Inventor · disambiguated record
Shih-Hung Tsai
Also filed as: TSAI SHIH-HUNG
89 granted patents·11 pending applications·459 citations·filing 2011–2025
99Inventor score
Top patents by PatentIndex Score
100 records- 0198US9530778B1Semiconductor devices having metal gate and method for manufacturing semiconductor devices having metal gateUNITED MICROELECTRONICS CORP·Filed 2015·Granted Dec 27, 2016·40 cites·11 claims
- 0298US9349833B1Semiconductor device and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted May 24, 2016·32 cites·11 claims
- 0397US9123659B1Method for manufacturing finFET deviceUNITED MICROELECTRONICS CORP·Filed 2014·Granted Sep 1, 2015·30 cites·12 claims
- 0496US8470714B1Method of forming fin structures in integrated circuitsTSAI SHIH-HUNG·Filed 2012·Granted Jun 25, 2013·44 cites·10 claims
- 0596US8441072B2Non-planar semiconductor structure and fabrication method thereofTSAI SHIH-HUNG·Filed 2011·Granted May 14, 2013·27 cites·19 claims
- 0695US9502410B1Semiconductor structure and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2015·Granted Nov 22, 2016·13 cites·8 claims
- 0795US9142641B1Method for manufacturing finFETUNITED MICROELECTRONICS CORP·Filed 2014·Granted Sep 22, 2015·21 cites·10 claims
- 0895US8664060B2Semiconductor structure and method of fabricating the sameLIU AN-CHI·Filed 2012·Granted Mar 4, 2014·22 cites·20 claims
- 0994US12027600B2Nanowire transistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Granted Jul 2, 2024·1 cites·10 claims
- 1094US9704737B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jul 11, 2017·10 cites·6 claims
- 1194US9559164B2Nanowire transistor device and method for manufacturing nanowire transistor deviceUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jan 31, 2017·9 cites·10 claims
- 1294US9552978B1Method of decreasing fin bendingUNITED MICROELECTRONICS CORP·Filed 2016·Granted Jan 24, 2017·11 cites·7 claims
- 1394US8669618B2Manufacturing method for semiconductor device having metal gateFU SSU-I·Filed 2011·Granted Mar 11, 2014·20 cites·7 claims
- 1493US8466502B2Metal-gate CMOS deviceTSAI SHIH-HUNG·Filed 2011·Granted Jun 18, 2013·17 cites·8 claims
- 1593US8278184B1Fabrication method of a non-planar transistorCHEN YING-TSUNG·Filed 2011·Granted Oct 2, 2012·24 cites·10 claims
- 1692US9484263B1Method of removing a hard mask on a gateUNITED MICROELECTRONICS CORP·Filed 2015·Granted Nov 1, 2016·8 cites·16 claims
- 1791US9455194B1Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2015·Granted Sep 27, 2016·7 cites·6 claims
- 1889US9627268B2Method for fabricating semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2015·Granted Apr 18, 2017·5 cites·5 claims
- 1988US9054187B2Semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2013·Granted Jun 9, 2015·8 cites·12 claims
- 2088US8426277B2Semiconductor processLIN CHIEN-LIANG·Filed 2011·Granted Apr 23, 2013·9 cites·22 claims
- 2187US12302608B2Nanowire transistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2024·Granted May 13, 2025·0 cites·5 claims
- 2287US10868148B2Rinse process after forming fin-shaped structureUNITED MICROELECTRONICS CORP·Filed 2018·Granted Dec 15, 2020·3 cites·1 claims
- 2387US8722501B2Method for manufacturing multi-gate transistor deviceTSAI SHIH-HUNG·Filed 2011·Granted May 13, 2014·8 cites·12 claims
- 2485US9653290B2Method for manufacturing nanowire transistor deviceUNITED MICROELECTRONICS CORP·Filed 2016·Granted May 16, 2017·3 cites·10 claims
- 2585US8592271B2Metal-gate CMOS device and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2013·Granted Nov 26, 2013·7 cites·10 claims
- 2683US12501639B2Rinse process after forming fin-shaped structureUNITED MICROELECTRONICS CORP·Filed 2023·Granted Dec 16, 2025·0 cites·13 claims
- 2783US12289088B2Surface acoustic wave device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Apr 29, 2025·1 cites·16 claims
- 2883US11227944B2HEMT and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2019·Granted Jan 18, 2022·2 cites·9 claims
- 2983US9947792B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2015·Granted Apr 17, 2018·3 cites·2 claims
- 3083US9754938B1Semiconductor device and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Sep 5, 2017·3 cites·8 claims
- 3183US9105685B2Method of forming shallow trench isolation structureUNITED MICROELECTRONICS CORP·Filed 2013·Granted Aug 11, 2015·5 cites·18 claims
- 3283US2025293663A1Surface acoustic wave device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 3382US10211313B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2017·Granted Feb 19, 2019·3 cites·8 claims
- 3482US10062770B2Complementary metal oxide semiconductor field effect transistor, metal oxide semiconductor field effect transistor and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2016·Granted Aug 28, 2018·3 cites·6 claims
- 3582US2025241011A1Nanowire transistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 3681US9508715B1Semiconductor structureUNITED MICROELECTRONICS CORP·Filed 2015·Granted Nov 29, 2016·3 cites·19 claims
- 3781US9384978B1Method of forming trenchesUNITED MICROELECTRONICS CORP·Filed 2015·Granted Jul 5, 2016·3 cites·19 claims
- 3881US8642457B2Method of fabricating semiconductor deviceFU SSU-I·Filed 2011·Granted Feb 4, 2014·6 cites·20 claims
- 3980US10056467B2Semiconductor fin structure and method of forming the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Aug 21, 2018·2 cites·9 claims
- 4080US9653603B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted May 16, 2017·2 cites·17 claims
- 4179US11929431B2HEMT and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2023·Granted Mar 12, 2024·0 cites·9 claims
- 4279US10643997B2Semiconductor device with metal gatesUNITED MICROELECTRONICS CORP·Filed 2017·Granted May 5, 2020·2 cites·5 claims
- 4379US10032672B1Method of fabricating a semiconductor device having contact structuresUNITED MICROELECTRONICS CORP·Filed 2017·Granted Jul 24, 2018·3 cites·16 claims
- 4479US9847402B2Method of using polysilicon as stop layer in a replacement metal gate processUNITED MICROELECTRONICS CORP·Filed 2017·Granted Dec 19, 2017·2 cites·7 claims
- 4578US9786662B1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2016·Granted Oct 10, 2017·2 cites·19 claims
- 4678US9076870B2Method for forming fin-shaped structureUNITED MICROELECTRONICS CORP·Filed 2013·Granted Jul 7, 2015·4 cites·17 claims
- 4778US8987096B2Semiconductor processCHEN YING-TSUNG·Filed 2012·Granted Mar 24, 2015·5 cites·15 claims
- 4876US9268896B1Method of forming a photomaskUNITED MICROELECTRONICS CORP·Filed 2014·Granted Feb 23, 2016·4 cites·20 claims
- 4975US9536792B2Complementary metal oxide semiconductor field effect transistor, metal oxide semiconductor field effect transistor and manufacturing method thereofUNITED MICROELECTRONICS CORP·Filed 2013·Granted Jan 3, 2017·3 cites·16 claims
- 5074US11670710B2HEMT and method of fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Jun 6, 2023·0 cites·11 claims
Showing the top 50 of 100 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →