Inventor · disambiguated record
Shih-Wei Sun
Also filed as: SUN SHIH W · SUN SHIH-WEI
75 granted patents·10 pending applications·3,730 citations·filing 1988–2023
99Inventor score
Files withUNITED MICROELECTRONICS CORP49MOTOROLA INC20CHEN JEI-MING1LIU CHIH-CHIEN1MEDIATEK SINGAPORE PTE LTD1
Top patents by PatentIndex Score
85 records- 0197US6203863B1Method of gap fillingUNITED MICROELECTRONICS CORP·Filed 1998·Granted Mar 20, 2001·318 cites·20 claims
- 0296US5968610AMulti-step high density plasma chemical vapor deposition processUNITED MICROELECTRONICS CORP·Filed 1997·Granted Oct 19, 1999·371 cites·22 claims
- 0396US5811283ASilicon on insulator (SOI) dram cell structure and processUNITED MICROELECTRONICS CORP·Filed 1996·Granted Sep 22, 1998·178 cites·6 claims
- 0495US8062536B2High density plasma chemical vapor deposition processLIU CHIH-CHIEN·Filed 2010·Granted Nov 22, 2011·20 cites·12 claims
- 0595US5552332AProcess for fabricating a MOSFET device having reduced reverse short channel effectsMOTOROLA INC·Filed 1995·Granted Sep 3, 1996·160 cites·19 claims
- 0694US5801094ADual damascene processUNITED MICROELECTRONICS CORP·Filed 1997·Granted Sep 1, 1998·178 cites·12 claims
- 0792US6492732B2Interconnect structure with air gap compatible with unlanded viasUNITED MICROELECTRONICS CORP·Filed 2001·Granted Dec 10, 2002·66 cites·74 claims
- 0892US6010931APlanarization technique for DRAM cell capacitor electrodeUNITED MICROELECTRONICS CORP·Filed 1997·Granted Jan 4, 2000·88 cites·28 claims
- 0992US5399507AFabrication of mixed thin-film and bulk semiconductor substrate for integrated circuit applicationsMOTOROLA INC·Filed 1994·Granted Mar 21, 1995·94 cites·13 claims
- 1091US4994410AMethod for device metallization by forming a contact plug and interconnect using a silicide/nitride processMOTOROLA INC·Filed 1990·Granted Feb 19, 1991·153 cites·4 claims
- 1190US6492256B2Method for forming an interconnect structure with air gap compatible with unlanded viasUNITED MICROELECTRONICS CORP·Filed 2002·Granted Dec 10, 2002·56 cites·12 claims
- 1289US4926237ADevice metallization, device and methodMOTOROLA INC·Filed 1988·Granted May 15, 1990·89 cites·18 claims
- 1388US5998251AProcess and structure for embedded DRAMUNITED MICROELECTRONICS CORP·Filed 1997·Granted Dec 7, 1999·68 cites·44 claims
- 1488US5899742AManufacturing method for self-aligned local interconnects and contacts simultaneouslyFiled 1998·Granted May 4, 1999·102 cites·12 claims
- 1588US5262353AProcess for forming a structure which electrically shields conductorsMOTOROLA INC·Filed 1992·Granted Nov 16, 1993·97 cites·13 claims
- 1687US5708288AThin film silicon on insulator semiconductor integrated circuit with electrostatic damage protection and methodMOTOROLA INC·Filed 1995·Granted Jan 13, 1998·74 cites·20 claims
- 1786US6265780B1Dual damascene structure for the wiring-line structures of multi-level interconnects in integrated circuitUNITED MICROELECTRONICS CORP·Filed 1998·Granted Jul 24, 2001·65 cites·11 claims
- 1886US5381040ASmall geometry contactMOTOROLA INC·Filed 1993·Granted Jan 10, 1995·80 cites·17 claims
- 1985US5960299AMethod of fabricating a shallow-trench isolation structure in integrated circuitUNITED MICROELECTRONICS CORP·Filed 1998·Granted Sep 28, 1999·77 cites·11 claims
- 2085US5920779ADifferential gate oxide thickness by nitrogen implantation for mixed mode and embedded VLSI circuitsUNITED MICROELECTRONICS CORP·Filed 1997·Granted Jul 6, 1999·52 cites·9 claims
- 2185US5753559AMethod for growing hemispherical grain siliconUNITED MICROELECTRONICS CORP·Filed 1996·Granted May 19, 1998·59 cites·22 claims
- 2284US7271101B2High density plasma chemical vapor deposition processUNITED MICROELECTRONICS CORP·Filed 2005·Granted Sep 18, 2007·6 cites·32 claims
- 2384US5406111AProtection device for an intergrated circuit and method of formationMOTOROLA INC·Filed 1994·Granted Apr 11, 1995·58 cites·25 claims
- 2483US6350672B1Interconnect structure with gas dielectric compatible with unlanded viasUNITED MICROELECTRONICS CORP·Filed 1997·Granted Feb 26, 2002·61 cites·42 claims
- 2582US6117345AHigh density plasma chemical vapor deposition processUNITED MICROELECTRONICS CORP·Filed 1997·Granted Sep 12, 2000·44 cites·21 claims
- 2682US5874353AMethod of forming a self-aligned silicide deviceUNITED MICROELECTRONICS CORP·Filed 1997·Granted Feb 23, 1999·52 cites·16 claims
- 2781US4897364AMethod for locos isolation using a framed oxidation mask and a polysilicon buffer layerMOTOROLA INC·Filed 1989·Granted Jan 30, 1990·57 cites·10 claims
- 2880US5744841ASemiconductor device with ESD protectionMOTOROLA INC·Filed 1997·Granted Apr 28, 1998·41 cites·23 claims
- 2979US5545574AProcess for forming a semiconductor device having a metal-semiconductor compoundMOTOROLA INC·Filed 1995·Granted Aug 13, 1996·47 cites·28 claims
- 3079US5345105AStructure for shielding conductorsMOTOROLA INC·Filed 1993·Granted Sep 6, 1994·56 cites·18 claims
- 3176US6143601AMethod of fabricating DRAMUNITED MICROELECTRONICS CORP·Filed 1998·Granted Nov 7, 2000·47 cites·18 claims
- 3275US5930618AMethod of Making High-K Dielectrics for embedded DRAMSUNITED MICROELECTRONICS CORP·Filed 1997·Granted Jul 27, 1999·32 cites·28 claims
- 3374US5670387AProcess for forming semiconductor-on-insulator deviceMOTOROLA INC·Filed 1995·Granted Sep 23, 1997·46 cites·24 claims
- 3474US5605855AProcess for fabricating a graded-channel MOS deviceMOTOROLA INC·Filed 1995·Granted Feb 25, 1997·50 cites·9 claims
- 3574US5279990AMethod of making a small geometry contact using sidewall spacersMOTOROLA INC·Filed 1993·Granted Jan 18, 1994·43 cites·15 claims
- 3672US6114200AMethod of fabricating a dynamic random access memory deviceUNITED MICROELECTRONICS CORP·Filed 1997·Granted Sep 5, 2000·32 cites·24 claims
- 3772US6017792AProcess for fabricating a semiconductor device including a nonvolatile memory cellMOTOROLA INC·Filed 1996·Granted Jan 25, 2000·35 cites·6 claims
- 3872US5886375ASRAM having improved soft-error immunityUNITED MICROELECTRONICS CORP·Filed 1996·Granted Mar 23, 1999·42 cites·18 claims
- 3970US5780348AMethod of making a self-aligned silicide componentUNITED MICROELECTRONICS CORP·Filed 1997·Granted Jul 14, 1998·31 cites·15 claims
- 4069US7615434B2CMOS device and fabricating method thereofUNITED MICROELECTRONICS CORP·Filed 2006·Granted Nov 10, 2009·4 cites·10 claims
- 4168US5034351AProcess for forming a feature on a substrate without recessing the surface of the substrateMOTOROLA INC·Filed 1990·Granted Jul 23, 1991·45 cites·10 claims
- 4266US6200629B1Method of manufacturing multi-layer metal capacitorUNITED MICROELECTRONICS CORP·Filed 1999·Granted Mar 13, 2001·32 cites·9 claims
- 4366US6025264AFabricating method of a barrier layerUNITED MICROELECTRONICS CORP·Filed 1998·Granted Feb 15, 2000·32 cites·23 claims
- 4465US5733794AProcess for forming a semiconductor device with ESD protectionMOTOROLA INC·Filed 1995·Granted Mar 31, 1998·22 cites·20 claims
- 4563US7078346B2High density plasma chemical vapor deposition processUNITED MICROELECTRONICS CORP·Filed 2004·Granted Jul 18, 2006·5 cites·32 claims
- 4663US6153459AMethod of fabricating dual gate structure of embedded DRAMUNITED MICROELECTRONICS CORP·Filed 1998·Granted Nov 28, 2000·19 cites·16 claims
- 4763US6008100AMetal-oxide semiconductor field effect transistor device fabrication processUNITED MICROELECTRONICS CORP·Filed 1998·Granted Dec 28, 1999·27 cites·24 claims
- 4862US6198617B1Multi-layer metal capacitorUNITED MICROELECTRONICS CORP·Filed 1999·Granted Mar 6, 2001·28 cites·4 claims
- 4962US6100205AIntermetal dielectric layer formation with low dielectric constant using high density plasma chemical vapor deposition processUNITED MICROELECTRONICS CORP·Filed 1997·Granted Aug 8, 2000·27 cites·35 claims
- 5062US6020258AMethod for unlanded via etching using etch stopFiled 1997·Granted Feb 1, 2000·26 cites·13 claims
Showing the top 50 of 85 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →