Inventor · disambiguated record
Shun Wu Lin
Also filed as: LIN SHUN-WU
22 granted patents·4 pending applications·201 citations·filing 2004–2025
93Inventor score
Top patents by PatentIndex Score
26 records- 0197US8048810B2Method for metal gate N/P patterningTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Nov 1, 2011·137 cites·20 claims
- 0291US8415254B2Method for removing dummy poly in a gate last processYEH MATT·Filed 2008·Granted Apr 9, 2013·19 cites·20 claims
- 0391US7732344B1High selectivity etching process for metal gate N/P patterningTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jun 8, 2010·26 cites·20 claims
- 0489US10179878B2Wet etch chemistry for selective silicon etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 15, 2019·5 cites·20 claims
- 0579US10676668B2Wet etch chemistry for selective silicon etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 9, 2020·2 cites·20 claims
- 0678US12362189B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 0777US2024387182A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0874US11735426B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 0973US7915105B2Method for patterning a metal gateTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Mar 29, 2011·5 cites·18 claims
- 1073US2025254939A1Semiconductor devices including backside power rails and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1170US12317551B2Semiconductor devices including backside power rails and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 27, 2025·0 cites·20 claims
- 1270US11854816B2Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·19 claims
- 1368US8268085B2Methods for forming metal gate transistorsYEH MATT·Filed 2010·Granted Sep 18, 2012·2 cites·17 claims
- 1466US12381092B2Etchant for etching a cobalt-containing member in a semiconductor structure and method of etching a cobalt-containing member in a semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 5, 2025·0 cites·20 claims
- 1566US11101135B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 24, 2021·0 cites·20 claims
- 1664US8357617B2Method of patterning a metal gate of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jan 22, 2013·1 cites·20 claims
- 1763US11476124B2Etchant for etching a cobalt-containing member in a semiconductor structure and method of etching a cobalt-containing member in a semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 18, 2022·0 cites·20 claims
- 1861US10529572B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 7, 2020·0 cites·21 claims
- 1955US8993452B2Method of patterning a metal gate of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 31, 2015·0 cites·20 claims
- 2054US9362124B2Method of patterning a metal gate of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 7, 2016·0 cites·20 claims
- 2154US7129184B2Method of depositing an epitaxial layer of SiGe subsequent to a plasma etchTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Oct 31, 2006·4 cites·20 claims
- 2249US7727900B2Surface preparation for gate oxide formation that avoids chemical oxide formationTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jun 1, 2010·0 cites·18 claims
- 2344US8173504B2Method of fabricating gate electrode using a treated hard maskYEH MATT·Filed 2010·Granted May 8, 2012·0 cites·20 claims
- 2444US2008060682A1High temperature spm treatment for photoresist strippingTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 2540US8114721B2Method of controlling gate thickness in forming FinFET devicesLIN SHUN WU·Filed 2009·Granted Feb 14, 2012·0 cites·20 claims
- 2635US2011097867A1Method of controlling gate thicknesses in forming fusi gatesTAIWAN SEMICONDUCTOR MFG·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →