Inventor · disambiguated record
Shih-Shiung Chen
Also filed as: CHEN SHIH-SHIUNG · HWANG YUAN-KO
34 granted patents·5 pending applications·368 citations·filing 1995–2025
97Inventor score
Top patents by PatentIndex Score
39 records- 0194US11177302B2CMOS image sensor structure with microstructures formed on semiconductor layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 16, 2021·3 cites·20 claims
- 0294US10157946B2Method for forming CMOS image sensor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·7 cites·20 claims
- 0391US11996429B2CMOS image sensor structure with microstructures on backside surface of semiconductor layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 28, 2024·1 cites·20 claims
- 0491US10510910B2Image sensor with an absorption enhancement semiconductor layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·6 cites·20 claims
- 0590US10211244B2Image sensor device with reflective structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 19, 2019·5 cites·19 claims
- 0689US9761546B2Trap layer substrate stacking technique to improve performance for RF devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 12, 2017·5 cites·20 claims
- 0788US9818779B2CMOS image sensor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 14, 2017·4 cites·20 claims
- 0887US2024274632A1Cmos image sensor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0985US10861988B2Image sensor with an absorption enhancement semiconductor layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·1 cites·20 claims
- 1085US2025351607A1Deep trench isolation structures resistant to crackingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1184US10861989B2Image sensor with an absorption enhancement semiconductor layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·1 cites·20 claims
- 1281US9711521B2Substrate fabrication method to improve RF (radio frequency) device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 18, 2017·4 cites·20 claims
- 1381US5989754APhotomask arrangement protecting reticle patterns from electrostatic discharge damage (ESD)TAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Nov 23, 1999·48 cites·7 claims
- 1480US5705320ARecovery of alignment marks and laser marks after chemical-mechanical-polishingTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Jan 6, 1998·63 cites·12 claims
- 1580US2025329577A1Semiconductor structure with junction leakage reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1678US11990493B2Image sensor device with reflective structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·0 cites·20 claims
- 1776US5952132AMethod for forming a stepper focus pattern through determination of overlay errorTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Sep 14, 1999·39 cites·14 claims
- 1875US12453203B2Deep trench isolation structures resistant to crackingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 21, 2025·0 cites·20 claims
- 1974US11302734B2Deep trench isolation structures resistant to crackingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 12, 2022·1 cites·20 claims
- 2074US6021921ALiquid dispensing system and method for dispensingTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Feb 8, 2000·45 cites·25 claims
- 2171US11342372B2Image sensor device with reflective layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·0 cites·20 claims
- 2271US10734427B2Method for forming image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 4, 2020·0 cites·20 claims
- 2370US12368070B2LDMOS device having isolation regions comprising DTI regions extending from a bottom of STI regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 22, 2025·0 cites·20 claims
- 2464US11121100B2Trap layer substrate stacking technique to improve performance for RF devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·0 cites·20 claims
- 2564US7294279B2Method for releasing a micromechanical structureTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Nov 13, 2007·2 cites·11 claims
- 2664US7144673B2Effective photoresist stripping process for high dosage and high energy ion implantationTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Dec 5, 2006·8 cites·19 claims
- 2762US7204751B2Method and apparatus for filtering contaminantsTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Apr 17, 2007·11 cites·17 claims
- 2859US6752897B2Wet etch system with overflow particle removing featureTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jun 22, 2004·7 cites·20 claims
- 2958US11121098B2Trap layer substrate stacking technique to improve performance for RF devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 14, 2021·0 cites·20 claims
- 3058US6207546B1Prevent passivation from keyhole damage and resist extrusion by a crosslinking mechanismTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Mar 27, 2001·25 cites·16 claims
- 3156US5567660ASpin-on-glass planarization by a new stagnant coating methodTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted Oct 22, 1996·27 cites·22 claims
- 3254US6687456B1In-line fluid heaterTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Feb 3, 2004·5 cites·20 claims
- 3352US5999397AMethod for preventing electrostatic discharge damage to an insulating articleTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Dec 7, 1999·13 cites·12 claims
- 3452US5869219AMethod for depositing a polyimide filmTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Feb 9, 1999·17 cites·14 claims
- 3551US5798192AStructure of a mask for use in a lithography process of a semiconductor fabricationTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Aug 25, 1998·13 cites·8 claims
- 3647US2016372360A1Semiconductor structure with junction leakage reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Application pending·0 cites
- 3740US6617221B1Method of making capacitorsTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 9, 2003·1 cites·19 claims
- 3836US2004192064A1Method and apparatus for homogeneous mixingTAIWAN SEMICONDUCTOR MFG·Filed 2003·Application pending·0 cites
- 3934US6143644AMethod to prevent passivation from keyhole damage and resist extrusionTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Nov 7, 2000·6 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →