Inventor · disambiguated record
Shigeyoshi Watanabe
Also filed as: WATANABE SHIGEYOSHI
32 granted patents·1 pending application·1,226 citations·filing 1982–2007
98Inventor score
Files withTOSHIBA KK28TOKYO SHIBAURA ELECTRIC CO2KABUSHIKI KASIHA TOSHIBA1TEIJIN LTD1WATANABE SHIGEYOSHI1
Top patents by PatentIndex Score
33 records- 0198US4800530ASemiconductor memory system with dynamic random access memory cellsKABUSHIKI KASIHA TOSHIBA·Filed 1987·Granted Jan 24, 1989·172 cites·11 claims
- 0297US5416350ASemiconductor device with vertical transistors connected in series between bit linesTOSHIBA KK·Filed 1994·Granted May 16, 1995·191 cites·21 claims
- 0392US4777625ADivided-bit line type dynamic semiconductor memory with main and sub-sense amplifiersTOSHIBA KK·Filed 1987·Granted Oct 11, 1988·78 cites·7 claims
- 0490US5396450ADynamic random access memory device with the combined open/folded bit-line pair arrangementTOSHIBA KK·Filed 1993·Granted Mar 7, 1995·67 cites·24 claims
- 0588US8204670B2Cruise control system using instruction sent from switchWATANABE SHIGEYOSHI·Filed 2007·Granted Jun 19, 2012·29 cites·24 claims
- 0687US4798977AWord line driver for use in a semiconductor memoryTOSHIBA KK·Filed 1987·Granted Jan 17, 1989·38 cites·5 claims
- 0785US5838038ADynamic random access memory device with the combined open/folded bit-line pair arrangementTOSHIBA KK·Filed 1995·Granted Nov 17, 1998·60 cites·14 claims
- 0884US5732010ADynamic random access memory device with the combined open/folded bit-line pair arrangementTOSHIBA KK·Filed 1996·Granted Mar 24, 1998·51 cites·11 claims
- 0984US5555519ADynamic random access memory device with the combined open/folded bit-line pair arrangementTOSHIBA KK·Filed 1994·Granted Sep 10, 1996·45 cites·34 claims
- 1084US5508957ANon-volatile semiconductor memory with NAND cell structure and switching transistors with different channel lengths to reduce punch-throughTOSHIBA KK·Filed 1994·Granted Apr 16, 1996·56 cites·6 claims
- 1180US5363325ADynamic semiconductor memory device having high integration densityTOSHIBA KK·Filed 1992·Granted Nov 8, 1994·46 cites·17 claims
- 1280US4996669AElectrically erasable programmable read-only memory with NAND memory cell structureTOSHIBA KK·Filed 1990·Granted Feb 26, 1991·47 cites·20 claims
- 1376US5892724ANAND-type dynamic RAM having temporary storage register and sense amplifier coupled to multi-open bit linesTOSHIBA KK·Filed 1997·Granted Apr 6, 1999·32 cites·10 claims
- 1475US6295241B1Dynamic random access memory deviceTOSHIBA KK·Filed 1994·Granted Sep 25, 2001·35 cites·15 claims
- 1575US5088060AElectrically erasable programmable read-only memory with NAND memory cell structureTOSHIBA KK·Filed 1990·Granted Feb 11, 1992·37 cites·21 claims
- 1675US4819207AHigh-speed refreshing rechnique for highly-integrated random-access memoryTOSHIBA KK·Filed 1987·Granted Apr 4, 1989·31 cites·12 claims
- 1775US4494219ANonvolatile read only memory deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1982·Granted Jan 15, 1985·22 cites·9 claims
- 1873US4733374ADynamic semiconductor memory deviceTOSHIBA KK·Filed 1986·Granted Mar 22, 1988·30 cites·10 claims
- 1961US5625602ANAND-type dynamic RAM having temporary storage register and sense amplifier coupled to multi-open bit linesTOSHIBA KK·Filed 1995·Granted Apr 29, 1997·18 cites·6 claims
- 2061US4811290ASemiconductor memory deviceTOSHIBA KK·Filed 1987·Granted Mar 7, 1989·17 cites·30 claims
- 2159USRE36993EDynamic random access memory device with the combined open/folded bit-line pair arrangementTOSHIBA KK·Filed 1996·Granted Dec 19, 2000·15 cites·7 claims
- 2254US6232822B1Semiconductor device including a bipolar transistor biased to produce a negative base current by the impact ionization mechanismTOSHIBA KK·Filed 1994·Granted May 15, 2001·13 cites·12 claims
- 2354US5717625ASemiconductor memory deviceTOSHIBA KK·Filed 1997·Granted Feb 10, 1998·15 cites·5 claims
- 2454US5194762AMos-type charging circuitTOSHIBA KK·Filed 1990·Granted Mar 16, 1993·16 cites·19 claims
- 2553US5060194ASemiconductor memory device having a bicmos memory cellTOSHIBA KK·Filed 1990·Granted Oct 22, 1991·15 cites·21 claims
- 2652US2004203310A1Protective garment against molten metalTEIJIN LTD·Filed 2004·Application pending·0 cites
- 2747US5397723AProcess for forming arrayed field effect transistors highly integrated on substrateTOSHIBA KK·Filed 1991·Granted Mar 14, 1995·13 cites·12 claims
- 2847US4531202ASemiconductor nonvolatile read only memory deviceTOKYO SHIBAURA ELECTRIC CO·Filed 1982·Granted Jul 23, 1985·6 cites·8 claims
- 2943US5038191ASemiconductor memory deviceTOSHIBA KK·Filed 1990·Granted Aug 6, 1991·9 cites·20 claims
- 3039US5467303ASemiconductor memory device having register groups for writing and reading dataTOSHIBA KK·Filed 1995·Granted Nov 14, 1995·6 cites·18 claims
- 3137US6292390B1Semiconductor deviceTOSHIBA KK·Filed 2001·Granted Sep 18, 2001·0 cites·12 claims
- 3236US4606011ASingle transistor/capacitor semiconductor memory device and method for manufactureTOSHIBA KK·Filed 1985·Granted Aug 12, 1986·7 cites·5 claims
- 3335US4831433ASemiconductor deviceTOSHIBA KK·Filed 1988·Granted May 16, 1989·9 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →