Inventor · disambiguated record
Shihsheng Chang
Also filed as: CHANG SHIHSHENG
11 granted patents·11 pending applications·5 citations·filing 2019–2024
79Inventor score
Files withTOKYO ELECTRON LTD22
Top patents by PatentIndex Score
22 records- 0195US11195723B1Non-atomic layer deposition (ALD) method of forming sidewall passivation layer during high aspect ratio carbon layer etchTOKYO ELECTRON LTD·Filed 2020·Granted Dec 7, 2021·5 cites·20 claims
- 0268US11651967B2Non-atomic layer deposition (ALD) method of forming sidewall passivation layer during high aspect ratio carbon layer etchTOKYO ELECTRON LTD·Filed 2021·Granted May 16, 2023·0 cites·20 claims
- 0359US12341009B2Variable hardness amorphous carbon maskTOKYO ELECTRON LTD·Filed 2022·Granted Jun 24, 2025·0 cites·20 claims
- 0457US12040176B2Technologies for high aspect ratio carbon etching with inserted charge dissipation layerTOKYO ELECTRON LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 0556US2025259891A1Protection structure for liner removalTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 0655US12237216B2Method for filling recessed features in semiconductor devices with a low-resistivity metalTOKYO ELECTRON LTD·Filed 2022·Granted Feb 25, 2025·0 cites·21 claims
- 0755US11538692B2Cyclic plasma etching of carbon-containing materialsTOKYO ELECTRON LTD·Filed 2021·Granted Dec 27, 2022·0 cites·20 claims
- 0854US2024420965A1Method of deposition in high aspect ratio (har) featuresTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 0954US2025232981A1High aspect ratio carbon layer etch with improved throughput and process windowTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 1053US12009211B2Method for highly anisotropic etching of titanium oxide spacer using selective top-depositionTOKYO ELECTRON LTD·Filed 2021·Granted Jun 11, 2024·0 cites·20 claims
- 1153US2024371655A1Protection Layer Formation during Plasma Etching Conductive MaterialsTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 1253US2025062124A1Methods and structures for improving etch profile of underlying layersTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 1352US2024087891A1Method for Processing a SubstrateTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 1451US11227774B2Methods and systems for etching silicon cyanide (SiCN) with multi-color selectivityTOKYO ELECTRON LTD·Filed 2020·Granted Jan 18, 2022·0 cites·18 claims
- 1551US2024258108A1Selective Deposition of Passivating Layer During Spacer EtchingTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 1650US10937659B2Method of anisotropically etching adjacent lines with multi-color selectivityTOKYO ELECTRON LTD·Filed 2019·Granted Mar 2, 2021·0 cites·24 claims
- 1750US2023343598A1Method For Improving Etch Rate And Critical Dimension Uniformity When Etching High Aspect Ratio Features Within A Hard Mask LayerTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 1849US2022199410A1Conformal amorphous carbon layer etch with side-wall passivationTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
- 1948US12266534B2Forming a semiconductor device using a protective layerTOKYO ELECTRON LTD·Filed 2021·Granted Apr 1, 2025·0 cites·20 claims
- 2047US11756790B2Method for patterning a dielectric layerTOKYO ELECTRON LTD·Filed 2021·Granted Sep 12, 2023·0 cites·6 claims
- 2145US2023343554A1Methods To Provide Anisotropic Etching Of Metal Hard Masks Using A Radio Frequency Modulated Pulsed Plasma SchemeTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 2245US2022246747A1Contact Etch Stop Layer with Improved Etch Stop CapabilityTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →