Inventor · disambiguated record
Shih-Hang Chiu
Also filed as: CHIU SHIH-HANG
27 granted patents·16 pending applications·23 citations·filing 2017–2025
93Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD43
Top patents by PatentIndex Score
43 records- 0194US12255104B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·1 cites·20 claims
- 0292US11594610B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 28, 2023·2 cites·20 claims
- 0390US11430652B2Controlling threshold voltages through blocking layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 30, 2022·5 cites·19 claims
- 0490US11289480B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·2 cites·20 claims
- 0589US10692770B2Geometry for threshold voltage tuning on semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 23, 2020·4 cites·20 claims
- 0685US12170280B2Method of manufacturing gate structure and method of manufacturing fin-field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
- 0784US11270994B2Gate structure, fin field-effect transistor, and method of manufacturing fin-field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 8, 2022·2 cites·20 claims
- 0883US11605720B2Metal gate capTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·1 cites·20 claims
- 0982US10847637B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 24, 2020·2 cites·20 claims
- 1082US10756087B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 25, 2020·2 cites·20 claims
- 1182US2025364245A1Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1281US2024088144A1Gate structure, fin field-effect transistor, and method of manufacturing fin-field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1380US2025359116A1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1479US2025349723A1Forming silicon-containing material over metal gate to reduce loading between long channel and short channel transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1578US11855083B2Gate structure, fin field-effect transistor, and method of manufacturing fin-field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·13 claims
- 1678US2024379810A1Gate structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1778US2025185344A1Semiconductor Device and Method of ManufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1877US12148810B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
- 1977US12040235B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 2077US2025366121A1Area-selective removal and selective metal capTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2177US2024222108A1Controlling threshold voltages through blocking layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2276US11961732B2Controlling threshold voltages through blocking layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·0 cites·20 claims
- 2376US11075275B2Metal gate fill for short-channel and long-channel semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 27, 2021·2 cites·20 claims
- 2476US2025311307A1Forming low-resistance capping layer over metal gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2576US2025366114A1Metal caps for gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2674US2025275185A1Metal gate for gate-all-around devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2774US2025338587A1Method of forming metal gate fin electrode structure by etching back metal fillTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2873US11728341B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 15, 2023·0 cites·20 claims
- 2973US2024379796A1Forming Low-Resistance Capping Layer Over Metal Gate ElectrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3072US12057486B2Metal gate capTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 6, 2024·0 cites·20 claims
- 3171US12310078B2Method of forming metal gate fin electrode structure by etching back metal fillTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 20, 2025·0 cites·19 claims
- 3271US11935957B2Geometry for threshold voltage tuning on semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 19, 2024·0 cites·19 claims
- 3370US11437280B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·0 cites·20 claims
- 3469US12336244B2Metal caps for gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 17, 2025·0 cites·20 claims
- 3569US12288811B2Metal gate for gate-all-around devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 29, 2025·0 cites·20 claims
- 3669US11094828B2Geometry for threshold voltage tuning on semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 17, 2021·0 cites·20 claims
- 3768US2023028460A1Forming Silicon-Containing Material Over Metal Gate To Reduce Loading Between Long Channel And Short Channel TransistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3866US2023223253A1Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3965US12414329B2Forming low-resistance capping layer over metal gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 9, 2025·0 cites·23 claims
- 4064US12094948B2Forming low-resistance capping layer over metal gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 17, 2024·0 cites·20 claims
- 4162US2023343857A1Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4257US12484275B2Gate structures for multi-gate devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 25, 2025·0 cites·20 claims
- 4357US10276690B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →