Inventor · disambiguated record
Shreyas Kher
Also filed as: KHER SHREYAS · KHER SHREYAS S · KHER SHREYAS SURESH
22 granted patents·13 pending applications·1,568 citations·filing 1994–2025
97Inventor score
Top patents by PatentIndex Score
35 records- 0198US6858547B2System and method for forming a gate dielectricAPPLIED MATERIALS INC·Filed 2002·Granted Feb 22, 2005·633 cites·31 claims
- 0296US8043907B2Atomic layer deposition processes for non-volatile memory devicesAPPLIED MATERIALS INC·Filed 2010·Granted Oct 25, 2011·42 cites·15 claims
- 0395US8343279B2Apparatuses for atomic layer depositionAPPLIED MATERIALS INC·Filed 2005·Granted Jan 1, 2013·26 cites·19 claims
- 0495US7794544B2Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD systemAPPLIED MATERIALS INC·Filed 2007·Granted Sep 14, 2010·49 cites·14 claims
- 0595US7547952B2Method for hafnium nitride depositionAPPLIED MATERIALS INC·Filed 2006·Granted Jun 16, 2009·37 cites·15 claims
- 0694US8282992B2Methods for atomic layer deposition of hafnium-containing high-K dielectric materialsMYO NYI OO·Filed 2007·Granted Oct 9, 2012·376 cites·18 claims
- 0794US7910446B2Integrated scheme for forming inter-poly dielectrics for non-volatile memory devicesAPPLIED MATERIALS INC·Filed 2008·Granted Mar 22, 2011·39 cites·16 claims
- 0894US7775508B2Ampoule for liquid draw and vapor draw with a continuous level sensorAPPLIED MATERIALS INC·Filed 2006·Granted Aug 17, 2010·28 cites·23 claims
- 0994US7601648B2Method for fabricating an integrated gate dielectric layer for field effect transistorsAPPLIED MATERIALS INC·Filed 2006·Granted Oct 13, 2009·89 cites·18 claims
- 1093US7659158B2Atomic layer deposition processes for non-volatile memory devicesAPPLIED MATERIALS INC·Filed 2008·Granted Feb 9, 2010·25 cites·14 claims
- 1193US7531468B2System and method for forming a gate dielectricAPPLIED MATERIALS INC·Filed 2007·Granted May 12, 2009·22 cites·24 claims
- 1292US7569501B2ALD metal oxide deposition process using direct oxidationAPPLIED MATERIALS INC·Filed 2006·Granted Aug 4, 2009·17 cites·20 claims
- 1391US7816200B2Hardware set for growth of high k and capping material filmsAPPLIED MATERIALS INC·Filed 2008·Granted Oct 19, 2010·21 cites·20 claims
- 1491US7067439B2ALD metal oxide deposition process using direct oxidationAPPLIED MATERIALS INC·Filed 2002·Granted Jun 27, 2006·48 cites·25 claims
- 1580US7304004B2System and method for forming a gate dielectricAPPLIED MATERIALS INC·Filed 2004·Granted Dec 4, 2007·19 cites·29 claims
- 1680US5474591AMethod of synthesizing III-V semiconductor nanocrystalsUNIV DUKE·Filed 1994·Granted Dec 12, 1995·62 cites·12 claims
- 1779US7871942B2Methods for manufacturing high dielectric constant filmAPPLIED MATERIALS INC·Filed 2008·Granted Jan 18, 2011·6 cites·18 claims
- 1875US8323754B2Stabilization of high-k dielectric materialsOLSEN CHRISTOPHER·Filed 2004·Granted Dec 4, 2012·23 cites·6 claims
- 1970US8071167B2Surface pre-treatment for enhancement of nucleation of high dielectric constant materialsKHER SHREYAS S·Filed 2010·Granted Dec 6, 2011·2 cites·20 claims
- 2069US7569500B2ALD metal oxide deposition process using direct oxidationAPPLIED MATERIALS INC·Filed 2006·Granted Aug 4, 2009·2 cites·20 claims
- 2163US8163343B2Method of forming an aluminum oxide layerKHER SHREYAS S·Filed 2008·Granted Apr 24, 2012·2 cites·23 claims
- 2260US12228905B2Eco-efficiency monitoring and exploration platform for semiconductor manufacturingAPPLIED MATERIALS INC·Filed 2021·Granted Feb 18, 2025·0 cites·20 claims
- 2357US2025189946A1Eco-efficiency monitoring and exploration platform for semiconductor manufacturingAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 2456US2005252449A1Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD systemNGUYEN SON T·Filed 2005·Application pending·0 cites
- 2550US2006153995A1Method for fabricating a dielectric stackAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 2649US2006264067A1Surface pre-treatment for enhancement of nucleation of high dielectric constant materialsKHER SHREYAS S·Filed 2006·Application pending·0 cites
- 2749US2008063798A1Precursors and hardware for cvd and aldKHER SHREYAS S·Filed 2007·Application pending·0 cites
- 2848US2006062917A1Vapor deposition of hafnium silicate materials with tris(dimethylamino)silaneMUTHUKRISHNAN SHANKAR·Filed 2005·Application pending·0 cites
- 2942US2008268154A1Methods for depositing a high-k dielectric material using chemical vapor deposition processKHER SHREYAS·Filed 2007·Application pending·0 cites
- 3041US2004198069A1Method for hafnium nitride depositionAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 3141US2003232501A1Surface pre-treatment for enhancement of nucleation of high dielectric constant materialsFiled 2002·Application pending·0 cites
- 3240US2007049043A1Nitrogen profile engineering in HI-K nitridation for device performance enhancement and reliability improvementAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 3340US2006019033A1Plasma treatment of hafnium-containing materialsAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 3435US2003012875A1CVD BST film composition and property control with thickness below 200 A for DRAM capacitor application with size at 0.1mum or belowFiled 2001·Application pending·0 cites
- 3534US2002197793A1Low thermal budget metal oxide deposition for capacitor structuresFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →