Inventor · disambiguated record
Shyh-Chiang Shen
Also filed as: SHEN SHYH-CHIANG
8 granted patents·6 pending applications·261 citations·filing 1999–2023
88Inventor score
Files withUNIV ILLINOIS5XINDIUM TECHNOLOGIES INC4GEORGIA TECH RES INST3VANGUARD INT SEMICONDUCT CORP1
Top patents by PatentIndex Score
14 records- 0197US6143997ALow actuation voltage microelectromechanical device and method of manufactureUNIV ILLINOIS·Filed 1999·Granted Nov 7, 2000·162 cites·13 claims
- 0286US6727530B1Integrated photodetector and heterojunction bipolar transistorsXINDIUM TECHNOLOGIES INC·Filed 2003·Granted Apr 27, 2004·38 cites·32 claims
- 0376US6919784B2High cycle MEMS deviceUNIV ILLINOIS·Filed 2002·Granted Jul 19, 2005·17 cites·19 claims
- 0476US6717496B2Electromagnetic energy controlled low actuation voltage microelectromechanical switchUNIV ILLINOIS·Filed 2001·Granted Apr 6, 2004·20 cites·14 claims
- 0574US6678943B1Method of manufacturing a microelectromechanical switchUNIV ILLINOIS·Filed 2000·Granted Jan 20, 2004·15 cites·7 claims
- 0655US7142076B2High cycle MEMS deviceUNIV ILLINOIS·Filed 2004·Granted Nov 28, 2006·6 cites·10 claims
- 0752US2024178285A1High electron mobility transistor and fabrication method thereofVANGUARD INT SEMICONDUCT CORP·Filed 2023·Application pending·0 cites
- 0851US2022406894A1Semiconductor Devices and Methods of Making SameGEORGIA TECH RES INST·Filed 2022·Application pending·0 cites
- 0947US7115918B2Collector layer structure for a double hetero-junction bipolar transistor for power amplification applicationsXINDIUM TECHNOLOGIES INC·Filed 2004·Granted Oct 3, 2006·3 cites·27 claims
- 1047US2010072518A1Semiconductor devices and methods of fabricating sameGEORGIA TECH RES INST·Filed 2009·Application pending·0 cites
- 1145US11195722B2Method of manufacture using complementary conductivity-selective wet-etching techniques for III-nitride materials and devicesGEORGIA TECH RES INST·Filed 2018·Granted Dec 7, 2021·0 cites·23 claims
- 1245US2007001195A1Collector layer structure for a double hetero-junction bipolar transistor for power amplification applicationsXINDIUM TECHNOLOGIES INC·Filed 2006·Application pending·0 cites
- 1343US2006063340A1Collector layer structure for a double hetero-junction bipolar transistor for power amplification applicationsXINDIUM TECHNOLOGIES INC·Filed 2005·Application pending·0 cites
- 1438US2004173817A1Integrated photodetector and heterojunction bipolar transistorsFiled 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →