Inventor · disambiguated record
Sheng-Hung Shih
Also filed as: SHIH SHENG-HUNG
63 granted patents·24 pending applications·246 citations·filing 2013–2025
98Inventor score
Top patents by PatentIndex Score
87 records- 0199US10008662B2Perpendicular magnetic tunneling junction (MTJ) for improved magnetoresistive random-access memory (MRAM) processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 26, 2018·53 cites·18 claims
- 0299US9172036B2Top electrode blocking layer for RRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 27, 2015·29 cites·20 claims
- 0398US9553265B1RRAM device with data storage layer having increased heightTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 24, 2017·33 cites·20 claims
- 0497US9577009B1RRAM cell with PMOS access transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 21, 2017·29 cites·20 claims
- 0597US9425392B2RRAM cell structure with laterally offset BEVA/TEVATAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 23, 2016·13 cites·20 claims
- 0694US11706930B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 18, 2023·2 cites·20 claims
- 0794US11296099B2FeRAM decoupling capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 5, 2022·3 cites·20 claims
- 0894US10566519B2Method for forming a flat bottom electrode via (BEVA) top surface for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 18, 2020·8 cites·20 claims
- 0992US10249756B2Semiconductor device including memory and logic circuit having FETs with ferroelectric layer and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 2, 2019·9 cites·20 claims
- 1092US9780302B2Top electrode for device structures in interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 3, 2017·5 cites·20 claims
- 1192US9112148B2RRAM cell structure with laterally offset BEVA/TEVATAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 18, 2015·6 cites·20 claims
- 1291US11183503B2Memory cell having top and bottom electrodes defining recessesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 23, 2021·5 cites·20 claims
- 1389US11751485B2Flat bottom electrode via (BEVA) top surface for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 5, 2023·1 cites·20 claims
- 1489US9076522B2Memory cells breakdown protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 7, 2015·12 cites·19 claims
- 1588US11800720B2Memory cell having a top electrode interconnect arranged laterally from a recessTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 24, 2023·1 cites·20 claims
- 1688US10497436B2Memory device and fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 3, 2019·4 cites·20 claims
- 1787US9941470B2RRAM device with data storage layer having increased heightTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 10, 2018·4 cites·20 claims
- 1886US11751401B2Integrated circuit and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 5, 2023·1 cites·20 claims
- 1986US9349953B2Resistance variable memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 24, 2016·6 cites·20 claims
- 2084US2025324610A1Ferroelectric memory device with leakage barrier layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2184US2025331192A1Integrated circuit and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2284US2025048647A1FeRAM MFM STRUCTURE WITH SELECTIVE ELECTRODE ETCHTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2383US11017852B2Method of forming memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 25, 2021·2 cites·20 claims
- 2483US11004975B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 11, 2021·1 cites·20 claims
- 2582US12167611B2FeRAM MFM structure with selective electrode etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 2682US9444045B2Top electrode for device structures in interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 13, 2016·2 cites·20 claims
- 2781US10862029B2Top electrode for device structures in interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·1 cites·20 claims
- 2881US9934853B2Method and apparatus for reading RRAM cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 3, 2018·4 cites·20 claims
- 2980US12356630B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 3080US12082421B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 3, 2024·0 cites·20 claims
- 3179US9368722B2Resistive random access memory and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 14, 2016·3 cites·11 claims
- 3279US2025338503A1Trench-type beol memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3379US2024373645A1Feram decoupling capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3479US2024365561A1Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3577US12419056B2Integrated circuit and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 16, 2025·0 cites·20 claims
- 3677US11227872B2FeRAM MFM structure with selective electrode etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·1 cites·20 claims
- 3777US2025351374A1Ferroelectric memory device with blocking layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3876US11844286B2Flat bottom electrode via (BEVA) top surface for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 12, 2023·0 cites·20 claims
- 3976US10158072B1Step height reduction of memory elementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·2 cites·20 claims
- 4076US2025318142A1Interfacial layer with high texture uniformity for ferroelectric layer enhancementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4175US11785777B2FeRAM MFM structure with selective electrode etchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·0 cites·20 claims
- 4274US12432929B2Ferroelectric memory device with blocking layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 30, 2025·0 cites·20 claims
- 4374US12114509B2FeRAM decoupling capacitorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 8, 2024·0 cites·20 claims
- 4474US11723292B2RRAM cell structure with laterally offset BEVA/TEVATAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 8, 2023·0 cites·20 claims
- 4574US10199575B2RRAM cell structure with laterally offset BEVA/TEVATAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 5, 2019·1 cites·20 claims
- 4674US2024389350A1Mfm device with an enhanced bottom electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4773US11849588B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 19, 2023·0 cites·20 claims
- 4873US2024357833A1METHOD AND STRUCTURES PERTAINING TO IMPROVED FERROELECTRIC RANDOM-ACCESS MEMORY (FeRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4972US11201281B2Method for forming a flat bottom electrode via (BEVA) top surface for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 14, 2021·0 cites·20 claims
- 5072US11195840B2Method and structures pertaining to improved ferroelectric random-access memory (FeRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 7, 2021·1 cites·20 claims
Showing the top 50 of 87 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →