Inventor · disambiguated record
Shigetaka Tomiya
Also filed as: TOMIYA SHIGETAKA
21 granted patents·6 pending applications·279 citations·filing 1993–2018
95Inventor score
Top patents by PatentIndex Score
27 records- 0198US8361924B2Fine particles of core-shell structure and functional device incorporated therewithSONY CORP·Filed 2011·Granted Jan 29, 2013·33 cites·10 claims
- 0293US6891268B2Nitride semiconductor laserSONY CORP·Filed 2002·Granted May 10, 2005·36 cites·22 claims
- 0391US6576533B2Method of forming semiconductor thin film of group III nitride compound semiconductor.SONY CORP·Filed 2002·Granted Jun 10, 2003·64 cites·49 claims
- 0489US7091056B2Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2005·Granted Aug 15, 2006·12 cites·12 claims
- 0586US7754504B2Light-emitting diode, method for making light-emitting diode, integrated light-emitting diode and method for making integrated light-emitting diode, method for growing a nitride-based III-V group compound semiconductor, light source cell unit, light-emitting diodeSONY CORP·Filed 2006·Granted Jul 13, 2010·14 cites·13 claims
- 0681US7135772B2Nitride semiconductor laserSONY CORP·Filed 2005·Granted Nov 14, 2006·5 cites·1 claims
- 0779US10868342B2Charge and discharge control device, charge and discharge control method, battery pack, electronic equipment, electric vehicle, power tool and power storage systemMURATA MANUFACTURING CO·Filed 2018·Granted Dec 15, 2020·4 cites·13 claims
- 0878US9911894B2Nitride-based III-V group compound semiconductorSONY CORP·Filed 2015·Granted Mar 6, 2018·2 cites·18 claims
- 0974US6667252B2Method of manufacturing compound semiconductor substrateSONY CORP·Filed 2002·Granted Dec 23, 2003·16 cites·5 claims
- 1070US10411307B2Secondary battery, evaluation method and production method therefor, and charge-discharge control deviceSONY CORP·Filed 2016·Granted Sep 10, 2019·2 cites·8 claims
- 1170US8859401B2Method for growing a nitride-based III-V group compound semiconductorOHMAE AKIRA·Filed 2011·Granted Oct 14, 2014·2 cites·14 claims
- 1270US6577662B1Semiconductor laser, and manufacturing method thereof, semiconductor device and manufacturing method thereofSONY CORP·Filed 2000·Granted Jun 10, 2003·9 cites·12 claims
- 1367US7176499B2Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and deviceSUMITOMO ELECTRIC INDUSTRIES·Filed 2003·Granted Feb 13, 2007·8 cites·17 claims
- 1461US9034738B2Method for growing a nitride-based III-V Group compound semiconductorOHMAE AKIRA·Filed 2006·Granted May 19, 2015·1 cites·15 claims
- 1558US5418374ASemiconductor device having an active layer with regions with different bandgapsSONY CORP·Filed 1993·Granted May 23, 1995·18 cites·14 claims
- 1653US2007117357A1Method of manufacturing a semiconductor light emitting device, semiconductor light emitting device, method of manufacturing a semiconductor device, semiconductor device, method of manufacturing a device, and deviceASATSUMA TSUNENORI·Filed 2007·Application pending·0 cites
- 1752US6069367ASemiconductor element and semiconductor light-emitting and semiconductor photoreceptor devicesSONY CORP·Filed 1999·Granted May 30, 2000·13 cites·3 claims
- 1851US5665977ASemiconductor light emitting device with defect decomposing and blocking layersSONY CORP·Filed 1996·Granted Sep 9, 1997·14 cites·6 claims
- 1949US2005167836A1Detailed description of the presently preferred embodimentsSONY CORP·Filed 2005·Application pending·0 cites
- 2048US6682991B1Growth method of a nitride III-V compound semiconductor, manufacturing method of a semiconductor device, and semiconductor deviceSONY CORP·Filed 1999·Granted Jan 27, 2004·14 cites·31 claims
- 2144US2010308349A1Light-emitting diode, method for making light-emitting diode, integrated light-emitting diode and method for making integrated light-emitting diode, method for growing a nitride-based iii-v group compound semiconductor, light source cell unit, light-emitting diode backlight, and light-emitting diode display and electronic deviceSONY CORP·Filed 2010·Application pending·0 cites
- 2242US5828086ASemiconductor light emitting device with a Mg superlattice structureSONY CORP·Filed 1997·Granted Oct 27, 1998·8 cites·6 claims
- 2341US9871349B2Light-emitting elementSONY CORP·Filed 2014·Granted Jan 16, 2018·0 cites·20 claims
- 2440US2008217632A1Gan-Based III-V Compound Semiconductor Light-Emitting Element and Method for Manufacturing ThereofTOMIYA SHIGETAKA·Filed 2004·Application pending·0 cites
- 2536US2013022070A1Semiconductor laser device and manufacturing method thereofSONY CORP·Filed 2011·Application pending·0 cites
- 2632US2013143357A1Method of forming organic thin film and organic thin film forming apparatus, as well as method of manufacturing organic deviceGOTO OSAMU·Filed 2011·Application pending·0 cites
- 2730US5766345AEpitaxial growth method of semiconductorSONY CORP·Filed 1995·Granted Jun 16, 1998·4 cites·8 claims
Join the waitlist — get patent alerts
Get an alert when Shigetaka Tomiya files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →