US2006281311A1PendingUtilityA1

Integrated circuitry

46
Individually held — no corporate assignee on recordPriority: Aug 7, 2001Filed: Oct 19, 2005Published: Dec 14, 2006
Est. expiryAug 7, 2021(expired)· nominal 20-yr term from priority
Inventors:Shane J. TrappBrian F. Lawlor
H10P 32/20H10P 30/40H10P 14/69433H10P 95/066H10P 50/692H10P 50/283H10P 14/69215H10P 14/6539H10P 14/6518H10P 14/662H10W 20/069Y10S257/90H10D 84/0149H10D 84/0147H10D 84/038H10D 64/021
46
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Claims

Abstract

A silicon nitride comprising layer formed over a semiconductor substrate includes Al, Ga or a mixture thereof. A silicon dioxide comprising layer is formed proximate thereto. The silicon dioxide comprising layer is removed substantially selectively relative to the silicon nitride comprising layer, with the Al, Ga or a mixture thereof enhancing selectivity to the silicon nitride comprising layer during the removal. A substantially undoped silicon dioxide comprising layer formed over a semiconductor substrate includes B, Al, Ga or mixtures thereof. A doped silicon dioxide comprising layer is formed proximate thereto. The doped silicon dioxide comprising layer is removed substantially selectively relative to the substantially undoped silicon dioxide comprising layer, with the B, Al, Ga or mixtures thereof enhancing selectivity to the substantially undoped silicon dioxide comprising layer during the removal. Integrated circuitry is also disclosed.

Claims

exact text as granted — not AI-modified
1 - 88 . (canceled)  
   
   
       89 . A method of forming integrated circuitry comprising: 
 forming a silicon nitride-comprising layer over a semiconductor substrate;    forming an opening through the silicon nitride-comprising layer;    forming at least one enriched region within the silicon nitride-comprising layer, the enriched region comprising Al, Ga or a mixture thereof;    forming a silicon dioxide-comprising layer over the silicon nitride-comprising layer to within the opening;    removing the silicon dioxide-comprising layer substantially selectively relative to the silicon nitride-comprising layer and leaving at least some of the silicon dioxide-comprising layer within the opening.    
   
   
       90 . The method of  claim 89  wherein the enriched region is formed before forming the opening.  
   
   
       91 . The method of  claim 89  wherein the enriched region is formed after forming the opening.  
   
   
       92 . The method of  claim 89  comprising forming said opening into semiconductive material of the semiconductor substrate below the silicon nitride-comprising layer.  
   
   
       93 . The method of  claim 89  wherein the silicon nitride-comprising layer has an outer surface, the enriched region extending to at least a portion of the outer surface.  
   
   
       94 . The method of  claim 89  wherein the silicon nitride-comprising layer has an outer surface, the enriched region being spaced from the outer surface.  
   
   
       95 . The method of  claim 89  wherein the enriched region comprises Al.  
   
   
       96 . The method of  claim 89  wherein the enriched region comprises Ga.  
   
   
       97 . The method of  claim 89  wherein the enriched region comprises Al and Ga.  
   
   
       98 . The method of  claim 89  further comprising annealing the silicon nitride-comprising layer prior to the removing.  
   
   
       99 . The method of  claim 89  wherein the silicon dioxide-comprising layer is formed on the silicon nitride-comprising layer.  
   
   
       100 . The method of  claim 89  wherein the silicon dioxide-comprising layer is substantially undoped.  
   
   
       101 . The method of  claim 89  wherein the silicon dioxide-comprising layer is doped.  
   
   
       102 . The method of  claim 89  wherein the removing comprises etching.  
   
   
       103 . A method of forming integrated circuitry comprising: 
 forming a silicon nitride-comprising layer over a semiconductor substrate;    forming an opening through the silicon nitride-comprising layer;    implanting at least one of Al and Ga into the silicon nitride-comprising layer;    forming a silicon dioxide-comprising layer over the silicon nitride-comprising layer to within the opening;    removing the silicon dioxide-comprising layer substantially selectively relative to the silicon nitride-comprising layer and leaving at least some of the silicon dioxide-comprising layer within the opening.    
   
   
       104 . The method of  claim 103  wherein the implanting occurs before forming the opening.  
   
   
       105 . The method of  claim 103  wherein the implanting occurs after forming-the opening.  
   
   
       106 . The method of  claim 103  comprising forming said opening into semiconductive material of the semiconductor substrate below the silicon nitride-comprising layer.  
   
   
       107 . The method of  claim 103  comprising implanting Al.  
   
   
       108 . The method of  claim 103  comprising implanting Ga.  
   
   
       109 . The method of  claim 103  wherein the silicon nitride-comprising layer has an outer surface, the implanting forming an implanted region which extends to at least a portion of the outer surface.  
   
   
       110 . The method of  claim 103  wherein the silicon nitride-comprising layer has an outer surface, the implanting forming an implanted region which is spaced from the outer surface.  
   
   
       111 . The method of  claim 103  comprising implanting Al and Ga.  
   
   
       112 . The method of  claim 89  further comprising annealing the silicon nitride-comprising layer prior to the removing.  
   
   
       113 . The method of  claim 89  wherein the silicon dioxide-comprising layer is formed on the silicon nitride-comprising layer.  
   
   
       114 . The method of  claim 89  wherein the silicon dioxide-comprising layer is substantially undoped.  
   
   
       115 . The method of  claim 89  wherein the silicon dioxide-comprising layer is doped.

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