Light-emitting diode, method for making light-emitting diode, integrated light-emitting diode and method for making integrated light-emitting diode, method for growing a nitride-based iii-v group compound semiconductor, light source cell unit, light-emitting diode backlight, and light-emitting diode display and electronic device

Abstract

A light-emitting diode with (a) a substrate having at least one recessed portion on one main surface; (b) a sixth nitride-based III-V group compound semiconductor layer grown on the substrate without forming a space in the recessed portion; and (c) a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type formed over the sixth nitride-based III-V group compound semiconductor layer, wherein, a dislocation occurring, in the sixth nitride-based III-V group compound semiconductor layer, from an interface with a bottom surface of the recessed portion in a direction vertical to the one main surface arrives at an inclined face or its vicinity of a triangle having the bottom surface of the recessed portion as a base and bends in a direction parallel to the one main surface.

1 . A light-emitting diode, comprising:
 a substrate having at least one recessed portion on one main surface;   a sixth nitride-based III-V group compound semiconductor layer grown on the substrate without forming a space in the recessed portion; and   a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type formed over the sixth nitride-based III-V group compound semiconductor layer,   wherein,
 a dislocation occurring, in the sixth nitride-based III-V group compound semiconductor layer, from an interface with a bottom surface of the recessed portion in a direction vertical to the one main surface arrives at an inclined face or its vicinity of a triangle having the bottom surface of the recessed portion as a base and bends in a direction parallel to the one main surface. 
   
     
     
         2 . A light-emitting diode, comprising:
 a substrate having at least one recessed portion on one main surface;   a sixth nitride-based III-V group compound semiconductor layer grown on the substrate without forming a space in the recessed portion; and   a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type formed over the sixth nitride-based III-V group compound semiconductor layer,   wherein,   a first pit having a first width is formed in the substrate at a bottom of the recessed portion and a second pit having a second width larger than the first width is formed in the substrate at a bottom of the recessed portion.   
     
     
         3 . An integrated light-emitting diode having a plurality of light-emitting diodes integrated, at least one light-emitting diode comprising:
 a substrate having at least one recessed portion on one main surface;   a sixth nitride-based III-V group compound semiconductor layer grown on the substrate without forming a space in the recessed portion; and   a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type formed over the sixth nitride-based III-V group compound semiconductor layer,   wherein,
 a dislocation occurring, in the sixth nitride-based III-V group compound semiconductor layer, from an interface with a bottom surface of the recessed portion in a direction vertical to the one main surface arrives at an inclined face or its vicinity of a triangle having the bottom surface of the recessed portion as a base and bends in a direction parallel to the one main surface. 
   
     
     
         4 . A light source cell unit which comprises a printed circuit board and a plurality of cells formed on the printed circuit board, each cell containing at least one red light-emitting diode, at least one green light-emitting diode and at least one blue light-emitting diode, at least one of the red light-emitting diode, the green light-emitting diode and the blue light-emitting diode including:
 a substrate having at least one recessed portion on one main surface;   a sixth nitride-based III-V group compound semiconductor layer grown on the substrate without forming a space in the recessed portion; and   a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type formed over the sixth nitride-based III-V group compound semiconductor layer,   wherein,
 a dislocation occurring from an interface with a bottom surface of the recessed portion in a direction vertical to the one main surface in the sixth nitride-based III-V group compound semiconductor layer arrives at an inclined face or its vicinity of a triangle having the bottom surface of the recessed portion as a base and bends in a direction parallel to the one main surface. 
   
     
     
         5 . A light-emitting diode backlight which comprises plural red light-emitting diode, plural green light-emitting diode and plural blue light-emitting diode arranged in pattern, at least one of the red light-emitting diode, the green light-emitting diode and the blue light-emitting diode including:
 a substrate having at least one recessed portion on one main surface;   a sixth nitride-based III-V group compound semiconductor layer grown on the substrate without forming a space in the recessed portion; and   a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type formed over the sixth nitride-based III-V group compound semiconductor layer,   wherein,
 a dislocation occurring, in the sixth nitride-based III-V group compound semiconductor layer, from an interface with a bottom surface of the recessed portion in a direction vertical to the one main surface arrives at an inclined face or its vicinity of a triangle having the bottom surface of the recessed portion as a base and bends in a direction parallel to the one main surface. 
   
     
     
         6 . A light-emitting diode display which comprises plural red light-emitting diodes, plural green light-emitting diodes and plural blue light-emitting diodes arranged in pattern, at least one of the red light-emitting diode, the green light-emitting diode and the blue light-emitting diode including:
 a substrate having at least one recessed portion on one main surface;   a sixth nitride-based III-V group compound semiconductor layer grown on the substrate without forming a space in the recessed portion; and   a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type formed over the sixth nitride-based III-V group compound semiconductor layer,   wherein,
 a dislocation occurring, in the sixth nitride-based III-V group compound semiconductor layer, from an interface with a bottom surface of the recessed portion in a direction vertical to the one main surface arrives at an inclined face or its vicinity of a triangle having the bottom surface of the recessed portion as a 
   base and bends in a direction parallel to the one main surface.   
     
     
         7 . An electronic device having at least one light-emitting diode, at least the one light-emitting diode comprising:
 a substrate having at least one recessed portion on one main surface;   a sixth nitride-based III-V group compound semiconductor layer grown on the substrate without forming a space in the recessed portion; and   a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type formed over the sixth nitride-based III-V group compound semiconductor layer,   wherein,
 a dislocation occurring, in the sixth nitride-based III-V group compound semiconductor layer, from an interface with a bottom surface of the recessed portion in a direction vertical to the one main surface arrives at an inclined face or its vicinity of a triangle having the bottom surface of the recessed portion as a base and bends in a direction parallel to the one main surface.