Inventor · disambiguated record
Shih-Jung Tu
Also filed as: TU SHIH-JUNG
8 granted patents·7 pending applications·15 citations·filing 2008–2025
79Inventor score
Top patents by PatentIndex Score
15 records- 0183US9947678B2Wing-type projection between neighboring access transistors in memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 17, 2018·4 cites·20 claims
- 0281US9437603B2Wing-type projection between neighboring access transistors in memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 6, 2016·5 cites·19 claims
- 0377US12040397B2Gate electrode extending into a shallow trench isolation structure in high voltage devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 16, 2024·0 cites·20 claims
- 0475US7875520B2Method of forming CMOS transistorUNITED MICROELECTRONICS CORP·Filed 2008·Granted Jan 25, 2011·6 cites·17 claims
- 0575US2024339533A1Gate electrode extending into a shallow trench isolation structure in high voltage devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0673US2025267933A1Method of forming high voltage transistor and structure resulting therefromTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0772US12317584B2Method of forming high voltage transistor and structure resulting therefromTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 27, 2025·0 cites·20 claims
- 0867US11705515B2Gate electrode extending into a shallow trench isolation structure in high voltage devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 18, 2023·0 cites·20 claims
- 0962US12471329B2Semiconductor structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
- 1057US2025194144A1Semiconductor device having contact field plate (cfp) and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1156US2025194132A1Semiconductor device having split gates and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1256US2024347626A1Ldmos transistor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1339US2009186475A1Method of manufacturing a MOS transistorTING SHYH-FANN·Filed 2008·Application pending·0 cites
- 1431US2017186607A1Method of forming a semiconductor deviceUNITED MICROELECTRONICS CORP·Filed 2015·Application pending·0 cites
- 1530US9761687B2Method of forming gate dielectric layer for MOS transistorUNITED MICROELECTRONICS CORP·Filed 2015·Granted Sep 12, 2017·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →