Inventor · disambiguated record
Shih-Cheng Chen
Also filed as: CHEN SHIH-CHENG
84 granted patents·58 pending applications·432 citations·filing 2015–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD126UNITED MICROELECTRONICS CORP10NOVATEK MICROELECTRONICS CORP6
Top patents by PatentIndex Score
142 records- 0198US11855096B2Uniform gate width for nanostructure devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·4 cites·20 claims
- 0298US11616062B2Gate isolation for multigate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 28, 2023·7 cites·20 claims
- 0398US11315925B2Uniform gate width for nanostructure devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 26, 2022·7 cites·20 claims
- 0498US11245036B1Latch-up preventionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 8, 2022·4 cites·20 claims
- 0597US12342616B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 24, 2025·2 cites·20 claims
- 0697US11996483B2FET with wrap-around silicide and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·2 cites·20 claims
- 0797US11967594B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 23, 2024·2 cites·20 claims
- 0897US11450663B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·3 cites·20 claims
- 0997US10204788B1Method of forming high dielectric constant dielectric layer by atomic layer depositionUNITED MICROELECTRONICS CORP·Filed 2018·Granted Feb 12, 2019·341 cites·15 claims
- 1096US12272690B2Gate isolation for multigate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·2 cites·20 claims
- 1195US11916122B2Gate all around transistor with dual inner spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 27, 2024·2 cites·20 claims
- 1295US11756888B2Semiconductor device having contact plug connected to gate structure on PMOS regionUNITED MICROELECTRONICS CORP·Filed 2021·Granted Sep 12, 2023·2 cites·5 claims
- 1395US11398550B2Semiconductor device with facet S/D feature and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 26, 2022·3 cites·20 claims
- 1495US11264502B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·3 cites·20 claims
- 1594US12074204B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 27, 2024·2 cites·20 claims
- 1694US12057401B2Semiconductor device having contact plug connected to gate structure on PMOS regionUNITED MICROELECTRONICS CORP·Filed 2023·Granted Aug 6, 2024·1 cites·1 claims
- 1794US11695076B2FET with wrap-around silicide and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 4, 2023·2 cites·20 claims
- 1893US10944009B2Methods of fabricating a FinFET device with wrap-around silicide source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·5 cites·20 claims
- 1991US11450754B2Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·2 cites·20 claims
- 2091US11171091B2Semiconductor device having contact plug connected to gate structure on PMOS regionUNITED MICROELECTRONICS CORP·Filed 2019·Granted Nov 9, 2021·4 cites·10 claims
- 2190US11791401B2Multi-gate device and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 17, 2023·2 cites·20 claims
- 2290US11507225B2Electronic device, fingerprint sensing control method and fingerprint scanning control methodNOVATEK MICROELECTRONICS CORP·Filed 2021·Granted Nov 22, 2022·2 cites·28 claims
- 2390US11309424B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·2 cites·20 claims
- 2490US9871136B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jan 16, 2018·7 cites·17 claims
- 2589US10847373B2Methods of forming silicide contact in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 24, 2020·3 cites·20 claims
- 2688US12439638B2FET with wrap-around silicide and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 7, 2025·0 cites·20 claims
- 2788US12342587B2Integrated circuit with nanostructure transistors and bottom dielectric insulatorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 24, 2025·1 cites·20 claims
- 2888US12317540B2Method for manufacturing semiconductor structure with isolation featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 27, 2025·1 cites·20 claims
- 2988US11710774B2Method for forming epitaxial source/drain features and semiconductor devices fabricated thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 25, 2023·1 cites·20 claims
- 3088US2025311419A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3187US12438092B2Semiconductor device having contact plug connected to gate structure on PMOS regionUNITED MICROELECTRONICS CORP·Filed 2024·Granted Oct 7, 2025·0 cites·1 claims
- 3287US11093080B2Electronic device and fingerprint sensing control method thereofNOVATEK MICROELECTRONICS CORP·Filed 2019·Granted Aug 17, 2021·6 cites·50 claims
- 3387US2025359145A1Semiconductor structure with isolation featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3487US2025359297A1Dielectric liner for field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3586US2025351580A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3685US11929287B2Dielectric liner for field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 12, 2024·1 cites·20 claims
- 3784US12218210B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Feb 4, 2025·0 cites·20 claims
- 3884US12009216B2Methods of forming silicide contact in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 11, 2024·0 cites·20 claims
- 3983US12457798B2Dielectric liner for field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 28, 2025·0 cites·20 claims
- 4083US2025316596A1Semiconductor devices with backside power rail and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4182US12300732B2Gate all around transistor with dual inner spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 4282US12272732B2Method for forming epitaxial source/drain features and semiconductor devices fabricated thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 4382US12009215B2Semiconductor device structure with silicide layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 11, 2024·0 cites·20 claims
- 4481US12446319B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 14, 2025·0 cites·20 claims
- 4581US12446305B2Uniform gate width for nanostructure devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 14, 2025·0 cites·20 claims
- 4681US11996482B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 28, 2024·0 cites·20 claims
- 4781US2025287629A1Semiconductor Devices and Methods of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4881US2025366031A1Method for forming semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4981US2025366139A1Spacer structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 5080US11764065B2Methods of forming silicide contact in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 19, 2023·0 cites·20 claims
Showing the top 50 of 142 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →