Inventor · disambiguated record
Shunsuke Fukami
Also filed as: FUKAMI SHUNSUKE
49 granted patents·2 pending applications·305 citations·filing 2006–2022
98Inventor score
Top patents by PatentIndex Score
51 records- 0192US7936627B2Magnetoresistance effect element and MRAMNEC CORP·Filed 2007·Granted May 3, 2011·29 cites·20 claims
- 0292US7929342B2Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memoryNEC CORP·Filed 2006·Granted Apr 19, 2011·29 cites·43 claims
- 0391US10020039B2Three terminal magnetoresistive devices, magnetoresistive random access memory and magnetic recording methodNEC CORP·Filed 2016·Granted Jul 10, 2018·10 cites·17 claims
- 0491US8023315B2Magnetoresistive effect element and magnetic random access memoryNEC CORP·Filed 2008·Granted Sep 20, 2011·20 cites·27 claims
- 0590US8040724B2Magnetic domain wall random access memoryNEC CORP·Filed 2008·Granted Oct 18, 2011·22 cites·15 claims
- 0689US8379429B2Domain wall motion element and magnetic random access memoryNEC CORP·Filed 2009·Granted Feb 19, 2013·20 cites·15 claims
- 0787US8503222B2Non-volatile logic circuitSUZUKI TETSUHIRO·Filed 2010·Granted Aug 6, 2013·11 cites·28 claims
- 0887US8120127B2Magnetic random access memory and method of manufacturing the sameNAGAHARA KIYOKAZU·Filed 2008·Granted Feb 21, 2012·19 cites·9 claims
- 0985US8154913B2Magnetoresistance effect element and magnetic random access memoryFUKAMI SHUNSUKE·Filed 2008·Granted Apr 10, 2012·11 cites·20 claims
- 1084US9379312B2Magnetoresistive effect element and magnetic random access memory using the sameSUGIBAYASHI TADAHIKO·Filed 2010·Granted Jun 28, 2016·7 cites·9 claims
- 1182US9941468B2Magnetoresistance effect element and magnetic memory deviceUNIV TOHOKU·Filed 2015·Granted Apr 10, 2018·9 cites·13 claims
- 1281US8559214B2Magnetic memory device and magnetic random access memoryFUKAMI SHUNSUKE·Filed 2009·Granted Oct 15, 2013·12 cites·23 claims
- 1380US8416611B2Magnetoresistance effect element and magnetic random access memoryFUKAMI SHUNSUKE·Filed 2008·Granted Apr 9, 2013·12 cites·38 claims
- 1480US8194436B2Magnetic random access memory, write method therefor, and magnetoresistance effect elementFUKAMI SHUNSUKE·Filed 2008·Granted Jun 5, 2012·8 cites·17 claims
- 1578US10164174B2Magnetoresistance effect element and magnetic memoryUNIV TOHOKU·Filed 2018·Granted Dec 25, 2018·1 cites·25 claims
- 1678US8174873B2Magnetic random access memory and initializing method for the sameSUZUKI TETSUHIRO·Filed 2008·Granted May 8, 2012·11 cites·13 claims
- 1776US8120950B2Semiconductor deviceFUKAMI SHUNSUKE·Filed 2009·Granted Feb 21, 2012·10 cites·14 claims
- 1874US9202545B2Magnetoresistance effect element and magnetic memoryUNIV TOHOKU·Filed 2013·Granted Dec 1, 2015·5 cites·12 claims
- 1973US8174086B2Magnetoresistive element, and magnetic random access memoryFUKAMI SHUNSUKE·Filed 2008·Granted May 8, 2012·8 cites·14 claims
- 2072US8687414B2Magnetic memory element and magnetic random access memoryNAGAHARA KIYOKAZU·Filed 2009·Granted Apr 1, 2014·8 cites·18 claims
- 2170US11690299B2Magnetoresistance effect element and magnetic memoryUNIV TOHOKU·Filed 2018·Granted Jun 27, 2023·1 cites·9 claims
- 2270US10998491B2Magnetoresistive element and magnetic memoryUNIV TOHOKU·Filed 2019·Granted May 4, 2021·1 cites·19 claims
- 2370US8791534B2Magnetic memory device and magnetic memoryFUKAMI SHUNSUKE·Filed 2011·Granted Jul 29, 2014·4 cites·14 claims
- 2470US8592930B2Magnetic memory element, magnetic memory and initializing methodFUKAMI SHUNSUKE·Filed 2010·Granted Nov 26, 2013·4 cites·20 claims
- 2566US8159872B2Magnetic random access memoryFUKAMI SHUNSUKE·Filed 2009·Granted Apr 17, 2012·8 cites·14 claims
- 2665US11563169B2Magnetic tunnel junction element and magnetic memoryUNIV TOHOKU·Filed 2016·Granted Jan 24, 2023·2 cites·11 claims
- 2765US10658572B2Magnetoresistance effect element and magnetic memoryUNIV TOHOKU·Filed 2018·Granted May 19, 2020·0 cites·14 claims
- 2865US8363461B2Magnetic random access memory, method of initializing magnetic random access memory and method of writing magnetic random access memoryNEC CORP·Filed 2009·Granted Jan 29, 2013·5 cites·20 claims
- 2963US8625327B2Magnetic random access memory and initializing method for the sameSUZUKI TETSUHIRO·Filed 2009·Granted Jan 7, 2014·3 cites·8 claims
- 3063US8514616B2Magnetic memory element and magnetic memoryISHIWATA NOBUYUKI·Filed 2010·Granted Aug 20, 2013·3 cites·18 claims
- 3162US8884388B2Magnetic memory element, magnetic memory and manufacturing method of magnetic memoryFUKAMI SHUNSUKE·Filed 2011·Granted Nov 11, 2014·1 cites·15 claims
- 3260US8149615B2Magnetic random access memoryFUKAMI SHUNSUKE·Filed 2009·Granted Apr 3, 2012·4 cites·10 claims
- 3357US9105831B2Nonvolatile magnetic element and nonvolatile magnetic deviceFUKAMI SHUNSUKE·Filed 2012·Granted Aug 11, 2015·2 cites·20 claims
- 3454US10706996B2Magnetic material and method of manufacturing the sameUNIV TOHOKU·Filed 2013·Granted Jul 7, 2020·0 cites·21 claims
- 3552US8994130B2Magnetic memory element and magnetic memoryFUKAMI SHUNSUKE·Filed 2010·Granted Mar 31, 2015·1 cites·16 claims
- 3652US7848137B2MRAM and data read/write method for MRAMNEC CORP·Filed 2007·Granted Dec 7, 2010·2 cites·24 claims
- 3751US2024371559A1Digital device, method for producing same, and method for using sameUNIV TOHOKU·Filed 2022·Application pending·0 cites
- 3850US10622550B2Magnetoresistance effect element including a recording layer with perpendicular anisotropy and a bias layer comprised of an antiferromagnetic material, magnetic memory device, manufacturing method, operation method, and integrated circuitUNIV TOHOKU·Filed 2017·Granted Apr 14, 2020·0 cites·23 claims
- 3950US9577182B2Magnetoresistance effect element and magnetic memoryUNIV TOHOKU·Filed 2014·Granted Feb 21, 2017·0 cites·10 claims
- 4050US2024145147A1Thin film inductor element and thin film variable inductor elementJAPAN ATOMIC ENERGY AGENCY·Filed 2022·Application pending·0 cites
- 4148US8787076B2Magnetic memory and method of manufacturing the sameFUKAMI SHUNSUKE·Filed 2009·Granted Jul 22, 2014·1 cites·11 claims
- 4247US8565011B2Method of initializing magnetic memory elementFUKAMI SHUNSUKE·Filed 2009·Granted Oct 22, 2013·1 cites·15 claims
- 4346US10410703B2Magnetoresistance effect element and magnetic memory deviceUNIV TOHOKU·Filed 2017·Granted Sep 10, 2019·0 cites·8 claims
- 4445US12405769B2Random number generation unit and computing systemUNIV TOHOKU·Filed 2020·Granted Sep 2, 2025·0 cites·8 claims
- 4543US11200933B2Magnetic multilayer film, magnetic memory element, magnetic memory and method for producing sameUNIV TOHOKU·Filed 2017·Granted Dec 14, 2021·0 cites·18 claims
- 4639US12159668B2Magneto-optical memory interfaceUNIV TOHOKU·Filed 2020·Granted Dec 3, 2024·0 cites·9 claims
- 4739US9083336B2Non-volatile logic operation deviceFUKAMI SHUNSUKE·Filed 2012·Granted Jul 14, 2015·0 cites·20 claims
- 4839US8537604B2Magnetoresistance element, MRAM, and initialization method for magnetoresistance elementSUZUKI TETSUHIRO·Filed 2009·Granted Sep 17, 2013·0 cites·19 claims
- 4937US10263180B2Magnetoresistance effect element and magnetic memoryUNIV TOHOKU·Filed 2017·Granted Apr 16, 2019·0 cites·15 claims
- 5035US9799822B2Magnetic memory element and magnetic memoryFUKAMI SHUNSUKE·Filed 2012·Granted Oct 24, 2017·0 cites·21 claims
Showing the top 50 of 51 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →