Inventor · disambiguated record
Shiang-Bau Wang
Also filed as: WANG SHIANG-BAU
79 granted patents·8 pending applications·696 citations·filing 1999–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD49TAIWAN SEMICONDUCTOR MFG17WANG SHIANG-BAU8APPLIED MATERIALS INC4KAO TA-WEI2
Top patents by PatentIndex Score
87 records- 0199US11728407B2Partial directional etch method and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 15, 2023·6 cites·20 claims
- 0298US6586886B1Gas distribution plate electrode for a plasma reactorAPPLIED MATERIALS INC·Filed 2001·Granted Jul 1, 2003·115 cites·46 claims
- 0397US11374110B2Partial directional etch method and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·5 cites·20 claims
- 0496US11329140B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 10, 2022·4 cites·20 claims
- 0596US10269787B2Metal gate structure cutting processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·13 cites·20 claims
- 0696US7947551B1Method of forming a shallow trench isolation structureTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted May 24, 2011·49 cites·20 claims
- 0795US11996466B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·2 cites·20 claims
- 0894US12027594B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 2, 2024·4 cites·20 claims
- 0993US12237416B2Cut-fin isolation regions and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 25, 2025·2 cites·20 claims
- 1093US8609497B2Method of dual EPI process for semiconductor deviceCHUNG HAN-PIN·Filed 2010·Granted Dec 17, 2013·28 cites·20 claims
- 1192US6201208B1Method and apparatus for plasma processing with control of ion energy distribution at the substratesWISCONSIN ALUMNI RES FOUND·Filed 1999·Granted Mar 13, 2001·207 cites·18 claims
- 1291US9613959B2Method of forming metal gate to mitigate antenna defectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 4, 2017·7 cites·20 claims
- 1391US8193094B2Post CMP planarization by cluster ION beam etchWANG SHIANG-BAU·Filed 2010·Granted Jun 5, 2012·11 cites·20 claims
- 1489US9218974B2Sidewall free CESL for enlarging ILD gap-fill windowTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 22, 2015·8 cites·20 claims
- 1589US8598675B2Isolation structure profile for gap fillingWANG SHIANG-BAU·Filed 2011·Granted Dec 3, 2013·9 cites·20 claims
- 1688US11069579B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·4 cites·20 claims
- 1788US9508814B2Integrated circuit having a contact etch stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 29, 2016·5 cites·20 claims
- 1888US8598661B2Epitaxial process for forming semiconductor devicesTAIWAN SEMICONDUCTOR MANFACTURING CO LTD·Filed 2013·Granted Dec 3, 2013·9 cites·13 claims
- 1988US8361338B2Hard mask removal methodTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Jan 29, 2013·7 cites·20 claims
- 2088US7301645B2In-situ critical dimension measurementTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Nov 27, 2007·14 cites·20 claims
- 2187US8900957B2Method of dual epi process for semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 2, 2014·7 cites·12 claims
- 2287US8383485B2Epitaxial process for forming semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2011·Granted Feb 26, 2013·7 cites·13 claims
- 2387US8093146B2Method of fabricating gate electrode using a hard mask with spacersWANG SHIANG-BAU·Filed 2010·Granted Jan 10, 2012·8 cites·21 claims
- 2487US6677712B2Gas distribution plate electrode for a plasma receptorAPPLIED MATERIALS INC·Filed 2003·Granted Jan 13, 2004·22 cites·14 claims
- 2587US6652712B2Inductive antenna for a plasma reactor producing reduced fluorine dissociationAPPLIED MATERIALS INC·Filed 2001·Granted Nov 25, 2003·29 cites·12 claims
- 2686US10481483B2Lithography mask and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 19, 2019·3 cites·20 claims
- 2786US8372755B2Multilayer hard maskTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 12, 2013·9 cites·21 claims
- 2885US10304178B2Method and system for diagnosing a semiconductor waferTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 28, 2019·5 cites·20 claims
- 2985US8071481B2Method for forming highly strained source/drain trenchesKAO TA-WEI·Filed 2009·Granted Dec 6, 2011·11 cites·9 claims
- 3085US7109085B2Etching process to avoid polysilicon notchingTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Sep 19, 2006·10 cites·27 claims
- 3185US6667577B2Plasma reactor with spoke antenna having a VHF mode with the spokes in phaseAPPLIED MATERIALS INC·Filed 2001·Granted Dec 23, 2003·28 cites·59 claims
- 3284US2024395598A1Semiconductor Device and MethodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3383US11056478B2Metal gate structure cutting processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 6, 2021·2 cites·20 claims
- 3483US8900956B2Method of dual EPI process for semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 2, 2014·5 cites·20 claims
- 3582US12057342B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·0 cites·20 claims
- 3682US10020198B1Semiconductor structure having low-k spacer and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 10, 2018·3 cites·18 claims
- 3782US8461015B2STI structure and method of forming bottom void in sameHUANG YU-LIEN·Filed 2010·Granted Jun 11, 2013·7 cites·20 claims
- 3882US2025331264A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3982US2024379820A1Air spacer and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4081US12414347B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 9, 2025·0 cites·20 claims
- 4181US10861746B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·2 cites·20 claims
- 4281US8822304B2Isolation structure profile for gap filingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 2, 2014·4 cites·20 claims
- 4381US8604562B2Post CMP planarization by cluster ion beam etchWANG SHIANG-BAU·Filed 2012·Granted Dec 10, 2013·4 cites·20 claims
- 4480US12237397B2Partial directional etch method and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 25, 2025·0 cites·20 claims
- 4580US12107149B2Air spacer and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 1, 2024·0 cites·20 claims
- 4679US7732878B2MOS devices with continuous contact etch stop layerTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jun 8, 2010·8 cites·9 claims
- 4779US2024379819A1Partial directional etch method and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4878US8853817B2Isolation structure profile for gap filingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 7, 2014·3 cites·20 claims
- 4977US2024290869A1Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 5076US11652155B2Air spacer and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 16, 2023·0 cites·20 claims
Showing the top 50 of 87 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →