Inventor · disambiguated record
Shigeaki Sumiya
Also filed as: SUMIYA SHIGEAKI
27 granted patents·3 pending applications·109 citations·filing 2002–2014
95Inventor score
Top patents by PatentIndex Score
30 records- 0185US8404045B2Method for manufacturing group III nitride single crystalsKURAOKA YOSHITAKA·Filed 2010·Granted Mar 26, 2013·4 cites·14 claims
- 0284US8648351B2Epitaxial substrate and method for manufacturing epitaxial substrateNGK INSULATORS LTD·Filed 2012·Granted Feb 11, 2014·6 cites·4 claims
- 0383US9090993B2Epitaxial substrate comprising a superlattice group and method for manufacturing the epitaxial substrateMIYOSHI MAKOTO·Filed 2012·Granted Jul 28, 2015·6 cites·6 claims
- 0483US7687824B2Method of improving surface flatness of group-III nitride crystal, substrate for epitaxial growth, and semiconductor deviceNGK INSULATORS LTD·Filed 2005·Granted Mar 30, 2010·8 cites·11 claims
- 0581US8378386B2Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor deviceNGK INSULATORS LTD·Filed 2010·Granted Feb 19, 2013·6 cites·13 claims
- 0678US8946723B2Epitaxial substrate and method for manufacturing epitaxial substrateNGK INSULATORS LTD·Filed 2012·Granted Feb 3, 2015·4 cites·16 claims
- 0778US8471265B2Epitaxial substrate with intermediate layers for reinforcing compressive strain in laminated composition layers and manufacturing method thereofMIYOSHI MAKOTO·Filed 2012·Granted Jun 25, 2013·4 cites·20 claims
- 0878US8415690B2Epitaxial substrate for semiconductor element, semiconductor element, and method for producing epitaxial substrate for semiconductor elementMIYOSHI MAKOTO·Filed 2012·Granted Apr 9, 2013·4 cites·29 claims
- 0978US8410552B2Epitaxial substrate for semiconductor device, semiconductor device, and method of manufacturing epitaxial substrate for semiconductor deviceMIYOSHI MAKOTO·Filed 2010·Granted Apr 2, 2013·5 cites·13 claims
- 1076US6869702B2Substrate for epitaxial growthNGK INSULATORS LTD·Filed 2003·Granted Mar 22, 2005·17 cites·10 claims
- 1174US7632741B2Method for forming AlGaN crystal layerNGK INSULATORS LTD·Filed 2008·Granted Dec 15, 2009·4 cites·16 claims
- 1269US9478650B2Semiconductor device, HEMT device, and method of manufacturing semiconductor deviceNGK INSULATORS LTD·Filed 2013·Granted Oct 25, 2016·2 cites·22 claims
- 1368US6770914B2III nitride semiconductor substrate for ELONGK INSULATORS LTD·Filed 2002·Granted Aug 3, 2004·11 cites·15 claims
- 1463US7771849B2Method of reducing dislocations in group III nitride crystal, and substrate for epitaxial growthNGK INSULATORS LTD·Filed 2009·Granted Aug 10, 2010·1 cites·6 claims
- 1563US6597023B2Semiconductor light-detecting elementNGK INSULATORS LTD·Filed 2002·Granted Jul 22, 2003·8 cites·13 claims
- 1662US7982241B2Epitaxial substrate, semiconductor device substrate, and HEMT deviceNGK INSULATORS LTD·Filed 2009·Granted Jul 19, 2011·1 cites·17 claims
- 1762US7713847B2Method for forming AlGaN crystal layerNGK INSULATORS LTD·Filed 2008·Granted May 11, 2010·1 cites·9 claims
- 1862US6765244B2III nitride film and a III nitride multilayerNGK INSULATORS LTD·Filed 2002·Granted Jul 20, 2004·7 cites·12 claims
- 1961US8890208B2Group III nitride epitaxial substrate for semiconductor device, semiconductor device, and process for producing group III nitride epitaxial substrate for semiconductor deviceMIYOSHI MAKOTO·Filed 2010·Granted Nov 18, 2014·1 cites·14 claims
- 2057US8853828B2Epitaxial substrate for semiconductor device, method for manufacturing epitaxial substrate for semiconductor device, and semiconductor deviceSUMIYA SHIGEAKI·Filed 2012·Granted Oct 7, 2014·1 cites·20 claims
- 2155US6749957B2Method for fabricating a III nitride film, substrate for epitaxial growth, III nitride film, epitaxial growth substrate for III nitride element and III nitride elementNGK INSULATORS LTD·Filed 2002·Granted Jun 15, 2004·4 cites·16 claims
- 2253US6703255B2Method for fabricating a III nitride filmNGK INSULATORS LTD·Filed 2002·Granted Mar 9, 2004·3 cites·17 claims
- 2347US6844611B2III nitride epitaxial substrate, epitaxial substrate for III nitride element, and III nitride element that includes a surface nitride layer formed on the main surface of a sapphire single crystalNGK INSULATORS LTD·Filed 2002·Granted Jan 18, 2005·1 cites·13 claims
- 2444US8969880B2Epitaxial substrate and method for manufacturing epitaxial substrateNGK INSULATORS LTD·Filed 2012·Granted Mar 3, 2015·0 cites·23 claims
- 2544US2014361337A1Semiconductor Device and Method for Manufacturing Semiconductor DeviceNGK INSULATORS LTD·Filed 2014·Application pending·0 cites
- 2642US8598626B2Epitaxial substrate for semiconductor device, schottky junction structure, and leakage current suppression method for schottky junction structureMIYOSHI MAKOTO·Filed 2010·Granted Dec 3, 2013·0 cites·7 claims
- 2742US6805982B2Epitaxial substrates and semiconductor devicesNGK INSULATORS LTD·Filed 2003·Granted Oct 19, 2004·0 cites·7 claims
- 2842US2007045662A1Substrate for film growth of group iii nitrides, method of manufacturing the same, and semiconductor device using the sameNGK INSULATORS LTD·Filed 2006·Application pending·0 cites
- 2938US2012168771A1Semiconductor element, hemt element, and method of manufacturing semiconductor elementMIYOSHI MAKOTO·Filed 2012·Application pending·0 cites
- 3037US8872226B2Group III nitride epitaxial substrate for semiconductor device, semiconductor device, and process for producing group III nitride epitaxial substrate for semiconductor deviceMIYOSHI MAKOTO·Filed 2010·Granted Oct 28, 2014·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →