Inventor · disambiguated record
Shi-Chung Sun
Also filed as: SUN SHI · SUN SHI-CHUNG
11 granted patents·3 pending applications·852 citations·filing 1996–2023
93Inventor score
Files withTAIWAN SEMICONDUCTOR MFG6UNITED MICROELECTRONICS CORP4CONAGEN INC1MACRONIX INT CO LTD1PROMOS TECHNOLOGIES INC1
Top patents by PatentIndex Score
14 records- 0196US6171900B1CVD Ta2O5/oxynitride stacked gate insulator with TiN gate electrode for sub-quarter micron MOSFETTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jan 9, 2001·210 cites·22 claims
- 0295US5880040AGate dielectric based on oxynitride grown in N2 O and annealed in NOMACRONIX INT CO LTD·Filed 1996·Granted Mar 9, 1999·285 cites·26 claims
- 0386US6359160B1MOCVD molybdenum nitride diffusion barrier for CU metallizationTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Mar 19, 2002·39 cites·4 claims
- 0486US5930584AProcess for fabricating low leakage current electrode for LPCVD titanium oxide filmsUNITED MICROELECTRONICS CORP·Filed 1996·Granted Jul 27, 1999·86 cites·23 claims
- 0583US5668054AProcess for fabricating tantalum nitride diffusion barrier for copper matallizationUNITED MICROELECTRONICS CORP·Filed 1996·Granted Sep 16, 1997·77 cites·8 claims
- 0676US5841186AComposite dielectric filmsUNITED MICROELECTRONICS CORP·Filed 1997·Granted Nov 24, 1998·37 cites·8 claims
- 0771US6150209ALeakage current reduction of a tantalum oxide layer via a nitrous oxide high density annealing procedureTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Nov 21, 2000·49 cites·16 claims
- 0869US5652166AProcess for fabricating dual-gate CMOS having in-situ nitrogen-doped polysilicon by rapid thermal chemical vapor depositionUNITED MICROELECTRONICS CORP·Filed 1996·Granted Jul 29, 1997·31 cites·7 claims
- 0967US6624073B2Optimized TaCN thin film diffusion barrier for copper metallizationPROMOS TECHNOLOGIES INC·Filed 2001·Granted Sep 23, 2003·11 cites·17 claims
- 1065US2024301462A1Biosynthetic production of steviol glycosidesCONAGEN INC·Filed 2023·Application pending·0 cites
- 1158US6114242AMOCVD molybdenum nitride diffusion barrier for Cu metallizationTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Sep 5, 2000·21 cites·31 claims
- 1256US6294819B1CVD Ta2O5/oxynitride stacked gate insulator with TiN gate electrode for sub-quarter micron MOSFETTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Sep 25, 2001·6 cites·7 claims
- 1337US2002192932A1Salicide integration processTAIWAN SEMICONDUCTOR MFG·Filed 2002·Application pending·0 cites
- 1436US2003141560A1Incorporating TCS-SiN barrier layer in dual gate CMOS devicesFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →