Inventor · disambiguated record
Shinichi Shikata
Also filed as: SHIKATA SHINICHI
35 granted patents·8 pending applications·613 citations·filing 1986–2012
98Inventor score
Files withSUMITOMO ELECTRIC INDUSTRIES25NAT INST OF ADVANCED IND SCIEN3SEIKO EPSON CORP3HIDEAKI YAMADA2KATO HIROMITSU2
Top patents by PatentIndex Score
43 records- 0189US5446329ASurface acoustic wave elementSUMITOMO ELECTRIC INDUSTRIES·Filed 1993·Granted Aug 29, 1995·52 cites·15 claims
- 0289US5401544AMethod for manufacturing a surface acoustic wave deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 1993·Granted Mar 28, 1995·48 cites·9 claims
- 0388US8940266B2Large diamond crystal substrates and methods for producing the sameHIDEAKI YAMADA·Filed 2009·Granted Jan 27, 2015·11 cites·12 claims
- 0487US5426340ASurface acoustic wave device and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 1994·Granted Jun 20, 1995·44 cites·27 claims
- 0586US5343107ASurface acoustic wave element and method of manufacturing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 1993·Granted Aug 30, 1994·35 cites·3 claims
- 0681US5500077AMethod of polishing/flattening diamondSUMITOMO ELECTRIC INDUSTRIES·Filed 1994·Granted Mar 19, 1996·33 cites·17 claims
- 0780US5390401AMethod for producing a surface acoustic wave deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 1993·Granted Feb 21, 1995·40 cites·3 claims
- 0879US8876973B2Film of n type (100) oriented single crystal diamond semiconductor doped with phosphorous atoms, and a method of producing the sameKATO HIROMITSU·Filed 2012·Granted Nov 4, 2014·4 cites·8 claims
- 0977US5497726AMethod of manufacturing a surface acoustic wave elementSUMITOMO ELECTRIC INDUSTRIES·Filed 1994·Granted Mar 12, 1996·23 cites·16 claims
- 1076US8075359B2Phosphorus-doped diamond film allowing significantly reduced electron emission voltage, method for producing the same, and electron source using the sameYAMADA TAKATOSHI·Filed 2006·Granted Dec 13, 2011·4 cites·6 claims
- 1176US6448688B2Hard carbon film and surface-acoustic-wave substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 2000·Granted Sep 10, 2002·13 cites·3 claims
- 1275US5382809ASemiconductor device including semiconductor diamondSUMITOMO ELECTRIC INDUSTRIES·Filed 1993·Granted Jan 17, 1995·54 cites·21 claims
- 1373US5294858ASurface acoustic wave deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 1993·Granted Mar 15, 1994·24 cites·4 claims
- 1472US5320865AMethod of manufacturing a surface acoustic wave deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 1992·Granted Jun 14, 1994·23 cites·16 claims
- 1570US6642813B1Surface acoustic wave device utilizing a ZnO layer and a diamond layerSUMITOMO ELECTRIC INDUSTRIES·Filed 2000·Granted Nov 4, 2003·14 cites·8 claims
- 1667US4859618AMethod of producing the gate electrode of a field effect transistorSUMITOMO ELECTRIC INDUSTRIES·Filed 1987·Granted Aug 22, 1989·32 cites·16 claims
- 1765US5235236ASurface acoustic wave deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 1992·Granted Aug 10, 1993·17 cites·12 claims
- 1864US6710513B2Surface acoustic wave device and substrate thereofSEIKO EPSON CORP·Filed 2001·Granted Mar 23, 2004·9 cites·16 claims
- 1962US5344526AMethod for etching diamondSUMITOMO ELECTRIC INDUSTRIES·Filed 1993·Granted Sep 6, 1994·30 cites·6 claims
- 2061US8237170B2Schottky diamond semiconductor device and manufacturing method for a Schottky electrode for diamond semiconductor deviceIKEDA KAZUHIRO·Filed 2008·Granted Aug 7, 2012·2 cites·14 claims
- 2161US6984918B1Saw deviceSEIKO EPSON CORP·Filed 2000·Granted Jan 10, 2006·8 cites·11 claims
- 2258US8735907B2Ohmic electrode for use in a semiconductor diamond deviceYAMADA TAKATOSHI·Filed 2010·Granted May 27, 2014·2 cites·6 claims
- 2357US6469416B1Surface acoustic wave deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2001·Granted Oct 22, 2002·7 cites·5 claims
- 2455US5624853AMethod for forming heterojunction bipolar transistorsSUMITOMO ELECTRIC INDUSTRIES·Filed 1995·Granted Apr 29, 1997·17 cites·8 claims
- 2551US7960905B2Diamond electron source having carbon-terminated structureNAT INST OF ADVANCED IND SCIEN·Filed 2006·Granted Jun 14, 2011·0 cites·4 claims
- 2650US4772489AMethod of annealing a compound semiconductor substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 1986·Granted Sep 20, 1988·16 cites·8 claims
- 2748US5814918ADiamond-ZnO surface acoustic wave deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 1996·Granted Sep 29, 1998·10 cites·10 claims
- 2848US2008199945A1Cantilever for measuring intra-cellular and inter-cellular microspacesOLYMPUS CORP·Filed 2007·Application pending·0 cites
- 2947US2012302045A1Method for producing mosaic diamondHIDEAKI YAMADA·Filed 2010·Application pending·0 cites
- 3047US2010247884A1Stacked body of isotope diamondNAT INST OF ADVANCED IND SCIEN·Filed 2008·Application pending·0 cites
- 3146US5536952AHeterojunction bipolar transistorSUMITOMO ELECTRIC INDUSTRIES·Filed 1994·Granted Jul 16, 1996·13 cites·8 claims
- 3246US2011175109A1Film of n type (100) oriented single crystal diamond semiconductor doped with phosphorous atoms, and a method of producing the sameKATO HIROMITSU·Filed 2011·Application pending·0 cites
- 3345US8349603B2Cantilever for measuring intra-cellular and inter-cellular microspacesOLYMPUS CORP·Filed 2010·Granted Jan 8, 2013·0 cites·6 claims
- 3445US2009050899A1High-output diamond semiconductor elementNAT INST OF ADVANCED IND SCINE·Filed 2008·Application pending·0 cites
- 3544US2009140263A1Method for diamond surface treatment and device using diamond thin filmUMEZAWA HITOSHI·Filed 2007·Application pending·0 cites
- 3644US2009308305A1Process for producing single-crystal substrate with off angleNAT INST OF ADVANCED IND SCIEN·Filed 2007·Application pending·0 cites
- 3743US5501909APolycrystalline diamond substrate and process for producing the sameSUMITOMO ELECTRIC INDUSTRIES·Filed 1994·Granted Mar 26, 1996·8 cites·11 claims
- 3842US6713941B2Surface acoustic wave elementSEIKO EPSON CORP·Filed 2001·Granted Mar 30, 2004·2 cites·2 claims
- 3942US2008193366A1Film of N Type (100) Oriented Single Crystal Diamond Semiconductor Doped with Phosphorous Atoms, and a Method of Producing the SameNAT INSTITUE OF ADVANCED IND S·Filed 2006·Application pending·0 cites
- 4038US5264379AMethod of making a hetero-junction bipolar transistorSUMITOMO ELECTRIC INDUSTRIES·Filed 1993·Granted Nov 23, 1993·9 cites·10 claims
- 4136US6416865B1Hard carbon film and surface acoustic-wave substrateSUMITOMO ELECTRIC INDUSTRIES·Filed 1999·Granted Jul 9, 2002·3 cites·8 claims
- 4235US5463901AStacked piezoelectric surface acoustic wave device with a boron nitride layer in the stackSUMITOMO ELECTRIC INDUSTRIES·Filed 1994·Granted Nov 7, 1995·3 cites·20 claims
- 4333US5252553AProcess for preparing a superconducting thin film of compound oxideSUMITOMO ELECTRIC INDUSTRIES·Filed 1992·Granted Oct 12, 1993·3 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →