Inventor · disambiguated record
Shyam P. Murarka
Also filed as: MURARKA SHYAM P
17 granted patents·4 pending applications·1,063 citations·filing 1977–2004
96Inventor score
Top patents by PatentIndex Score
21 records- 0197US6319387B1Copper alloy electroplating bath for microelectronic applicationsSEMITOOL INC·Filed 1999·Granted Nov 20, 2001·300 cites·12 claims
- 0297US4324038AMethod of fabricating MOS field effect transistorsBELL TELEPHONE LABOR INC·Filed 1980·Granted Apr 13, 1982·128 cites·20 claims
- 0396US4378628ACobalt silicide metallization for semiconductor integrated circuitsBELL TELEPHONE LABOR INC·Filed 1981·Granted Apr 5, 1983·105 cites·22 claims
- 0493US4502209AForming low-resistance contact to siliconAT & T BELL LAB·Filed 1983·Granted Mar 5, 1985·75 cites·9 claims
- 0591US5637185ASystems for performing chemical mechanical planarization and process for conducting sameRENSSELAER POLYTECH INST·Filed 1995·Granted Jun 10, 1997·118 cites·27 claims
- 0691US4276557AIntegrated semiconductor circuit structure and method for making itBELL TELEPHONE LABOR INC·Filed 1978·Granted Jun 30, 1981·59 cites·7 claims
- 0789US4337476ASilicon rich refractory silicides as gate metalBELL TELEPHONE LABOR INC·Filed 1980·Granted Jun 29, 1982·48 cites·7 claims
- 0887US6368966B1Metallization structures for microelectronic applications and process for forming the structuresSEMITOOL INC·Filed 1999·Granted Apr 9, 2002·71 cites·14 claims
- 0983US6486533B2Metallization structures for microelectronic applications and process for forming the structuresSEMITOOL INC·Filed 2001·Granted Nov 26, 2002·23 cites·46 claims
- 1081US4149905AMethod of limiting stacking faults in oxidized silicon wafersBELL TELEPHONE LABOR INC·Filed 1977·Granted Apr 17, 1979·35 cites·2 claims
- 1179US4332839AMethod for making integrated semiconductor circuit structure with formation of Ti or Ta silicideBELL TELEPHONE LABOR INC·Filed 1981·Granted Jun 1, 1982·30 cites·3 claims
- 1279US4134125APassivation of metallized semiconductor substratesBELL TELEPHONE LABOR INC·Filed 1977·Granted Jan 9, 1979·36 cites·2 claims
- 1363US4522842ABoron nitride X-ray masks with controlled stressAT & T BELL LAB·Filed 1982·Granted Jun 11, 1985·16 cites·20 claims
- 1461US7019386B2Siloxane epoxy polymers for low-k dielectric applicationsRENSSELAER POLYTECH INST·Filed 2004·Granted Mar 28, 2006·11 cites·14 claims
- 1557US7202159B2Diffusion barriers comprising a self-assembled monolayerRENSSELAER POLYTECH INST·Filed 2004·Granted Apr 10, 2007·5 cites·14 claims
- 1644US7285842B2Siloxane epoxy polymers as metal diffusion barriers to reduce electromigrationRENSSELAER POLYTECH INST·Filed 2004·Granted Oct 23, 2007·2 cites·21 claims
- 1740US2002079487A1Diffusion barriers comprising a self-assembled monolayerFiled 2001·Application pending·0 cites
- 1837US2003087534A1Surface modification for barrier to ionic penetrationRENSSELAER POLYTECH INST·Filed 2002·Application pending·0 cites
- 1936US2002105081A1Self-assembled near-zero-thickness molecular layers as diffusion barriers for Cu metallizationFiled 2001·Application pending·0 cites
- 2031US2005239295A1Chemical treatment of material surfacesWANG PEI-L·Filed 2004·Application pending·0 cites
- 2129US5956604AOhmic contact to Gallium Arsenide using epitaxially deposited Cobalt DigermanideUS ARMY·Filed 1997·Granted Sep 21, 1999·1 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →