Film of n type (100) oriented single crystal diamond semiconductor doped with phosphorous atoms, and a method of producing the same

Abstract

There is provided an n type (100) oriented single crystal diamond semiconductor film into which phosphorous atoms have been doped and a method of producing the same. The n type (100) oriented single crystal diamond semiconductor film, characterized in that (100) oriented diamond is epitaxially grown on a substrate under such conditions that; the diamond substrate is (100) oriented diamond, a means for chemical vapor deposition provides hydrogen, hydrocarbon and a phosphorous compound in the plasma vapor phase, the ratio of phosphorous atoms to carbon atoms in the plasma vapor phase is no less than 0.1%, and the ratio of carbon atoms to hydrogen atoms is no less than 0.05%, and the method of producing the same.

1 . A substrate provided with a single crystal diamond semiconductor film, comprising:
 a substrate made of a diamond semiconductor, the diamond semiconductor structured in a single crystal of (100) orientation,   an n-type diamond semiconductor film deposited on the substrate, the n-type diamond semiconductor being structured in a single crystal of (100) orientation, the n-type diamond semiconductor film containing phosphorous atoms doped in epitaxial growth of the single crystal, the epitaxial growth subject to the substrate set with an off-angle of 0.5 degrees to 10 degrees from the (100) plane of the substrate.   
     
     
         2 . The substrate provided with a single crystal diamond semiconductor film of  claim 1 , wherein the off-angle of the substrate is 5.8 degrees or less. 
     
     
         3 . The substrate provided with a single crystal diamond semiconductor film of  claim 1 , wherein the n-type single crystal diamond semiconductor film has a donor level substantially of 0.58 eV, and wherein the donor level is confirmed based on the temperature dependency of a carrier concentration according to the Hall effect measurement. 
     
     
         4 . The substrate provided with a single crystal diamond semiconductor film of  claim 1 , wherein the single crystal diamond semiconductor has an off-angle being consistent to the off-angle of the substrate.