Inventor · disambiguated record
See-Hun Yang
Also filed as: YANG SEE-HUN
9 granted patents·10 pending applications·48 citations·filing 2012–2024
82Inventor score
Files withIBM10SAMSUNG ELECTRONICS CO LTD5MAX PLANCK GESELLSCHAFT ZUR FOERDERUNG DER WSS EV2PARKIN STUART STEPHEN PAPWORTH2
Top patents by PatentIndex Score
19 records- 0194US8687415B2Domain wall motion in perpendicularly magnetized wires having artificial antiferromagnetically coupled multilayers with engineered interfacesPARKIN STUART STEPHEN PAPWORTH·Filed 2012·Granted Apr 1, 2014·37 cites·44 claims
- 0285US9853205B1Spin transfer torque magnetic tunnel junction with off-centered current flowIBM·Filed 2016·Granted Dec 26, 2017·6 cites·17 claims
- 0370US11177432B2Heusler-alloy and ferrimagnet based magnetic domain-wall devices for artificial neural network applicationsIBM·Filed 2018·Granted Nov 16, 2021·2 cites·12 claims
- 0469US12094508B1Magnetic tunneling junction switching with parallel spin-momentum locked spin currentSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 17, 2024·0 cites·17 claims
- 0564US2025204269A1Neuromorphic devices of heusler alloy based spin-transfer-torque magnetic tunnel junctionsIBM·Filed 2023·Application pending·0 cites
- 0662US10109786B2Spin transfer torque magnetic tunnel junction with off-centered current flowIBM·Filed 2017·Granted Oct 23, 2018·1 cites·8 claims
- 0762US2024349619A1Nitride seed layer with high thermal stability for growth of perpendicularly magnetized heusler filmsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 0858US12457908B2Magnetic memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 28, 2025·0 cites·20 claims
- 0956US12512139B2Method for switching magnetic moments in magnetic material using seeded spin-orbit torqueMAX PLANCK GESELLSCHAFT ZUR FOERDERUNG DER WSS EV·Filed 2022·Granted Dec 30, 2025·0 cites·18 claims
- 1056US8638601B1Domain wall motion in perpendicularly magnetized wires having magnetic multilayers with engineered interfacesPARKIN STUART STEPHEN PAPWORTH·Filed 2012·Granted Jan 28, 2014·2 cites·28 claims
- 1156US2025057050A1Interfacial nitridation for growth of perpendicularly magnetized heusler filmsIBM·Filed 2023·Application pending·0 cites
- 1255US2025338779A1Lattice-matched oxide layer as tunnel barrier for perpendicularly magnetized heusler compoundsIBM·Filed 2024·Application pending·0 cites
- 1355US2025201290A1Heusler alloy based spin-transfer-torque magnetic tunnel junctions for flash memory and the likeIBM·Filed 2023·Application pending·0 cites
- 1454US2025261567A1Material stack with improved device performance in perpendicularly magnetized heusler filmsIBM·Filed 2024·Application pending·0 cites
- 1553US2025151628A1Mn-Sb COMPOUNDS FOR MAGNETIC RANDOM ACCESS MEMORY FREE LAYERSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1651US2024306517A1Templating layers for spin orbit torque assisted switching of perpendicularly magnetized heusler filmsIBM·Filed 2023·Application pending·0 cites
- 1748US12274179B2Seed layer for enhancing tunnel magnetoresistance with perpendicularly magnetized Heusler filmsIBM·Filed 2022·Granted Apr 8, 2025·0 cites·25 claims
- 1845US2023165158A1Magnetic memory devices and methods for initializing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 1942US2024407177A11-bit 3-terminal racetrack array with integated magnetic tunnel junction (mtj)MAX PLANCK GESELLSCHAFT ZUR FOERDERUNG DER WSS EV·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →