Inventor · disambiguated record
Sheng-Hao Lin
Also filed as: LIN SHENG-HAO
26 granted patents·3 pending applications·106 citations·filing 1998–2021
95Inventor score
Top patents by PatentIndex Score
29 records- 0197US10008578B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jun 26, 2018·17 cites·8 claims
- 0297US9502519B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted Nov 22, 2016·19 cites·19 claims
- 0394US10714607B1High electron mobility transistorUNITED MICROELECTRONICS CORP·Filed 2019·Granted Jul 14, 2020·10 cites·18 claims
- 0492US10068963B2Fin-type field effect transistor and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted Sep 4, 2018·7 cites·9 claims
- 0588US10923586B2High electron mobility transistor (HEMT)UNITED MICROELECTRONICS CORP·Filed 2019·Granted Feb 16, 2021·4 cites·10 claims
- 0687US9871102B2Method of forming a single-crystal nanowire finFETUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jan 16, 2018·4 cites·11 claims
- 0787US9508834B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted Nov 29, 2016·5 cites·17 claims
- 0881US9666687B1Method for forming semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2016·Granted May 30, 2017·3 cites·18 claims
- 0980US9281400B1Method of fabricating a semiconductor device with fin-shaped structuresUNITED MICROELECTRONICS CORP·Filed 2015·Granted Mar 8, 2016·3 cites·20 claims
- 1063US8084769B2Testkey design pattern for gate oxideTING SHYH-FANN·Filed 2007·Granted Dec 27, 2011·2 cites·10 claims
- 1162US11843046B2High electron mobility transistor (HEMT)UNITED MICROELECTRONICS CORP·Filed 2021·Granted Dec 12, 2023·0 cites·6 claims
- 1258US10439023B2Fin-type field effect transistor and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Oct 8, 2019·0 cites·12 claims
- 1358US10211311B2Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Feb 19, 2019·0 cites·10 claims
- 1456US10431652B2Semiconductor device with single-crystal nanowire FinFETUNITED MICROELECTRONICS CORP·Filed 2017·Granted Oct 1, 2019·0 cites·5 claims
- 1556US10177231B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jan 8, 2019·0 cites·9 claims
- 1652US9837493B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted Dec 5, 2017·0 cites·7 claims
- 1752US9698218B2Method for forming semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jul 4, 2017·0 cites·9 claims
- 1852US6635537B2Method of fabricating gate oxideUNITED MICROELECTRONICS CORP·Filed 2001·Granted Oct 21, 2003·6 cites·19 claims
- 1949US6544849B2Method of fabricating semiconductor device for preventing polysilicon line being damaged during removal of photoresistUNITED MICROELECTRONICS CORP·Filed 2001·Granted Apr 8, 2003·4 cites·20 claims
- 2048US9431482B2Semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2015·Granted Aug 30, 2016·0 cites·7 claims
- 2147US9954082B1Method of fabricating an embedded nonvolatile memory deviceUNITED MICROELECTRONICS CORP·Filed 2017·Granted Apr 24, 2018·0 cites·14 claims
- 2247US6248641B1Method of fabricating shallow trench isolationUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jun 19, 2001·15 cites·23 claims
- 2346US12224338B2HEMT and fabricating method of the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Feb 11, 2025·0 cites·17 claims
- 2443US6955929B2Method of measuring a gate channel length of a metal-oxide semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2004·Granted Oct 18, 2005·1 cites·19 claims
- 2541US9590041B1Semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2015·Granted Mar 7, 2017·0 cites·8 claims
- 2635US2002182834A1Method of manufacturing a transistor with a footed offset spacerFiled 2001·Application pending·0 cites
- 2733US6150273AMethod of fabricating a kink-effect-free shallow trench isolationsUNITED MICROELECTRONICS INC·Filed 1998·Granted Nov 21, 2000·6 cites·13 claims
- 2833US2016351712A1Method for increasing stress in the channel region of fin field effect transistorUNITED MICROELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 2933US2016233303A1Semiconductor structure and manufacturing methods thereofUNITED MICROELECTRONICS CORP·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →