Inventor · disambiguated record
Shing-Ren Sheu
Also filed as: SHEU SHING-REN
21 granted patents·8 pending applications·354 citations·filing 1993–2024
96Inventor score
Top patents by PatentIndex Score
29 records- 0192US7859285B2Device under test array for identifying defectsUNITED MICROELECTRONICS CORP·Filed 2008·Granted Dec 28, 2010·22 cites·11 claims
- 0288US6455943B1Bonding pad structure of semiconductor device having improved bondabilityUNITED MICROELECTRONICS CORP·Filed 2001·Granted Sep 24, 2002·51 cites·10 claims
- 0371US5382534AField effect transistor with recessed buried source and drain regionsUNITED MICROELECTRONICS CORP·Filed 1994·Granted Jan 17, 1995·28 cites·30 claims
- 0470US6054353AShort turn around time mask ROM processUNITED MICROELECTRONICS CORP·Filed 1996·Granted Apr 25, 2000·27 cites·20 claims
- 0570US5429975AMethod of implanting during manufacture of ROM deviceUNITED MICROELECTRONICS CORP·Filed 1993·Granted Jul 4, 1995·25 cites·11 claims
- 0670US2025028116A1Silicon photonics structure and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 0769US6417548B1Variable work function transistor high density mask ROMUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jul 9, 2002·26 cites·8 claims
- 0867US7026234B2Parasitic capacitance-preventing dummy solder bump structure and method of making the sameUNITED MICROELECTRONICS CORP·Filed 2004·Granted Apr 11, 2006·14 cites·17 claims
- 0967US5691234ABuried contact method to release plasma-induced charging damage on deviceUNITED MICROELECTRONICS CORP·Filed 1995·Granted Nov 25, 1997·23 cites·21 claims
- 1067US5576573AStacked CVD oxide architecture multi-state memory cell for mask read-only memoriesUNITED MICROELECTRONICS CORP·Filed 1995·Granted Nov 19, 1996·36 cites·11 claims
- 1166US5571737AMetal oxide semiconductor device integral with an electro-static discharge circuitUNITED MICROELECTRONICS CORP·Filed 1994·Granted Nov 5, 1996·22 cites·16 claims
- 1256US6093626ABuried contact method to release plasma-included charging damage on deviceUNITED MICROELECTRONICS CORP·Filed 1997·Granted Jul 25, 2000·14 cites·10 claims
- 1355US5597753ACVD oxide coding method for ultra-high density mask read-only-memory (ROM)UNITED MICROELECTRONICS CORP·Filed 1994·Granted Jan 28, 1997·17 cites·25 claims
- 1454US2009029541A1Method of fabricating anti-fuse and method of programming anti-fuseUNITED MICROELECTRONICS CORP·Filed 2008·Application pending·0 cites
- 1553US2025219031A1Semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 1652US2009026576A1Anti-fuseUNITED MICROELECTRONICS CORP·Filed 2007·Application pending·0 cites
- 1752US2024347503A1Semiconductor structure and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Application pending·0 cites
- 1851US2025216431A1Capacitance measurement method for a capacitive deviceUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 1947US6146950AMethod of manufacturing multiple metallic layered embedded ROMUNITED MICROELECTRONICS CORP·Filed 1999·Granted Nov 14, 2000·11 cites·16 claims
- 2047US5942786AVariable work function transistor high density mask ROMUNITED MICROELECTRONICS CORP·Filed 1996·Granted Aug 24, 1999·9 cites·14 claims
- 2143US6350654B1Semiconductor read-only memory device and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 1998·Granted Feb 26, 2002·6 cites·10 claims
- 2243US2008211060A1Anti-fuse which will not generate a non-linear current after being blown and otp memory cell utilizing the anti-fuseCHANG KUANG-YEH·Filed 2007·Application pending·0 cites
- 2341US5567970APost metal mask ROM with thin glass dielectric layer formed over word linesUNITED MICROELECTRONICS CORP·Filed 1995·Granted Oct 22, 1996·5 cites·20 claims
- 2440US5998832AMetal oxide semiconductor device for an electro-static discharge circuitUNITED MICROELECTRONICS CORP·Filed 1997·Granted Dec 7, 1999·5 cites·11 claims
- 2540US2014070404A1Semiconductor package structure and interposer thereforSHEU SHING-REN·Filed 2012·Application pending·0 cites
- 2638US5488009APost-titanium nitride mask ROM programming methodUNITED MICROELECTRONICS CORP·Filed 1994·Granted Jan 30, 1996·6 cites·20 claims
- 2736US6380587B1Semiconductor read-only memory device and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2000·Granted Apr 30, 2002·0 cites·3 claims
- 2836US5654576APost-titanium nitride mask ROM programming method and device manufactured therebyUNITED MICROELECTRONICS CORP·Filed 1995·Granted Aug 5, 1997·4 cites·9 claims
- 2934US5589411AProcess for fabricating a high-voltage MOSFETUNITED MICROELECTRONICS CORP·Filed 1995·Granted Dec 31, 1996·3 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →