Inventor · disambiguated record
Shesh Mani Pandey
Also filed as: PANDEY SHESH M · PANDEY SHESH MANI
76 granted patents·48 pending applications·148 citations·filing 2011–2024
98Inventor score
Files withGLOBALFOUNDRIES INC55GLOBALFOUNDRIES US INC43MICROCHIP TECH INC23PANDEY SHESH MANI1SCHEIPER THILO1
Top patents by PatentIndex Score
124 records- 0198US10236213B1Gate cut structure with liner spacer and related methodGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 19, 2019·25 cites·9 claims
- 0296US11803009B2Photonics structures having a locally-thickened dielectric layerGLOBALFOUNDRIES US INC·Filed 2022·Granted Oct 31, 2023·4 cites·20 claims
- 0395US10475791B1Transistor fins with different thickness gate dielectricGLOBALFOUNDRIES INC·Filed 2018·Granted Nov 12, 2019·12 cites·13 claims
- 0494US9087860B1Fabricating fin-type field effect transistor with punch-through stop regionGLOBALFOUNDRIES INC·Filed 2014·Granted Jul 21, 2015·23 cites·20 claims
- 0592US10002793B1Sub-fin doping methodGLOBALFOUNDRIES INC·Filed 2017·Granted Jun 19, 2018·8 cites·16 claims
- 0691US10079308B1Vertical transistor structure with looped channelGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 18, 2018·8 cites·20 claims
- 0791US9947788B2Device with diffusion blocking layer in source/drain regionGLOBALFOUNDRIES INC·Filed 2016·Granted Apr 17, 2018·8 cites·18 claims
- 0889US10002797B1Chip integration including vertical field-effect transistors and bipolar junction transistorsGLOBALFOUNDRIES INC·Filed 2017·Granted Jun 19, 2018·7 cites·19 claims
- 0988US10084093B1Low resistance conductive contactsGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 25, 2018·6 cites·10 claims
- 1087US10164099B2Device with diffusion blocking layer in source/drain regionGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 25, 2018·5 cites·11 claims
- 1186US10825910B1Shaped gate caps in dielectric-lined openingsGLOBALFOUNDRIES INC·Filed 2019·Granted Nov 3, 2020·4 cites·16 claims
- 1285US9543297B1Fin-FET replacement metal gate structure and method of manufacturing the sameGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 10, 2017·5 cites·11 claims
- 1384US10586736B2Hybrid fin cut with improved fin profilesGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 10, 2020·4 cites·19 claims
- 1483US9406752B2FinFET conformal junction and high EPI surface dopant concentration method and deviceGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 2, 2016·3 cites·13 claims
- 1579US10403742B2Field-effect transistors with fins formed by a damascene-like processGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 3, 2019·2 cites·14 claims
- 1678US9419082B2Source/drain profile engineering for enhanced p-MOSFETGLOBALFOUNDRIES INC·Filed 2014·Granted Aug 16, 2016·4 cites·5 claims
- 1777US11450678B2Split gate (SG) memory device and novel methods of making the SG-memory deviceGLOBALFOUNDRIES US INC·Filed 2019·Granted Sep 20, 2022·2 cites·20 claims
- 1877US10361289B1Gate oxide formation through hybrid methods of thermal and deposition processes and method for producing the sameGLOBALFOUNDRIES INC·Filed 2018·Granted Jul 23, 2019·2 cites·18 claims
- 1977US9966433B2Multiple-step epitaxial growth S/D regions for NMOS FinFETGLOBALFOUNDRIES INC·Filed 2016·Granted May 8, 2018·2 cites·9 claims
- 2073US10056486B2Methods for fin thinning providing improved SCE and S/D EPI growthGLOBALFOUNDRIES INC·Filed 2016·Granted Aug 21, 2018·2 cites·8 claims
- 2173US9679990B2Semiconductor structure(s) with extended source/drain channel interfaces and methods of fabricationGLOBALFOUNDRIES INC·Filed 2014·Granted Jun 13, 2017·2 cites·13 claims
- 2272US11094827B2Semiconductor devices with uniform gate height and method of forming sameGLOBALFOUNDRIES US INC·Filed 2019·Granted Aug 17, 2021·1 cites·20 claims
- 2371US10840245B1Semiconductor device with reduced parasitic capacitanceGLOBALFOUNDRIES INC·Filed 2019·Granted Nov 17, 2020·1 cites·20 claims
- 2471US9923046B1Semiconductor device resistor structureGLOBALFOUNDRIES INC·Filed 2016·Granted Mar 20, 2018·1 cites·12 claims
- 2570US9577040B2FinFET conformal junction and high epi surface dopant concentration method and deviceGLOBALFOUNDRIES INC·Filed 2016·Granted Feb 21, 2017·1 cites·20 claims
- 2668US12388015B2E-fuse with metal fillGLOBALFOUNDRIES US INC·Filed 2022·Granted Aug 12, 2025·0 cites·20 claims
- 2768US10522538B1Using source/drain contact cap during gate cutGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 31, 2019·1 cites·19 claims
- 2866US12276831B2Enlarged multilayer nitride waveguide for photonic integrated circuitGLOBALFOUNDRIES US INC·Filed 2022·Granted Apr 15, 2025·0 cites·19 claims
- 2966US10347748B2Methods of forming source/drain regions on FinFET devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 9, 2019·1 cites·23 claims
- 3066US9647145B1Method, apparatus, and system for increasing junction electric field of high current diodeGLOBALFOUNDRIES INC·Filed 2016·Granted May 9, 2017·1 cites·20 claims
- 3165US11835764B2Multiple-core heterogeneous waveguide structures including multiple slotsGLOBALFOUNDRIES US INC·Filed 2022·Granted Dec 5, 2023·0 cites·20 claims
- 3264US12506070B2Electronically programmable fuse with heating transistorsGLOBALFOUNDRIES US INC·Filed 2023·Granted Dec 23, 2025·0 cites·20 claims
- 3364US11971572B2Optical waveguide with stacked cladding material layersGLOBALFOUNDRIES US INC·Filed 2022·Granted Apr 30, 2024·0 cites·20 claims
- 3464US11881523B2Heterojunction bipolar transistorsGLOBALFOUNDRIES US INC·Filed 2022·Granted Jan 23, 2024·0 cites·16 claims
- 3564US11869958B2Heterojunction bipolar transistorsGLOBALFOUNDRIES US INC·Filed 2022·Granted Jan 9, 2024·0 cites·17 claims
- 3663US2025323088A1Semiconductor chip and method for manufacturing sameMICROCHIP TECH INC·Filed 2024·Application pending·0 cites
- 3763US2025336871A1Semiconductor device and method for manufacturing sameMICROCHIP TECH INC·Filed 2024·Application pending·0 cites
- 3862US12176427B2Bipolar transistor and gate structure on semiconductor fin and methods to form sameGLOBALFOUNDRIES US INC·Filed 2022·Granted Dec 24, 2024·0 cites·18 claims
- 3962US2025140713A1Moisture resistant semicondutor deviceMICROCHIP TECH INC·Filed 2024·Application pending·0 cites
- 4062US2025386568A1Transistor and method for manufacturing sameMICROCHIP TECH INC·Filed 2024·Application pending·0 cites
- 4162US2025324657A1Transistor and method for manufacturing sameMICROCHIP TECH INC·Filed 2024·Application pending·0 cites
- 4262US2025220989A1Finfet device and method for manufacturing sameMICROCHIP TECH INC·Filed 2024·Application pending·0 cites
- 4362US2025294800A1Transistor and method for manufacturing sameMICROCHIP TECH INC·Filed 2024·Application pending·0 cites
- 4462US2025107194A1Silicon carbide power mosfet and method for manufacturing sameMICROCHIP TECH INC·Filed 2024·Application pending·0 cites
- 4562US2025385201A1Semiconductor device and method for manufacturing sameMICROCHIP TECH INC·Filed 2024·Application pending·0 cites
- 4662US2025324630A1High electron mobility transistor and method for manufacturing sameMICROCHIP TECH INC·Filed 2024·Application pending·0 cites
- 4762US2025107211A1Hybrid channel power semiconductor device and method for manufacturing sameMICROCHIP TECH INC·Filed 2024·Application pending·0 cites
- 4862US2025338536A1High electron mobility transistor and method for manufacturing sameMICROCHIP TECH INC·Filed 2024·Application pending·0 cites
- 4962US2025294794A1High electron mobility transistor and method for manufacturing sameMICROCHIP TECH INC·Filed 2024·Application pending·0 cites
- 5062US2025294824A1Transistor and method for manufacturing sameMICROCHIP TECH INC·Filed 2024·Application pending·0 cites
Showing the top 50 of 124 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →