Inventor · disambiguated record
Shou-Wei Hsieh
Also filed as: HSIEH SHOU-WEI
33 granted patents·8 pending applications·111 citations·filing 1998–2025
96Inventor score
Top patents by PatentIndex Score
41 records- 0197US11581422B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Feb 14, 2023·3 cites·1 claims
- 0297US11527638B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Dec 13, 2022·3 cites·9 claims
- 0397US10008578B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jun 26, 2018·17 cites·8 claims
- 0497US9953880B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Apr 24, 2018·20 cites·12 claims
- 0595US10943993B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2019·Granted Mar 9, 2021·7 cites·9 claims
- 0694US9972623B1Semiconductor device including barrier layer and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2016·Granted May 15, 2018·10 cites·3 claims
- 0789US10153210B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Dec 11, 2018·5 cites·12 claims
- 0889US10141228B1FinFET device having single diffusion break structureUNITED MICROELECTRONICS CORP·Filed 2018·Granted Nov 27, 2018·4 cites·6 claims
- 0989US9627268B2Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2015·Granted Apr 18, 2017·5 cites·5 claims
- 1089US2024413225A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 1189US2025015165A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 1287US12237329B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Granted Feb 25, 2025·0 cites·19 claims
- 1383US12100750B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Granted Sep 24, 2024·0 cites·6 claims
- 1482US12125900B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2022·Granted Oct 22, 2024·0 cites·7 claims
- 1581US10340272B2Manufacturing method of semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jul 2, 2019·2 cites·15 claims
- 1678US10483395B2Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2017·Granted Nov 19, 2019·2 cites·10 claims
- 1778US2025169169A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 1877US11876095B2Method for enlarging tip portion of a fin-shaped structureUNITED MICROELECTRONICS CORP·Filed 2021·Granted Jan 16, 2024·0 cites·20 claims
- 1972US10446448B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Oct 15, 2019·1 cites·5 claims
- 2069US11088137B2Method for enlarging tip portion of a fin-shaped structureUNITED MICROELECTRONICS CORP·Filed 2019·Granted Aug 10, 2021·0 cites·10 claims
- 2167US6518137B2Method for forming steep spacer in a MOS deviceUNITED MICROELECTRONICS CORP·Filed 2001·Granted Feb 11, 2003·11 cites·23 claims
- 2266US8981501B2Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2013·Granted Mar 17, 2015·2 cites·16 claims
- 2362US12100756B2High electron mobility transistor device having a barrier layer with a protruding portionUNITED MICROELECTRONICS CORP·Filed 2021·Granted Sep 24, 2024·0 cites·20 claims
- 2462US2025169208A1Nmos structure and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 2561US12249649B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2021·Granted Mar 11, 2025·0 cites·18 claims
- 2661US10566327B2Method for enlarging tip portion of a fin-shaped structureUNITED MICROELECTRONICS CORP·Filed 2017·Granted Feb 18, 2020·0 cites·4 claims
- 2759US12237350B2NMOS structure and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2021·Granted Feb 25, 2025·0 cites·6 claims
- 2859US10692780B2Method for protecting epitaxial layer by forming a buffer layer on NMOS regionUNITED MICROELECTRONICS CORP·Filed 2019·Granted Jun 23, 2020·0 cites·9 claims
- 2958US10211311B2Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Feb 19, 2019·0 cites·10 claims
- 3056US10256160B1Method for protecting epitaxial layer by forming a buffer layer on NMOS regionUNITED MICROELECTRONICS CORP·Filed 2017·Granted Apr 9, 2019·0 cites·7 claims
- 3155US2025063776A1Semiconductor device and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 3252US10991824B2Semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2019·Granted Apr 27, 2021·0 cites·6 claims
- 3351US2024162220A1Capacitor on fin structure and fabricating method of the sameUNITED MICROELECTRONICS CORP·Filed 2022·Application pending·0 cites
- 3450US2017178972A1Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2017·Application pending·0 cites
- 3546US7368782B2Dual-bit non-volatile memory cell and method of making the sameUNITED MICROELECTRONICS CORP·Filed 2006·Granted May 6, 2008·0 cites·3 claims
- 3646US7071063B2Dual-bit non-volatile memory cell and method of making the sameUNITED MICROELECTRONICS CORP·Filed 2004·Granted Jul 4, 2006·2 cites·9 claims
- 3745US10347761B2Tunneling field effect transistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jul 9, 2019·0 cites·20 claims
- 3844US10522660B2Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2017·Granted Dec 31, 2019·0 cites·9 claims
- 3942US6207501B1Method of fabricating a flash memoryUNITED MICROELECTRONICS CORP·Filed 1999·Granted Mar 27, 2001·9 cites·36 claims
- 4042US6010925AMethod of making dual-gate CMOSFETUTEK SEMICONDUCTOR CORP·Filed 1998·Granted Jan 4, 2000·8 cites·15 claims
- 4133US2017222026A1Method of fabricating fin field effect transistorUNITED MICROELECTRONICS CORP·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →