Inventor · disambiguated record
Shyh-Fann Ting
Also filed as: TING SHYH-FANN
103 granted patents·38 pending applications·448 citations·filing 2001–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD85UNITED MICROELECTRONICS CORP28TAIWAN SEMICONDUCTOR MFG6TING SHYH-FANN6HUNG WEN-HAN4
Top patents by PatentIndex Score
141 records- 0198US9437645B1Composite grid structure to reduce cross talk in back side illumination image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 6, 2016·27 cites·20 claims
- 0295US11227889B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·3 cites·20 claims
- 0395US10658410B2Image sensor having improved full well capacity and related method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 19, 2020·9 cites·20 claims
- 0495US10276618B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·8 cites·20 claims
- 0595US7288822B1Semiconductor structure and fabricating method thereofUNITED MICROELECTRONICS CORP·Filed 2006·Granted Oct 30, 2007·48 cites·14 claims
- 0694US8866250B2Multiple metal film stack in BSI chipsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 21, 2014·11 cites·20 claims
- 0793US11545513B2Image sensor having improved full well capacity and related method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 3, 2023·2 cites·20 claims
- 0893US11430823B2Method for manufacturing semiconductor image sensor device having deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·2 cites·20 claims
- 0993US11404460B2Vertical gate field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·3 cites·20 claims
- 1093US11222915B2Pad structure for front side illuminated image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 11, 2022·7 cites·20 claims
- 1193US10943940B2Image sensor comprising reflective guide layer and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·5 cites·20 claims
- 1293US9954022B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 24, 2018·7 cites·20 claims
- 1393US9659981B2Backside illuminated image sensor with negatively charged layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 23, 2017·9 cites·20 claims
- 1493US9564468B2Composite grid structure to reduce crosstalk in back side illumination image sensorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 7, 2017·10 cites·20 claims
- 1592US10825853B2Semiconductor image sensor device with deep trench isolations and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 3, 2020·3 cites·20 claims
- 1692US10269857B2Image sensor comprising reflective guide layer and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·5 cites·20 claims
- 1792US9728570B2Deep trench isolation fabrication for BSI image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 8, 2017·7 cites·20 claims
- 1892US9666566B13DIC structure and method for hybrid bonding semiconductor wafersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 30, 2017·9 cites·20 claims
- 1991US12310137B2Isolation structure to increase image sensor performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 20, 2025·1 cites·20 claims
- 2091US7700450B2Method for forming MOS transistorUNITED MICROELECTRONICS CORP·Filed 2006·Granted Apr 20, 2010·18 cites·45 claims
- 2191US7342284B2Semiconductor MOS transistor device and method for making the sameUNITED MICROELECTRONICS CORP·Filed 2006·Granted Mar 11, 2008·16 cites·25 claims
- 2290US11088196B2Metal reflector grounding for noise reduction in light detectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·2 cites·20 claims
- 2389US12490537B2Image sensor having an improved structure for small pixel designsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 2, 2025·1 cites·20 claims
- 2489US10014340B2Stacked SPAD image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 3, 2018·7 cites·20 claims
- 2589US2025351596A1Vertical gate field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2688US8796805B2Multiple metal film stack in BSI chipsTING SHYH-FANN·Filed 2012·Granted Aug 5, 2014·11 cites·20 claims
- 2788US7524716B2Fabricating method of semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2007·Granted Apr 28, 2009·16 cites·8 claims
- 2887US9425343B2Mechanisms for forming image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 23, 2016·4 cites·22 claims
- 2987US7622344B2Method of manufacturing complementary metal oxide semiconductor transistorsUNITED MICROELECTRONICS CORP·Filed 2007·Granted Nov 24, 2009·14 cites·22 claims
- 3087US7410875B2Semiconductor structure and fabrication thereofUNITED MICROELECTRONICS CORP·Filed 2006·Granted Aug 12, 2008·12 cites·21 claims
- 3186US12211876B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
- 3286US2025318303A1Semiconductor device including image sensor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3385US12464839B2Vertical gate field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
- 3485US10510789B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 17, 2019·2 cites·20 claims
- 3585US9812483B2Back-side illuminated (BSI) image sensor with global shutter schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 7, 2017·4 cites·20 claims
- 3685US8390073B2Transistor structureHUNG WEN-HAN·Filed 2012·Granted Mar 5, 2013·6 cites·8 claims
- 3785US7745847B2Metal oxide semiconductor transistorUNITED MICROELECTRONICS CORP·Filed 2007·Granted Jun 29, 2010·11 cites·11 claims
- 3885US7618856B2Method for fabricating strained-silicon CMOS transistorsUNITED MICROELECTRONICS CORP·Filed 2006·Granted Nov 17, 2009·13 cites·21 claims
- 3984US10777590B2Method for forming image sensor device structure with doping layer in light-sensing regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 15, 2020·1 cites·20 claims
- 4083US2025366223A1Image sensor with extension padTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4183US2024379711A1Semiconductor device including image sensor and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4282US6877385B2Contact type micro piezoresistive shear-stress sensorNAT SCIENCE COUNCIL·Filed 2001·Granted Apr 12, 2005·32 cites·5 claims
- 4381US10971534B2Image sensor having improved full well capacity and related method of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 6, 2021·1 cites·20 claims
- 4481US10868050B2Backside illuminated image sensor with negatively charged layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 15, 2020·1 cites·20 claims
- 4581US9627326B2Method for forming alignment marks and structure of sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 18, 2017·2 cites·20 claims
- 4681US8183640B2Method of fabricating transistors and a transistor structure for improving short channel effect and drain induced barrier loweringHUNG WEN-HAN·Filed 2009·Granted May 22, 2012·6 cites·9 claims
- 4781US2025344539A1Image sensor having an improved structure for small pixel designsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4880US7014710B2Method of growing single crystal Gallium Nitride on silicon substrateUNIV NAT CHENG KUNG·Filed 2003·Granted Mar 21, 2006·21 cites·21 claims
- 4979US11728366B2Extra doped region for back-side deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
- 5078US12154927B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 26, 2024·0 cites·20 claims
Showing the top 50 of 141 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →