Inventor · disambiguated record
Sheng-Lin Hsieh
Also filed as: HSIEH SHENG-LIN
6 granted patents·5 citations·filing 2017–2024
72Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD6
Top patents by PatentIndex Score
6 records- 0195US12020933B2Trench etching process for photoresist line roughness improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 25, 2024·2 cites·20 claims
- 0292US11527406B2Trench etching process for photoresist line roughness improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·3 cites·12 claims
- 0386US12463035B2Trench etching process for photoresist line roughness improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
- 0454US11271111B2Source/drain structure with barrier in FinFET device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 8, 2022·0 cites·20 claims
- 0551US11145760B2Structure having improved fin critical dimension controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 12, 2021·0 cites·20 claims
- 0644US10153278B1Fin-type field effect transistor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 11, 2018·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →