Inventor · disambiguated record
Shigeki Sakai
Also filed as: SAKAI SHIGEKI
41 granted patents·7 pending applications·667 citations·filing 1984–2023
98Inventor score
Files withAGENCY IND SCIENCE TECHN6AIST6HARNESS SYST TECH RES LTD6NAT INST OF ADVANCED IND SCIEN6NISSIN ELECTRIC CO LTD5
Top patents by PatentIndex Score
48 records- 0191US6595789B2Electronic unit, shield cable connecting structure, connecting method, wires waterproof-connecting structure, and methodAUTONETWORKS TECHNOLOGIES LTD·Filed 2001·Granted Jul 22, 2003·56 cites·4 claims
- 0288US10192972B2Semiconductor ferroelectric storage transistor and method for manufacturing sameAIST·Filed 2017·Granted Jan 29, 2019·4 cites·33 claims
- 0388US5940502APhone holderHARNESS SYST TECH RES LTD·Filed 1997·Granted Aug 17, 1999·73 cites·31 claims
- 0487US4749888AJosephson transmission line deviceAGENCY IND SCIENCE TECHN·Filed 1987·Granted Jun 7, 1988·96 cites·50 claims
- 0586US6339699B1Phone holderHARNESS SYST TECH RES LTD·Filed 1998·Granted Jan 15, 2002·58 cites·15 claims
- 0685US6898105B2Ferroelectric non-volatile memory device having integral capacitor and gate electrode, and driving method of a ferroelectric non-volatile memory deviceNIPPON PRECISION CIRCUITS·Filed 2003·Granted May 24, 2005·37 cites·16 claims
- 0781US10686043B2Method of making semiconductor ferroelectric memory element, and semiconductor ferroelectric memory transistorAIST·Filed 2017·Granted Jun 16, 2020·2 cites·12 claims
- 0881US10600608B1Ion sourceNISSIN ION EQUIPMENT CO LTD·Filed 2019·Granted Mar 24, 2020·3 cites·20 claims
- 0981US6784473B2Semiconductor nonvolatile storage element and method of fabricating the sameNAT INST OF ADVANCED IND SCIEN·Filed 2002·Granted Aug 31, 2004·22 cites·8 claims
- 1081US4589001AQuasiparticle injection control type superconducting deviceAGENCY IND SCIENCE TECHN·Filed 1984·Granted May 13, 1986·40 cites·12 claims
- 1180US6297594B1Plasma source ion implanting apparatus using the sameNISSIN ELECTRIC CO LTD·Filed 2000·Granted Oct 2, 2001·24 cites·7 claims
- 1278US9780186B2Semiconductor ferroelectric storage transistor and method for manufacturing sameNAT INST ADVANCED IND SCIENCE & TECH·Filed 2013·Granted Oct 3, 2017·3 cites·16 claims
- 1378US6215870B1Phone holderHARNESS SYST TECH RES LTD·Filed 1998·Granted Apr 10, 2001·45 cites·15 claims
- 1477US6537092B2Arc discharge suppressive connectorAUTONETWORKS TECHNOLOGIES LTD·Filed 2002·Granted Mar 25, 2003·21 cites·14 claims
- 1575US7226795B2Semiconductor-ferroelectric storage devices and processes for producing the sameNAT INST OF ADVANCED IND SCIEN·Filed 2003·Granted Jun 5, 2007·17 cites·22 claims
- 1675US6753702B2Semiconductor integrated circuit and its layout methodNEC ELECTRONICS CORP·Filed 2002·Granted Jun 22, 2004·22 cites·8 claims
- 1774US9818869B2Ferroelectric device and method of its manufactureAIST·Filed 2014·Granted Nov 14, 2017·2 cites·25 claims
- 1874US8081499B2Semiconductor integrated circuitTAKAHASHI MITSUE·Filed 2006·Granted Dec 20, 2011·7 cites·32 claims
- 1970US11069713B2Semiconductor memory element, other elements, and their production methodsAIST·Filed 2017·Granted Jul 20, 2021·1 cites·22 claims
- 2068US10782317B2Contact probeNIDEC READ CORP·Filed 2018·Granted Sep 22, 2020·0 cites·20 claims
- 2166US7935944B2Ion beam irradiating apparatus, and method of producing semiconductor deviceUNIV KYOTO·Filed 2007·Granted May 3, 2011·2 cites·9 claims
- 2266US6489792B1Charge-up measuring apparatusNISSIN ELECTRIC CO LTD·Filed 2000·Granted Dec 3, 2002·6 cites·8 claims
- 2366US6461737B2Epitaxial compound structure and device comprising sameAGENCY IND SCIENCE TECHN·Filed 2000·Granted Oct 8, 2002·10 cites·21 claims
- 2465US7667252B2Semiconductor nonvolatile storage element and method of fabricating the sameNAT INST OF ADVANCED IND SCIEN·Filed 2006·Granted Feb 23, 2010·2 cites·18 claims
- 2564US8461548B2Ion beam irradiation device and method for suppressing ion beam divergenceNICOLAESCU DAN·Filed 2010·Granted Jun 11, 2013·2 cites·11 claims
- 2664US2025144136A1Fetal macrophage and cell preparationUNIV KEIO·Filed 2023·Application pending·0 cites
- 2763US5122483AMethod of forming a highly insulative thin filmsNISSIN ELECTRIC CO LTD·Filed 1990·Granted Jun 16, 1992·36 cites·8 claims
- 2861US7455030B2Plasma generating apparatusNISSIN ION EQUIPMENT CO LTD·Filed 2008·Granted Nov 25, 2008·2 cites·2 claims
- 2960US11415599B2Contact probe and electrical connection jigNIDEC READ CORP·Filed 2017·Granted Aug 16, 2022·0 cites·20 claims
- 3059US11335783B2Method of making semiconductor ferroelectric memory element, and semiconductor ferroelectric memory transistorAIST·Filed 2020·Granted May 17, 2022·0 cites·7 claims
- 3159US8159873B2Semiconductor integrated circuitTAKAHASHI MITSUE·Filed 2007·Granted Apr 17, 2012·2 cites·55 claims
- 3258US8139388B2Nonvolatile semiconductor storage deviceTAKAHASHI MITSUE·Filed 2009·Granted Mar 20, 2012·4 cites·5 claims
- 3357US6651582B2Method and device for irradiating an ion beam, and related method and device thereofNISSIN ELECTRIC CO LTD·Filed 2001·Granted Nov 25, 2003·6 cites·3 claims
- 3455US6084963APhone holder for selectively holding a mobile phoneHARNESS SYST TECH RES LTD·Filed 1997·Granted Jul 4, 2000·25 cites·20 claims
- 3553US6686599B2Ion production device for ion beam irradiation apparatusNISSIN ELECTRIC CO LTD·Filed 2001·Granted Feb 3, 2004·2 cites·21 claims
- 3651US6097810APhone holderHARNESS SYST TECH RES LTD·Filed 1998·Granted Aug 1, 2000·19 cites·33 claims
- 3751US2018130909A1Ferroelectric device and method for manufacturing sameAIST·Filed 2017·Application pending·0 cites
- 3851US2025063660A1Multilayer substrate and jigNIDEC ADVANCE TECH CORPORATION·Filed 2022·Application pending·0 cites
- 3949US2010057839A1System and method for distributing design system, design system distributing server, and client systemNEC ELECTRONICS CORP·Filed 2009·Application pending·0 cites
- 4044US7608307B2Method of forming film upon a substrateNAT INST OF ADVANCED IND SCIEN·Filed 2003·Granted Oct 27, 2009·0 cites·18 claims
- 4144US6441394B2Intrinsic Josephson superconducting tunnel junction deviceNAT INST OF ADVANCED IND SCIEN·Filed 2000·Granted Aug 27, 2002·5 cites·23 claims
- 4241US6183552B1Crystal growth method for thin films of BiSrCaCuO oxidesAGENCY IND SCIENCE TECHN·Filed 1999·Granted Feb 6, 2001·6 cites·15 claims
- 4340US2004217401A1Semiconductor nonvolatile storage element and method of fabricating the sameNAT INST OF ADVANCED IND SCIEN·Filed 2004·Application pending·0 cites
- 4440US2002032041A1Phone holderHARNESS SYST TECH RES LTD·Filed 2001·Application pending·0 cites
- 4539US2020300930A1Method for producing mi element and mi elementNIDEC READ CORP·Filed 2018·Application pending·0 cites
- 4636US5886778AMethod of measuring atomic beam flux rate in film growth apparatusAGENCY IND SCIENCE TECHN·Filed 1997·Granted Mar 23, 1999·4 cites·3 claims
- 4734US10002751B2Ion beam irradiation apparatusNISSIN ION EQUIPMENT CO LTD·Filed 2016·Granted Jun 19, 2018·0 cites·16 claims
- 4831US6071338AMethod for crystal growth of multi-element oxide thin film containing bismuth as constituent elementAGENCY IND SCIENCE TECHN·Filed 1997·Granted Jun 6, 2000·1 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →