Inventor · disambiguated record
Shu-Yuan Ku
Also filed as: KU SHU-YUAN
86 granted patents·29 pending applications·149 citations·filing 2008–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD110KAO TA-WEI2TAIWAN SEMICONDUTOR MFG COMPANY LIMITED2YEH MATT1
Top patents by PatentIndex Score
115 records- 0197US11855085B2Semiconductor structure cutting process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
- 0297US11830926B2Semiconductor device structure with metal gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 28, 2023·3 cites·20 claims
- 0397US11721700B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·3 cites·20 claims
- 0497US11251284B2Dummy gate cutting process and resulting gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 15, 2022·4 cites·20 claims
- 0596US11996472B2Multi-layer dielectric refill for profile control in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 28, 2024·2 cites·20 claims
- 0696US10269787B2Metal gate structure cutting processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·13 cites·20 claims
- 0795US10468527B2Metal gate structure and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·10 cites·20 claims
- 0895US10134604B1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 20, 2018·10 cites·20 claims
- 0994US11855179B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·20 claims
- 1094US11527443B2Residue-free metal gate cutting for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·2 cites·20 claims
- 1194US11107902B2Dielectric spacer to prevent contacting shortingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 31, 2021·8 cites·20 claims
- 1294US10872897B2Cutting metal gates in fin field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 22, 2020·3 cites·16 claims
- 1394US10535654B2Cut metal gate with slanted sidewallsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·11 cites·20 claims
- 1493US11600718B2Multi-layer dielectric refill for profile control in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·2 cites·20 claims
- 1591US10510894B2Isolation structure having different distances to adjacent FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·5 cites·20 claims
- 1691US8415254B2Method for removing dummy poly in a gate last processYEH MATT·Filed 2008·Granted Apr 9, 2013·19 cites·20 claims
- 1790US11289480B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·2 cites·20 claims
- 1890US2025126883A1Semiconductor Structure Cutting Process and Structures Formed TherebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1989US10867998B1Semiconductor structure cutting process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·3 cites·20 claims
- 2088US11437287B2Transistor gates and methods of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·2 cites·18 claims
- 2188US11145536B2Gate dielectric preserving gate cut processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 12, 2021·3 cites·20 claims
- 2288US10714347B2Cut metal gate processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 14, 2020·3 cites·20 claims
- 2387US12218130B2Semiconductor structure cutting process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 2487US12002715B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 4, 2024·2 cites·20 claims
- 2587US10699940B2Gate dielectric preserving gate cut processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 30, 2020·3 cites·20 claims
- 2687US10460994B2Residue-free metal gate cutting for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 29, 2019·3 cites·20 claims
- 2787US2025098257A1Semiconductor device structure with metal gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2886US12363994B2Residue-free metal gate cutting for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 2986US12261172B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 25, 2025·1 cites·20 claims
- 3085US11791403B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·1 cites·14 claims
- 3185US11508582B2Cut metal gate processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·1 cites·21 claims
- 3285US11342444B2Dielectric spacer to prevent contacting shortingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 24, 2022·2 cites·20 claims
- 3385US8071481B2Method for forming highly strained source/drain trenchesKAO TA-WEI·Filed 2009·Granted Dec 6, 2011·11 cites·9 claims
- 3484US12166105B2Semiconductor device structure with metal gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 3584US10461171B2Structure and formation method of semiconductor device with metal gate stacksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 29, 2019·2 cites·20 claims
- 3683US12382650B2Multi-layer dielectric refill for profile control in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
- 3783US12363999B2Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 3883US12302633B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 3983US11056478B2Metal gate structure cutting processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 6, 2021·2 cites·20 claims
- 4083US10424588B2Cutting metal gates in fin field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 24, 2019·3 cites·19 claims
- 4183US2025254977A1Semiconductor structure with cutting depth controlTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4283US2024347623A1Dielectric spacer to prevent contacting shortingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4383US2025318232A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4482US12363976B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 4582US12349268B2Package componentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
- 4682US12206011B2Dummy gate cutting process and resulting gate structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 21, 2025·0 cites·20 claims
- 4782US10756087B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 25, 2020·2 cites·20 claims
- 4882US2025331295A1Fin field-effect transistor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4982US2025324748A1Semiconductor devices with gate isolation structures and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 5082US2025301771A1Transistor gates and methods of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
Showing the top 50 of 115 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →