Inventor · disambiguated record
Shane J. Trapp
Also filed as: TRAPP SHANE · TRAPP SHANE J
21 granted patents·5 pending applications·303 citations·filing 2000–2020
95Inventor score
Top patents by PatentIndex Score
26 records- 0193US6451705B1Self-aligned PECVD etch maskMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 17, 2002·66 cites·101 claims
- 0292US6569774B1Method to eliminate striations and surface roughness caused by dry etchMICRON TECHNOLOGY INC·Filed 2000·Granted May 27, 2003·63 cites·36 claims
- 0391US8624300B2Contact integration for three-dimensional stacking semiconductor devicesTANG SANH D·Filed 2010·Granted Jan 7, 2014·13 cites·12 claims
- 0491US6630410B2Self-aligned PECVD etch maskMICRON TECHNOLOGY INC·Filed 2002·Granted Oct 7, 2003·48 cites·63 claims
- 0588US11672118B2Electronic devices comprising adjoining oxide materials and related systemsMICRON TECHNOLOGY INC·Filed 2020·Granted Jun 6, 2023·2 cites·17 claims
- 0688US7153779B2Method to eliminate striations and surface roughness caused by dry etchMICRON TECHNOLOGY INC·Filed 2003·Granted Dec 26, 2006·40 cites·63 claims
- 0784US8889559B2Methods of forming a pattern on a substrateMICRON TECHNOLOGY INC·Filed 2012·Granted Nov 18, 2014·6 cites·27 claims
- 0884US6897120B2Method of forming integrated circuitry and method of forming shallow trench isolation in a semiconductor substrateMICRON TECHNOLOGY INC·Filed 2001·Granted May 24, 2005·35 cites·7 claims
- 0979US9679852B2Semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2014·Granted Jun 13, 2017·4 cites·7 claims
- 1079US7344975B2Method to reduce charge buildup during high aspect ratio contact etchMICRON TECHNOLOGY INC·Filed 2005·Granted Mar 18, 2008·5 cites·41 claims
- 1173US8673787B2Method to reduce charge buildup during high aspect ratio contact etchSANDHU GURTEJ S·Filed 2011·Granted Mar 18, 2014·2 cites·18 claims
- 1269US9984977B2Semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2017·Granted May 29, 2018·1 cites·20 claims
- 1369US7985692B2Method to reduce charge buildup during high aspect ratio contact etchMICRON TECHNOLOGY INC·Filed 2008·Granted Jul 26, 2011·2 cites·24 claims
- 1468US7202171B2Method for forming a contact opening in a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2001·Granted Apr 10, 2007·9 cites·17 claims
- 1565US8999852B2Substrate mask patterns, methods of forming a structure on a substrate, methods of forming a square lattice pattern from an oblique lattice pattern, and methods of forming a pattern on a substrateMICRON TECHNOLOGY INC·Filed 2012·Granted Apr 7, 2015·1 cites·37 claims
- 1662US7419913B2Methods of forming openings into dielectric materialMICRON TECHNOLOGY INC·Filed 2005·Granted Sep 2, 2008·1 cites·38 claims
- 1761US8889558B2Methods of forming a pattern on a substrateMICRON TECHNOLOGY INC·Filed 2012·Granted Nov 18, 2014·1 cites·48 claims
- 1853US2007212885A1Method and composition for plasma etching of a self-aligned contact openingTRAPP SHANE J·Filed 2007·Application pending·0 cites
- 1953US2007148965A1Method and composition for plasma etching of a self-aligned contact openingTRAPP SHANE J·Filed 2007·Application pending·0 cites
- 2051US10930548B2Methods of forming an apparatus for making semiconductor dievesMICRON TECHNOLOGY INC·Filed 2019·Granted Feb 23, 2021·0 cites·17 claims
- 2151US9741580B2Substrate mask patterns, methods of forming a structure on a substrate, methods of forming a square lattice pattern from an oblique lattice pattern, and methods of forming a pattern on a substrateMICRON TECHNOLOGY INC·Filed 2015·Granted Aug 22, 2017·0 cites·21 claims
- 2246US2006281311A1Integrated circuitryTRAPP SHANE J·Filed 2005·Application pending·0 cites
- 2344US2015340611A1Method for a dry exhumation without oxidation of a cell and source lineSONY CORP·Filed 2014·Application pending·0 cites
- 2441US6806197B2Method of forming integrated circuitry, and method of forming a contact openingMICRON TECHNOLOGY INC·Filed 2001·Granted Oct 19, 2004·4 cites·106 claims
- 2540US2002123234A1Method and composition for plasma etching of a self-aligned contact openingFiled 2001·Application pending·0 cites
- 2630US7291895B2Integrated circuitryMICRON TECHNOLOGY INC·Filed 2003·Granted Nov 6, 2007·0 cites·44 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →