Inventor · disambiguated record
Sebastian Naczas
Also filed as: NACZAS SEBASTIAN
15 granted patents·111 citations·filing 2011–2019
91Inventor score
Top patents by PatentIndex Score
15 records- 0198US10056289B1Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gapIBM·Filed 2017·Granted Aug 21, 2018·44 cites·14 claims
- 0296US8999779B2Locally raised epitaxy for improved contact by local silicon capping during trench silicide processingsIBM·Filed 2013·Granted Apr 7, 2015·23 cites·8 claims
- 0394US9305883B2Locally raised epitaxy for improved contact by local silicon capping during trench silicide processingsGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 5, 2016·10 cites·11 claims
- 0493US8896063B2FinFET devices containing merged epitaxial Fin-containing contact regionsIBM·Filed 2013·Granted Nov 25, 2014·15 cites·16 claims
- 0592US10381262B2Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gapIBM·Filed 2018·Granted Aug 13, 2019·6 cites·18 claims
- 0687US10950492B2Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gapIBM·Filed 2019·Granted Mar 16, 2021·3 cites·15 claims
- 0782US10811599B2Co-fabrication of magnetic device structures with electrical interconnects having reduced resistance through increased conductor grain sizeIBM·Filed 2019·Granted Oct 20, 2020·2 cites·20 claims
- 0882US10559491B2Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gapIBM·Filed 2018·Granted Feb 11, 2020·2 cites·20 claims
- 0980US10361364B2Co-fabrication of magnetic device structures with electrical interconnects having reduced resistance through increased conductor grain sizeIBM·Filed 2017·Granted Jul 23, 2019·2 cites·11 claims
- 1080US8900934B2FinFET devices containing merged epitaxial Fin-containing contact regionsIBM·Filed 2013·Granted Dec 2, 2014·4 cites·17 claims
- 1163US10756260B2Co-fabrication of magnetic device structures with electrical interconnects having reduced resistance through increased conductor grain sizeIBM·Filed 2019·Granted Aug 25, 2020·0 cites·20 claims
- 1251US9768262B2Embedded carbon-doped germanium as stressor for germanium nFET devicesIBM·Filed 2016·Granted Sep 19, 2017·0 cites·19 claims
- 1351US9419138B2Embedded carbon-doped germanium as stressor for germanium nFET devicesIBM·Filed 2014·Granted Aug 16, 2016·0 cites·11 claims
- 1447US10312132B2Forming sacrificial endpoint layer for deep STI recessIBM·Filed 2017·Granted Jun 4, 2019·0 cites·20 claims
- 1543US9231061B2Fabrication of surface textures by ion implantation for antireflection of silicon crystalsHUANG MENGBING·Filed 2011·Granted Jan 5, 2016·0 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →