Inventor · disambiguated record
Seong Yeol Mun
Also filed as: MUN SEONG YEOL
31 granted patents·5 pending applications·76 citations·filing 1997–2023
94Inventor score
Files withOMNIVISION TECH INC28GLOBALFOUNDRIES INC6HYUNDAI ELECTRONICS IND1MAGNACHIP SEMICONDUCTOR LTD1
Top patents by PatentIndex Score
36 records- 0198US11189655B1Isolation structure for suppressing floating diffusion junction leakage in CMOS image sensorOMNIVISION TECH INC·Filed 2020·Granted Nov 30, 2021·12 cites·20 claims
- 0298US10811453B1Pillar structures for suppressing optical cross-talkOMNIVISION TECH INC·Filed 2019·Granted Oct 20, 2020·36 cites·18 claims
- 0396US11444108B2Isolation structure for suppression floating diffusion junction leakage in CMOS image sensorOMNIVISION TECH INC·Filed 2020·Granted Sep 13, 2022·5 cites·23 claims
- 0495US11647300B2Method for forming LED flickering reduction (LFR) film for HDR image sensor and image sensor having sameOMNIVISION TECH INC·Filed 2020·Granted May 9, 2023·3 cites·22 claims
- 0592US11695030B2Reduced cross-talk pixel-array substrate and fabrication methodOMNIVISION TECH INC·Filed 2020·Granted Jul 4, 2023·2 cites·20 claims
- 0689US11626433B2Transistors having increased effective channel widthOMNIVISION TECH INC·Filed 2020·Granted Apr 11, 2023·2 cites·21 claims
- 0787US12262562B2Image sensor with varying depth deep trench isolation structure for reduced crosstalkOMNIVISION TECH INC·Filed 2021·Granted Mar 25, 2025·1 cites·16 claims
- 0887US11984464B2CMOS image sensor having front side and back side trench isolation structures enclosing pixel regions and a capacitor for storing the image chargeOMNIVISION TECH INC·Filed 2020·Granted May 14, 2024·2 cites·19 claims
- 0987US11616088B2Transistors having increased effective channel widthOMNIVISION TECH INC·Filed 2020·Granted Mar 28, 2023·2 cites·18 claims
- 1086US11348957B2Transistor having increased effective channel widthOMNIVISION TECH INC·Filed 2019·Granted May 31, 2022·3 cites·14 claims
- 1185US11557620B2Metal grid structure integrated with deep trench isolation structureOMNIVISION TECH INC·Filed 2021·Granted Jan 17, 2023·1 cites·31 claims
- 1276US11527569B2High dynamic range split pixel CMOS image sensor with low color crosstalkOMNIVISION TECH INC·Filed 2020·Granted Dec 13, 2022·1 cites·38 claims
- 1376US9570586B2Fabrication methods facilitating integration of different device architecturesGLOBALFOUNDRIES INC·Filed 2013·Granted Feb 14, 2017·4 cites·19 claims
- 1475US2024105755A1SiGe Photodiode For Crosstalk ReductionOMNIVISION TECH INC·Filed 2023·Application pending·0 cites
- 1574US10510662B2Vertically oriented metal silicide containing e-fuse device and methods of making sameGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 17, 2019·1 cites·18 claims
- 1667US10297672B2Triple gate technology for 14 nanometer and onwardsGLOBALFOUNDRIES INC·Filed 2017·Granted May 21, 2019·1 cites·13 claims
- 1766US11901383B2Transistor having increased effective channel widthOMNIVISION TECH INC·Filed 2022·Granted Feb 13, 2024·0 cites·19 claims
- 1866US11876110B2SiGe photodiode for crosstalk reductionOMNIVISION TECH INC·Filed 2021·Granted Jan 16, 2024·0 cites·15 claims
- 1966US11705475B2Method of forming shallow trench isolation (STI) structure for suppressing dark currentOMNIVISION TECH INC·Filed 2021·Granted Jul 18, 2023·0 cites·17 claims
- 2065US11810928B2CMOS image sensor with LED flickering reduction and low color cross-talkOMNIVISION TECH INC·Filed 2021·Granted Nov 7, 2023·0 cites·20 claims
- 2163US11282890B2Shallow trench isolation (STI) structure for suppressing dark current and method of formingOMNIVISION TECH INC·Filed 2020·Granted Mar 22, 2022·0 cites·18 claims
- 2262US12087792B2Suppressed cross-talk pixel-array substrate and fabrication methodOMNIVISION TECH INC·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
- 2361US10879171B2Vertically oriented metal silicide containing e-fuse deviceGLOBALFOUNDRIES INC·Filed 2019·Granted Dec 29, 2020·0 cites·18 claims
- 2460US12107107B2Dark-current inhibiting image sensor and methodOMNIVISION TECH INC·Filed 2021·Granted Oct 1, 2024·0 cites·20 claims
- 2560US11264419B2Image sensor with fully depleted silicon on insulator substrateOMNIVISION TECH INC·Filed 2019·Granted Mar 1, 2022·0 cites·29 claims
- 2660US2025081656A1Image sensor with optical structure for flare reductionOMNIVISION TECH INC·Filed 2023·Application pending·0 cites
- 2755US11217613B2Image sensor with split pixel structure and method of manufacturing thereofOMNIVISION TECH INC·Filed 2019·Granted Jan 4, 2022·0 cites·26 claims
- 2853US11862509B2Shallow trench isolation (STI) structure for CMOS image sensorOMNIVISION TECH INC·Filed 2021·Granted Jan 2, 2024·0 cites·15 claims
- 2953US2023215890A1High Dynamic Range, Backside-illuminated, Low Crosstalk Image Sensor with Walls Between Silicon Surface and First Layer Metal to Isolate PhotodiodesOMNIVISION TECH INC·Filed 2022·Application pending·0 cites
- 3052US11289530B2Shallow trench isolation (STI) structure for CMOS image sensorOMNIVISION TECH INC·Filed 2020·Granted Mar 29, 2022·0 cites·19 claims
- 3148US11869906B2Image sensor with elevated floating diffusionOMNIVISION TECH INC·Filed 2020·Granted Jan 9, 2024·0 cites·20 claims
- 3247US11700464B2Selective nitrided gate-oxide for RTS noise and white-pixel reductionOMNIVISION TECH INC·Filed 2020·Granted Jul 11, 2023·0 cites·21 claims
- 3338US2020194418A1Inverter structure with different sized contactsGLOBALFOUNDRIES INC·Filed 2018·Application pending·0 cites
- 3437US2015318280A1Wide-bottom contact for non-planar semiconductor structure and method of making sameGLOBALFOUNDRIES INC·Filed 2014·Application pending·0 cites
- 3533US7604750B2Method for fabricating semiconductor deviceMAGNACHIP SEMICONDUCTOR LTD·Filed 2005·Granted Oct 20, 2009·0 cites·7 claims
- 3629US6159332ASystem for etching polysilicon in fabricating semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1997·Granted Dec 12, 2000·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →