Inventor · disambiguated record
Shy-Jay Lin
Also filed as: LIN SHY-JAY
125 granted patents·21 pending applications·875 citations·filing 1998–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD104TAIWAN SEMICONDUCTOR MFG28WANG WEN CHUAN3Liu pei-yi2PENG JUI-CHUNG2
Top patents by PatentIndex Score
146 records- 0199US8722286B2Devices and methods for improved reflective electron beam lithographyYU CHEN-HUA·Filed 2012·Granted May 13, 2014·82 cites·20 claims
- 0298US11968844B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 23, 2024·2 cites·20 claims
- 0398US11723218B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 8, 2023·4 cites·20 claims
- 0498US11716859B2Memory device, semiconductor device, and method of fabricating semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 1, 2023·8 cites·20 claims
- 0598US11289143B2SOT-MRAM with shared selectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·11 cites·20 claims
- 0698US10038137B2MRAM device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 31, 2018·50 cites·20 claims
- 0798US8828632B2Multiple-grid exposure methodTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 9, 2014·26 cites·20 claims
- 0898US8762900B2Method for proximity correctionSHIN JAW-JUNG·Filed 2012·Granted Jun 24, 2014·121 cites·13 claims
- 0997US11342015B1Memory device and memory circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·6 cites·20 claims
- 1097US10276784B1Semiconductor structure and associated operating and fabricating methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·22 cites·20 claims
- 1197US9810994B2Systems and methods for high-throughput and small-footprint scanning exposure for lithographyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 7, 2017·8 cites·20 claims
- 1297US8846278B2Electron beam lithography system and method for improving throughputTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 30, 2014·26 cites·14 claims
- 1397US8822106B2Grid refinement methodTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Sep 2, 2014·31 cites·22 claims
- 1497US8584057B2Non-directional dithering methodsLiu pei-yi·Filed 2012·Granted Nov 12, 2013·33 cites·20 claims
- 1597US8510687B1Error diffusion and grid shift in lithographyLiu pei-yi·Filed 2012·Granted Aug 13, 2013·32 cites·20 claims
- 1696US12022665B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·2 cites·20 claims
- 1796US8530121B2Multiple-grid exposure methodWANG WEN CHUAN·Filed 2012·Granted Sep 10, 2013·37 cites·20 claims
- 1896US8524427B2Electron beam lithography system and method for improving throughputSHIN JAW-JUNG·Filed 2011·Granted Sep 3, 2013·30 cites·20 claims
- 1996US8464186B2Providing electron beam proximity effect correction by simulating write operations of polygonal shapesWANG HUNG-CHUN·Filed 2011·Granted Jun 11, 2013·29 cites·20 claims
- 2095US9594862B2Method of fabricating an integrated circuit with non-printable dummy featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 14, 2017·19 cites·16 claims
- 2194US11844287B2Magnetic tunneling junction with synthetic free layer for SOT-MRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 12, 2023·2 cites·20 claims
- 2294US11430832B2Semiconductor MRAM device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 30, 2022·7 cites·20 claims
- 2394US11107975B2Magnetic tunnel junction structures and related methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·4 cites·20 claims
- 2493US9734883B1Reference circuit and MRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 15, 2017·13 cites·20 claims
- 2592US11456100B2MRAM stacks, MRAM devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 27, 2022·2 cites·20 claims
- 2692US8199314B2System and method for improving immersion scanner overlay performancePENG JUI-CHUNG·Filed 2011·Granted Jun 12, 2012·12 cites·20 claims
- 2790US12356868B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 8, 2025·0 cites·20 claims
- 2890US11437434B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·2 cites·20 claims
- 2990US9436788B2Method of fabricating an integrated circuit with block dummy for optimized pattern density uniformityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 6, 2016·11 cites·19 claims
- 3090US9436787B2Method of fabricating an integrated circuit with optimized pattern density uniformityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 6, 2016·11 cites·20 claims
- 3190US2025370325A1Euv lithography masks and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3289US11061317B2Method of fabricating an integrated circuit with non-printable dummy featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 13, 2021·4 cites·20 claims
- 3389US10541361B2Magnetic random access memory and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 21, 2020·2 cites·20 claims
- 3489US2025318438A1Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3588US11765984B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 19, 2023·1 cites·20 claims
- 3688US10756255B2Semiconductor device with asymmetrical pinned magnets, and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 25, 2020·2 cites·17 claims
- 3788US9329488B2Grid refinement methodTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 3, 2016·2 cites·20 claims
- 3888US7851774B2System and method for direct writing to a waferTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Dec 14, 2010·9 cites·20 claims
- 3987US12334238B2MRAM stacks, MRAM devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 17, 2025·0 cites·20 claims
- 4087US10170276B2Method of fabricating an integrated circuit with a pattern density-outlier-treatment for optimized pattern density uniformityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 1, 2019·3 cites·20 claims
- 4187US8972908B2Method for electron beam proximity correction with improved critical dimension accuracyTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 3, 2015·10 cites·20 claims
- 4286US12324165B2Methods of writing and forming memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 3, 2025·0 cites·20 claims
- 4386US12317513B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 27, 2025·0 cites·20 claims
- 4485US12495721B2Semiconductor device with asymmetrical pinned magnets, and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 9, 2025·0 cites·20 claims
- 4585US12322428B2SOT-MRAM with shared selectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·19 claims
- 4685US8822107B2Grid refinement methodTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 2, 2014·5 cites·25 claims
- 4785US2024387090A1Mram stacks, mram devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4885US2025344608A1Memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4984US12329041B2Magnetic tunneling junction with synthetic free layer for SOT-MRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 10, 2025·0 cites·20 claims
- 5084US12156479B2Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 26, 2024·1 cites·20 claims
Showing the top 50 of 146 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →