Inventor · disambiguated record
Seung-Beom Yoon
Also filed as: YOON SEUNG-BEOM
48 granted patents·10 pending applications·542 citations·filing 2004–2023
98Inventor score
Top patents by PatentIndex Score
58 records- 0198US7285820B2Flash memory device using semiconductor fin and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 23, 2007·263 cites·24 claims
- 0290US11656292B2Apparatus and method for detecting abnormality in batteryHYUNDAI MOTOR CO LTD·Filed 2021·Granted May 23, 2023·3 cites·14 claims
- 0390US7323740B2Single chip data processing device with embedded nonvolatile memory and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 29, 2008·58 cites·37 claims
- 0489US12206076B2Apparatus for evaluating insulation of secondary batteryHYUNDAI MOTOR CO LTD·Filed 2022·Granted Jan 21, 2025·1 cites·15 claims
- 0587US7271061B2Method of fabricating non-volatile memorySAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 18, 2007·14 cites·35 claims
- 0686US7492002B2Non-volatile memory device with a select gate electrode and a control gate electrode formed on a floating gateSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 17, 2009·10 cites·13 claims
- 0783US7514739B2Nonvolatile semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 7, 2009·11 cites·8 claims
- 0882US7315057B2Split gate non-volatile memory devices and methods of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 1, 2008·10 cites·17 claims
- 0982US7256444B2Local SONOS-type nonvolatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 14, 2007·8 cites·7 claims
- 1082US7176085B2Method of manufacturing split gate type nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 13, 2007·7 cites·7 claims
- 1181US7768061B2Self aligned 1 bit local SONOS memory cellSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 3, 2010·6 cites·21 claims
- 1280US7936003B2Semiconductor device having transistor with vertical gate electrode and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 3, 2011·7 cites·18 claims
- 1378US7078295B2Self-aligned split-gate nonvolatile memory structure and a method of making the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 18, 2006·20 cites·26 claims
- 1475US7602008B2Split gate non-volatile memory devices and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 13, 2009·6 cites·10 claims
- 1573US7411243B2Nonvolatile semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 12, 2008·5 cites·43 claims
- 1670US8059473B2Non-volatile memory deviceJEON HEE-SEOG·Filed 2010·Granted Nov 15, 2011·3 cites·9 claims
- 1770US7422949B2High voltage transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 9, 2008·3 cites·10 claims
- 1867US7598139B2Single chip data processing device with embedded nonvolatile memory and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 6, 2009·3 cites·20 claims
- 1967US7190024B2Method of manufacturing a thin dielectric layer using a heat treatment and a semiconductor device formed using the methodSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 13, 2007·2 cites·20 claims
- 2067US7172938B2Method of manufacturing a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 6, 2007·10 cites·19 claims
- 2166US12347892B2Battery module having a cell-unit monitoring structure and monitoring system thereofHYUNDAI MOTOR CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·18 claims
- 2266US7791951B2Methods of operating non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 7, 2010·2 cites·13 claims
- 2366US7256448B2Split gate type nonvolatile semiconductor memory device, and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 14, 2007·3 cites·4 claims
- 2466US7148110B2Local-length nitride SONOS device having self-aligned ONO structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 12, 2006·3 cites·19 claims
- 2566US7037781B2Local SONOS-type nonvolatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 2, 2006·10 cites·14 claims
- 2665US7238572B2Method of manufacturing EEPROM cellSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 3, 2007·3 cites·17 claims
- 2765US7064378B2Local-length nitride SONOS device having self-aligned ONO structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 20, 2006·11 cites·27 claims
- 2865US7029974B2Split gate type nonvolatile semiconductor memory device, and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 18, 2006·3 cites·28 claims
- 2963US7588983B2EEPROM cell and EEPROM device with high integration and low source resistance and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 15, 2009·2 cites·13 claims
- 3062US8404542B2Semiconductor device having transistor with vertical gate electrode and method of fabricating the sameKANG SANG-WOO·Filed 2011·Granted Mar 26, 2013·2 cites·19 claims
- 3162US7432159B2Electrically erasable programmable read-only memory (EEPROM) device and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 7, 2008·2 cites·13 claims
- 3261US7351636B2Methods of forming split-gate non-volatile memory cells including raised oxide layers on field oxide regionsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 1, 2008·2 cites·13 claims
- 3361US7320913B2Methods of forming split-gate non-volatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 22, 2008·2 cites·7 claims
- 3461US2024383372A1Battery management method, vehicle employing the method, and batteryHYUNDAI MOTOR CO LTD·Filed 2023·Application pending·0 cites
- 3560US7037783B2Method of manufacturing split gate type nonvolatile memory device having self-aligned spacer type control gateSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 2, 2006·6 cites·11 claims
- 3658US7586146B2Non-volatile memory and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 8, 2009·1 cites·15 claims
- 3758US7492000B2Self-aligned split-gate nonvolatile memory structure and a method of making the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 17, 2009·1 cites·12 claims
- 3858US7345336B2Semiconductor memory device having self-aligned charge trapping layerSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 18, 2008·7 cites·17 claims
- 3958US7141473B2Self-aligned 1 bit local SONOS memory cell and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 28, 2006·5 cites·14 claims
- 4057US7199421B2Sonos device and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 3, 2007·7 cites·17 claims
- 4156US7221028B2High voltage transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 22, 2007·5 cites·10 claims
- 4255US12095298B2Apparatus for management of a battery, vehicle system having the same and method thereofHYUNDAI MOTOR CO LTD·Filed 2021·Granted Sep 17, 2024·0 cites·17 claims
- 4355US7352026B2EEPROM cell and EEPROM device with high integration and low source resistance and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 1, 2008·5 cites·15 claims
- 4454US7160777B2Split-gate nonvolatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 9, 2007·6 cites·10 claims
- 4553US2009011589A1Method of manufacturing split gate type nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4652US7192833B2Flash memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 20, 2007·4 cites·20 claims
- 4751US7589376B2Electrically erasable programmable read-only memory (EEPROM) device and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 15, 2009·0 cites·7 claims
- 4850US2008318406A1Split gate type nonvolatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 4948US7429766B2Split gate type nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 30, 2008·0 cites·12 claims
- 5047US2007111451A1Flash memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
Showing the top 50 of 58 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →