Inventor · disambiguated record
Shiqian Shao
Also filed as: SHAO SHIQIAN
10 granted patents·32 citations·filing 2019–2022
84Inventor score
Top patents by PatentIndex Score
10 records- 0198US11404123B1Non-volatile memory with multiple wells for word line switch transistorsSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Aug 2, 2022·6 cites·20 claims
- 0296US11424207B1Non-volatile memory with different use of metal lines in word line hook up regionsSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Aug 23, 2022·4 cites·20 claims
- 0395US11139237B2Three-dimensional memory device containing horizontal and vertical word line interconnections and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2019·Granted Oct 5, 2021·17 cites·6 claims
- 0492US11973044B2Non-volatile memory with efficient signal routingSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Apr 30, 2024·2 cites·19 claims
- 0591US11728305B2Capacitor structure including bonding pads as electrodes and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Aug 15, 2023·2 cites·14 claims
- 0684US11817150B2Non-volatile memory with different word line hook up regions based on pass through signalsSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Nov 14, 2023·1 cites·20 claims
- 0759US11894056B2Non-volatile memory with efficient word line hook-upSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Feb 6, 2024·0 cites·20 claims
- 0857US12406729B2Non-volatile memory with inter-die connectionSANDISK TECHNOLOGIES INC·Filed 2022·Granted Sep 2, 2025·0 cites·17 claims
- 0955US12354955B2Three-dimensional memory device with high contact via density and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Jul 8, 2025·0 cites·20 claims
- 1055US12347492B2Three-dimensional memory device with high contact via density and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2022·Granted Jul 1, 2025·0 cites·23 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →