Inventor · disambiguated record
Sheng-Yueh Chang
Also filed as: CHANG SHENG · CHANG SHENG-YUEH
6 granted patents·6 pending applications·47 citations·filing 1998–2010
81Inventor score
Files withIND TECH RES INST4CHANG SHENG-YUEH2CHANG SHENG1IND TECHNOLOGY RES INST EVERLI1UNITED MICROELECTRONICS CORP1
Top patents by PatentIndex Score
12 records- 0173US6303725B1Cyclic dione polymerIND TECH RES INST·Filed 2000·Granted Oct 16, 2001·11 cites·14 claims
- 0267US6417096B1Method for avoiding photo residue in dual damascene with acid treatmentUNITED MICROELECTRONICS CORP·Filed 2000·Granted Jul 9, 2002·12 cites·20 claims
- 0359US6207779B1Ring-opened polymerIND TECH RES INST·Filed 1998·Granted Mar 27, 2001·17 cites·44 claims
- 0454US6573024B2Ammonium salt of organic acid and resist composition containing the sameIND TECH RES INST·Filed 2001·Granted Jun 3, 2003·2 cites·18 claims
- 0552US6538086B1Polymer with a pericyclic protective group and resist composition containing the sameIND TECH RES INST·Filed 2000·Granted Mar 25, 2003·2 cites·2 claims
- 0639US2013056412A1Mixed liquor filterability treatment in a membrane bioreactorCHANG SHENG·Filed 2010·Application pending·0 cites
- 0738US2007072090A1Reticle having a protection layerCHANG SHENG-YUEH·Filed 2005·Application pending·0 cites
- 0838US2006127820A1Method for forming photoresist pattern and method for triming photoresist patternWU CALVIN·Filed 2005·Application pending·0 cites
- 0937US2006257749A1Method for reducing critical dimensionCHANG SHENG-YUEH·Filed 2005·Application pending·0 cites
- 1033US2004180295A1Method for fabricating a dual damascene structure using a single photoresist layerFiled 2003·Application pending·0 cites
- 1133US2007048669A1Method of forming the photo resist featureWU TE-HUNG·Filed 2005·Application pending·0 cites
- 1227US6197476B1Photosensitive composition containing a cyclic dione polymerIND TECHNOLOGY RES INST EVERLI·Filed 1998·Granted Mar 6, 2001·3 cites·3 claims
Join the waitlist — get patent alerts
Get an alert when Sheng-Yueh Chang files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →