Inventor · disambiguated record
Shijie Bai
Also filed as: BAI SHIJIE
16 granted patents·7 pending applications·0 citations·filing 2020–2025
83Inventor score
Top patents by PatentIndex Score
23 records- 0166US2025380400A1Fabrication method for semiconductor structure and semiconductor structureCXMT CORP·Filed 2025·Application pending·0 cites
- 0261US12402295B2Method for fabricating semiconductor device and semiconductor deviceCHANGXIN MEMORY TECH INC·Filed 2022·Granted Aug 26, 2025·0 cites·11 claims
- 0359US12495536B2Semiconductor structure and method for forming sameCHANGXIN MEMORY TECH INC·Filed 2022·Granted Dec 9, 2025·0 cites·12 claims
- 0458US12432940B2Semiconductor structure and method for manufacturing sameCHANGXIN MEMORY TECH INC·Filed 2022·Granted Sep 30, 2025·0 cites·13 claims
- 0556US12363882B2Method of manufacturing semiconductor structure and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jul 15, 2025·0 cites·7 claims
- 0656US12278106B2Preparation method of semiconductor deviceCHANGXIN MEMORY TECH INC·Filed 2021·Granted Apr 15, 2025·0 cites·19 claims
- 0756US11984352B2Formation method of semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2021·Granted May 14, 2024·0 cites·12 claims
- 0855US12150294B2Method for manufacturing semiconductor structure and sameCHANGXIN MEMORY TECH INC·Filed 2021·Granted Nov 19, 2024·0 cites·18 claims
- 0953US12341010B2Preparation method for semiconductor structure and sameCHANGXIN MEMORY TECH INC·Filed 2022·Granted Jun 24, 2025·0 cites·17 claims
- 1053US12213305B2Manufacturing method of semiconductor structure with epitaxial layer forming extension portionCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jan 28, 2025·0 cites·14 claims
- 1153US11869929B2Laminated capacitor and method for manufacturing the sameCHANGXIN MEMORY TECH INC·Filed 2021·Granted Jan 9, 2024·0 cites·20 claims
- 1252US12218220B2Manufacturing method of semiconductor structure and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Granted Feb 4, 2025·0 cites·17 claims
- 1352US12185519B2Memory device capacitor contact structure and method for preparing sameCHANGXIN MEMORY TECH INC·Filed 2021·Granted Dec 31, 2024·0 cites·16 claims
- 1452US2023164983A1Method for preparing semiconductor structure, semiconductor structure and semiconductor memoryCHANGXIN MEMORY TECH INC·Filed 2022·Application pending·0 cites
- 1551US12317503B2Memory device, and manufacturing method and driving method thereofCHANGXIN MEMORY TECH INC·Filed 2022·Granted May 27, 2025·0 cites·13 claims
- 1651US12165879B2Method for manufacturing semiconductor structure and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2021·Granted Dec 10, 2024·0 cites·13 claims
- 1751US2023386892A1Semiconductor structure and method for forming semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2023·Application pending·0 cites
- 1851US2023187482A1Method of manufacturing semiconductor structure and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2022·Application pending·0 cites
- 1949US12108594B2Semiconductor device manufacturing method comprising first conductive layer with increased roughness in array regionCHANGXIN MEMORY TECH INC·Filed 2021·Granted Oct 1, 2024·0 cites·8 claims
- 2049US2022148879A1Method for treating photoresist and self-aligned double patterning methodCHANGXIN MEMORY TECH INC·Filed 2021·Application pending·0 cites
- 2148US2022216214A1Semiconductor structure manufacturing method and semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2021·Application pending·0 cites
- 2247US12068160B2Method for manufacturing semiconductor structureCHANGXIN MEMORY TECH INC·Filed 2021·Granted Aug 20, 2024·0 cites·19 claims
- 2330US2021319807A1Rotary cage type optical disk library storage system capable of replacing optical disksBEIJING ZHONGKE KAIDI SOFTWARE CO LTD·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →