40 records- 0198US8178436B2Adhesion and electromigration performance at an interface between a dielectric and metalKING SEAN·Filed 2006·Granted May 15, 2012·467 cites·14 claims
- 0296US7790631B2Selective deposition of a dielectric on a self-assembled monolayer-adsorbed metalINTEL CORP·Filed 2006·Granted Sep 7, 2010·80 cites·8 claims
- 0395US9754821B2Conformal low temperature hermetic dielectric diffusion barriersINTEL CORP·Filed 2016·Granted Sep 5, 2017·9 cites·10 claims
- 0495US9330963B2Conformal low temperature hermetic dielectric diffusion barriersKING SEAN·Filed 2011·Granted May 3, 2016·23 cites·10 claims
- 0593US8143159B2Fabrication of interconnects in a low-k interlayer dielectricsKING SEAN·Filed 2010·Granted Mar 27, 2012·17 cites·17 claims
- 0692US8785261B2Microelectronic transistor having an epitaxial graphene channel layerKING SEAN·Filed 2010·Granted Jul 22, 2014·17 cites·25 claims
- 0790US12300537B2Conformal low temperature hermetic dielectric diffusion barriersINTEL CORP·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 0887US9935002B2Conformal low temperature hermetic dielectric diffusion barriersINTEL CORP·Filed 2017·Granted Apr 3, 2018·2 cites·20 claims
- 0987US8461683B2Self-forming, self-aligned barriers for back-end interconnects and methods of making sameYOO HUI JAE·Filed 2011·Granted Jun 11, 2013·9 cites·17 claims
- 1086US12040226B2Conformal low temperature hermetic dielectric diffusion barriersINTEL CORP·Filed 2023·Granted Jul 16, 2024·0 cites·10 claims
- 1186US8039920B1Methods for forming planarized hermetic barrier layers and structures formed therebyINTEL CORP·Filed 2010·Granted Oct 18, 2011·7 cites·8 claims
- 1285US12394716B2Integrated circuit interconnect structures with graphene capINTEL CORP·Filed 2021·Granted Aug 19, 2025·1 cites·19 claims
- 1385US8120114B2Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gateOTT ANDREW·Filed 2006·Granted Feb 21, 2012·13 cites·17 claims
- 1485US7816218B2Selective deposition of amorphous silicon films on metal gatesINTEL CORP·Filed 2008·Granted Oct 19, 2010·9 cites·25 claims
- 1585US2025285917A1Conformal low temperature hermetic dielectric diffusion barriersINTEL CORP·Filed 2025·Application pending·0 cites
- 1684US7759262B2Selective formation of dielectric etch stop layersINTEL CORP·Filed 2008·Granted Jul 20, 2010·12 cites·19 claims
- 1783US11670545B2Conformal low temperature hermetic dielectric diffusion barriersINTEL CORP·Filed 2022·Granted Jun 6, 2023·0 cites·20 claims
- 1882US2024203786A1Self-forming, self-aligned barriers for back-end interconnects and methods of making sameTAHOE RES LTD·Filed 2024·Application pending·0 cites
- 1981US10301719B1Amorphous hydrogenated boron carbide low-k dielectric and method of making the sameUNIV MISSOURI·Filed 2016·Granted May 28, 2019·6 cites·14 claims
- 2080US11587827B2Conformal low temperature hermetic dielectric diffusion barriersINTEL CORP·Filed 2022·Granted Feb 21, 2023·0 cites·25 claims
- 2180US7812455B2Interconnect in low-k interlayer dielectricsINTEL CORP·Filed 2008·Granted Oct 12, 2010·8 cites·6 claims
- 2277US8088665B2Method of forming self-aligned low resistance contact layerRACHMADY WILLY·Filed 2008·Granted Jan 3, 2012·5 cites·20 claims
- 2376US11251076B2Conformal low temperature hermetic dielectric diffusion barriersINTEL CORP·Filed 2020·Granted Feb 15, 2022·0 cites·20 claims
- 2475US6761625B1Reclaiming virgin test wafersINTEL CORP·Filed 2003·Granted Jul 13, 2004·16 cites·10 claims
- 2574US6974772B1Integrated low-k hard maskINTEL CORP·Filed 2004·Granted Dec 13, 2005·17 cites·8 claims
- 2672US10763161B2Conformal low temperature hermetic dielectric diffusion barriersINTEL CORP·Filed 2019·Granted Sep 1, 2020·0 cites·20 claims
- 2772US8399317B2Transistor having an etch stop layer including a metal compound that is selectively formed over a metal gate, and method thereforOTT ANDREW·Filed 2011·Granted Mar 19, 2013·3 cites·12 claims
- 2871US10529619B2Conformal low temperature hermetic dielectric diffusion barriersINTEL CORP·Filed 2019·Granted Jan 7, 2020·0 cites·25 claims
- 2968US10438844B2Conformal low temperature hermetic dielectric diffusion barriersINTEL CORP·Filed 2018·Granted Oct 8, 2019·0 cites·20 claims
- 3059US2025309100A1Low resistivity conductor subtractively patterned interconnects using layer transfer of microstructure engineered thin filmsINTEL CORP·Filed 2024·Application pending·0 cites
- 3155US2016307796A1Self-forming, self-aligned barriers for back-end interconnects and methods of making sameINTEL CORP·Filed 2016·Application pending·0 cites
- 3253US7172960B2Multi-layer film stack for extinction of substrate reflections during patterningINTEL CORP·Filed 2000·Granted Feb 6, 2007·4 cites·12 claims
- 3349US7291552B2Multi-layer film stack for extinction of substrate reflections during patterningINTEL CORP·Filed 2005·Granted Nov 6, 2007·0 cites·20 claims
- 3447US8674484B2Dielectric separator layerKING SEAN·Filed 2008·Granted Mar 18, 2014·0 cites·5 claims
- 3547US2013260553A1Self-forming, self-aligned barriers for back-end interconnects and methods of making sameYOO HUI JAE·Filed 2013·Application pending·0 cites
- 3646US7199473B2Integrated low-k hard maskINTEL CORP·Filed 2005·Granted Apr 3, 2007·0 cites·14 claims
- 3746US2006086954A1Multi-layer film stack for extinction of substrate reflections during patterningNATARAJAN SANJAY S·Filed 2005·Application pending·0 cites
- 3844US8524597B2Methods for forming planarized hermetic barrier layers and structures formed therebyKING SEAN W·Filed 2011·Granted Sep 3, 2013·0 cites·10 claims
- 3935US2004235390A1Reclaiming virgin test wafersFiled 2004·Application pending·0 cites
- 4034US2007059913A1Capping layer to reduce amine poisoning of photoresist layersKING SEAN W·Filed 2005·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Sean King files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →