Inventor · disambiguated record
Seiji Otake
Also filed as: OTAKE SEIJI
25 granted patents·9 pending applications·95 citations·filing 2005–2014
94Inventor score
Top patents by PatentIndex Score
34 records- 0186US7279768B2Semiconductor device for overvoltage protectionSANYO ELECTRIC CO·Filed 2006·Granted Oct 9, 2007·14 cites·4 claims
- 0284US7291883B2Semiconductor deviceSANYO ELECTRIC CO·Filed 2006·Granted Nov 6, 2007·13 cites·3 claims
- 0383US7906811B2Semiconductor device with protection element disposed around a formation region of a transistorSANYO ELECTRIC CO LTD OSAKA·Filed 2007·Granted Mar 15, 2011·15 cites·8 claims
- 0478US7288816B2Semiconductor deviceSANYO ELECTRIC CO·Filed 2006·Granted Oct 30, 2007·8 cites·6 claims
- 0577US7675141B2Semiconductor device and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2007·Granted Mar 9, 2010·7 cites·10 claims
- 0673US8314458B2Semiconductor device and method of manufacturing the sameOTAKE SEIJI·Filed 2010·Granted Nov 20, 2012·4 cites·6 claims
- 0771US7948031B2Semiconductor device and method of fabricating semiconductor deviceSANYO ELECTRIC CO·Filed 2008·Granted May 24, 2011·5 cites·14 claims
- 0869US7629214B2Method of making a transistor with a sloped drain diffusion layerSANYO ELECTRIC CO·Filed 2006·Granted Dec 8, 2009·4 cites·6 claims
- 0968US7439578B2Semiconductor deviceSANYO ELECTRIC CO·Filed 2006·Granted Oct 21, 2008·4 cites·16 claims
- 1067US7279745B2Semiconductor deviceSANYO ELECTRIC CO·Filed 2006·Granted Oct 9, 2007·3 cites·4 claims
- 1166US8022475B2Semiconductor device optimized to increase withstand voltage and reduce on resistanceSANYO SEMICONDUCTOR CO LTD·Filed 2009·Granted Sep 20, 2011·3 cites·9 claims
- 1265US7485922B2Isolation structure for semiconductor device including double diffusion isolation region forming PN junction with neighboring wells and isolation region beneathSANYO ELECTRIC CO·Filed 2006·Granted Feb 3, 2009·3 cites·3 claims
- 1364US9548292B2Circuit including a resistive element, a diode, and a switch and a method of using the sameSEMICONDUCTOR COMPONENTS IND LLC·Filed 2014·Granted Jan 17, 2017·1 cites·17 claims
- 1464US8916931B2LDMOS semiconductor device with parasitic bipolar transistor for reduced surge currentTAKEDA YASUHIRO·Filed 2011·Granted Dec 23, 2014·2 cites·20 claims
- 1562US7768067B2DMOS transistorSANYO ELECTRIC CO·Filed 2009·Granted Aug 3, 2010·2 cites·12 claims
- 1661US8754479B2Semiconductor deviceOTAKE SEIJI·Filed 2012·Granted Jun 17, 2014·2 cites·8 claims
- 1761US8482320B2Current detection circuit and semiconductor integrated circuitOTAKE SEIJI·Filed 2011·Granted Jul 9, 2013·1 cites·5 claims
- 1861US8395210B2DMOS transistor and method of manufacturing the sameTAKEDA YASUHIRO·Filed 2008·Granted Mar 12, 2013·1 cites·8 claims
- 1961US7579651B2Semiconductor deviceSANYO ELECTRIC CO·Filed 2006·Granted Aug 25, 2009·2 cites·7 claims
- 2058US8018001B2Semiconductor deviceSEMICONDUCTOR COMPONENTS IND·Filed 2009·Granted Sep 13, 2011·1 cites·4 claims
- 2146US8110463B2Method of fabricating semiconductor deviceSHIMADA SATORU·Filed 2009·Granted Feb 7, 2012·0 cites·13 claims
- 2243US7391069B2Semiconductor device and manufacturing method thereofSANYO ELECTRIC CO·Filed 2006·Granted Jun 24, 2008·0 cites·3 claims
- 2343US2007272942A1Semiconductor device and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2007·Application pending·0 cites
- 2443US2013075866A1Semiconductor deviceOTAKE SEIJI·Filed 2012·Application pending·0 cites
- 2541US2007145529A1Semiconductor device and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2006·Application pending·0 cites
- 2641US2007148892A1Semiconductor device and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2006·Application pending·0 cites
- 2740US2007171589A1Zapping CircuitSANYO ELECTRIC CO·Filed 2007·Application pending·0 cites
- 2840US2006076612A1Semiconductor device and manufacturing method of the sameOTAKE SEIJI·Filed 2005·Application pending·0 cites
- 2939US2008013233A1Electrostatic breakdown protection circuitSANYO ELECTRIC CO·Filed 2007·Application pending·0 cites
- 3039US2007096261A1Semiconductor device and manufacturing method thereofOTAKE SEIJI·Filed 2006·Application pending·0 cites
- 3137US2012299114A1Semiconductor device and method of manufacturing the sameOTAKE SEIJI·Filed 2012·Application pending·0 cites
- 3236US8618584B2Semiconductor deviceOTAKE SEIJI·Filed 2012·Granted Dec 31, 2013·0 cites·6 claims
- 3336US8237241B2Semiconductor deviceOTAKE SEIJI·Filed 2010·Granted Aug 7, 2012·0 cites·8 claims
- 3435US7799430B2Carbon commutator and process for producing the sameMITSUBA CORP·Filed 2007·Granted Sep 21, 2010·0 cites·8 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →