Structure of a mask for use in a lithography process of a semiconductor fabrication

Abstract

A structure of a mask for use in a lithography process in a semiconductor fabrication procedure is disclosed. The structure comprising: a mask base being made of transparent material; a plurality of patterns formed on said mask base, said patterns being used for generating an image on a wafer and being made of a conductive opaque material; and a conductive layer formed on said mask base and said plurality of patterns.

The embodiments of the invention in which an exclusive property or privilege is claimed are defined as follows: 
     
       1. A structure of a mask for use in a lithography process in a semiconductor fabrication procedure, said structure comprising: a mask base being made of transparent material selected from a group consisting of glass and quartz;   at least one pattern formed on said mask base, said at least one pattern being used for generating an image on a wafer and being made of a conductive opaque material; and   a silver layer formed on said mask base and said at least one pattern for moving electrons that are confined at the corners of said at least one pattern on a surface of said silver layer, thereby distributing said electrons uniformly on said mask.   
     
     
       2. The structure of claim 1, wherein said patterns comprise metal. 
     
     
       3. The structure of claim 2, wherein said patterns comprise chrome. 
     
     
       4. The structure of claim 1, wherein the thickness of said silver layer is about 10 to 50 angstroms. 
     
     
       5. The structure of claim 1, wherein the refractive index of said quartz is about 1.47. 
     
     
       6. The structure of claim 1, wherein the refractive index of said silver is n=0.075 and κ=1.93. 
     
     
       7. The structure of claim 6, wherein the thickness of said conductive layer is about 10 to 50 angstroms. 
     
     
       8. A method of forming a mask for use in developing a pattern on a photoresist, the method comprising the steps of: forming onto a mask base an opaque material so as to form said pattern; and   forming over said mask base and said opaque material a silver layer for moving electrons generated in an exposing procedure on a surface of said silver layer thereby distributing said electrons uniformly on said mask.