Inventor · disambiguated record
Siva P. Adusumilli
Also filed as: ADUSUMILLI SIVA P
108 granted patents·12 pending applications·334 citations·filing 2017–2025
99Inventor score
Top patents by PatentIndex Score
120 records- 0198US10192779B1Bulk substrates with a self-aligned buried polycrystalline layerGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 29, 2019·71 cites·12 claims
- 0298US9984936B1Methods of forming an isolated nano-sheet transistor device and the resulting deviceGLOBALFOUNDRIES INC·Filed 2017·Granted May 29, 2018·91 cites·20 claims
- 0397US11152520B1Photodetector with reflector with air gap adjacent photodetecting regionGLOBALFOUNDRIES US INC·Filed 2020·Granted Oct 19, 2021·4 cites·19 claims
- 0497US10461152B2Radio frequency switches with air gap structuresGLOBALFOUNDRIES INC·Filed 2017·Granted Oct 29, 2019·15 cites·20 claims
- 0597US10217846B1Vertical field effect transistor formation with critical dimension controlGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 26, 2019·21 cites·11 claims
- 0696US11316064B2Photodiode and/or PIN diode structuresGLOBALFOUNDRIES US INC·Filed 2020·Granted Apr 26, 2022·4 cites·19 claims
- 0796US10446643B2Sealed cavity structures with a planar surfaceGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 15, 2019·20 cites·15 claims
- 0896US10156676B1Waveguides with multiple airgaps arranged in and over a silicon-on-insulator substrateGLOBALFOUNDRIES INC·Filed 2018·Granted Dec 18, 2018·18 cites·20 claims
- 0995US11320589B1Grating couplers integrated with one or more airgapsGLOBALFOUNDRIES US INC·Filed 2020·Granted May 3, 2022·4 cites·15 claims
- 1094US12028053B2Structure including resistor network for back biasing FET stackGLOBALFOUNDRIES US INC·Filed 2021·Granted Jul 2, 2024·2 cites·18 claims
- 1194US11972999B2Unlanded thermal dissipation pillar adjacent active contactGLOBALFOUNDRIES US INC·Filed 2021·Granted Apr 30, 2024·2 cites·20 claims
- 1294US10393960B1Waveguides with multiple-level airgapsGLOBALFOUNDRIES INC·Filed 2018·Granted Aug 27, 2019·12 cites·20 claims
- 1393US11422303B2Waveguide with attenuatorGLOBALFOUNDRIES US INC·Filed 2020·Granted Aug 23, 2022·2 cites·18 claims
- 1493US11171095B1Active attack prevention for secure integrated circuits using latchup sensitive diode circuitGLOBALFOUNDRIES US INC·Filed 2020·Granted Nov 9, 2021·3 cites·17 claims
- 1593US11121097B1Active x-ray attack prevention deviceGLOBALFOUNDRIES US INC·Filed 2020·Granted Sep 14, 2021·3 cites·19 claims
- 1693US10651281B1Substrates with self-aligned buried dielectric and polycrystalline layersGLOBALFOUNDRIES INC·Filed 2018·Granted May 12, 2020·4 cites·20 claims
- 1792US11469225B2Device integration schemes leveraging a bulk semiconductor substrate having a <111 > crystal orientationGLOBALFOUNDRIES US INC·Filed 2020·Granted Oct 11, 2022·2 cites·20 claims
- 1892US10580893B2Sealed cavity structures with non-planar surface features to induce stressGLOBALFOUNDRIES INC·Filed 2018·Granted Mar 3, 2020·7 cites·19 claims
- 1991US11949034B2Photodetector with dual doped semiconductor materialGLOBALFOUNDRIES US INC·Filed 2022·Granted Apr 2, 2024·1 cites·20 claims
- 2090US11536914B2Photodetector array with diffraction gratings having different pitchesGLOBALFOUNDRIES US INC·Filed 2020·Granted Dec 27, 2022·2 cites·19 claims
- 2189US11380759B2Transistor with embedded isolation layer in bulk substrateGLOBALFOUNDRIES US INC·Filed 2020·Granted Jul 5, 2022·2 cites·20 claims
- 2289US10832940B2Bulk substrates with a self-aligned buried polycrystalline layerGLOBALFOUNDRIES INC·Filed 2018·Granted Nov 10, 2020·3 cites·13 claims
- 2389US10466514B1Electro-optic modulator with vertically-arranged optical pathsGLOBALFOUNDRIES INC·Filed 2018·Granted Nov 5, 2019·3 cites·20 claims
- 2488US11923446B2High electron mobility transistor devices having a silicided polysilicon layerGLOBALFOUNDRIES US INC·Filed 2021·Granted Mar 5, 2024·1 cites·17 claims
- 2588US11158535B2Multi-depth regions of high resistivity in a semiconductor substrateGLOBALFOUNDRIES US INC·Filed 2019·Granted Oct 26, 2021·4 cites·20 claims
- 2688US10983412B1Silicon photonic components fabricated using a bulk substrateGLOBALFOUNDRIES US INC·Filed 2019·Granted Apr 20, 2021·2 cites·20 claims
- 2788US10770374B2Through-silicon vias for heterogeneous integration of semiconductor device structuresGLOBALFOUNDRIES INC·Filed 2019·Granted Sep 8, 2020·5 cites·19 claims
- 2887US11127816B2Heterojunction bipolar transistors with one or more sealed airgapGLOBALFOUNDRIES US INC·Filed 2020·Granted Sep 21, 2021·2 cites·20 claims
- 2986US10903316B2Radio frequency switches with air gap structuresGLOBALFOUNDRIES INC·Filed 2019·Granted Jan 26, 2021·3 cites·20 claims
- 3086US10411107B2Semiconductor device with airgap spacer for transistor and related methodGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 10, 2019·6 cites·15 claims
- 3183US11264457B1Isolation trenches augmented with a trap-rich layerGLOBALFOUNDRIES US INC·Filed 2020·Granted Mar 1, 2022·1 cites·20 claims
- 3282US12419098B2Device integration schemes leveraging a bulk semiconductor substrate having a <111> crystal orientationGLOBALFOUNDRIES US INC·Filed 2024·Granted Sep 16, 2025·0 cites·20 claims
- 3382US11749559B2Bulk substrates with a self-aligned buried polycrystalline layerGLOBALFOUNDRIES US INC·Filed 2022·Granted Sep 5, 2023·0 cites·20 claims
- 3482US2025341676A1Photonic integrated circuit including plurality of discrete optical guard elementsGLOBALFOUNDRIES US INC·Filed 2025·Application pending·0 cites
- 3581US12389622B2High electron mobility transistor devices having a silicided polysilicon layerGLOBALFOUNDRIES US INC·Filed 2023·Granted Aug 12, 2025·0 cites·19 claims
- 3681US12243935B2High electron mobility transistor devices having a silicided polysilicon layerGLOBALFOUNDRIES US INC·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 3781US11515397B2III-V compound semiconductor layer stacks with electrical isolation provided by a trap-rich layerGLOBALFOUNDRIES US INC·Filed 2020·Granted Nov 29, 2022·1 cites·20 claims
- 3881US11322639B2Avalanche photodiodeGLOBALFOUNDRIES US INC·Filed 2020·Granted May 3, 2022·1 cites·19 claims
- 3981US11282740B2Bulk semiconductor structure with a multi-level polycrystalline semiconductor region and methodGLOBALFOUNDRIES US INC·Filed 2020·Granted Mar 22, 2022·1 cites·20 claims
- 4081US11195715B2Epitaxial growth constrained by a templateGLOBALFOUNDRIES US INC·Filed 2020·Granted Dec 7, 2021·1 cites·20 claims
- 4179US10833072B1Heterojunction bipolar transistors having bases with different elevationsGLOBALFOUNDRIES INC·Filed 2019·Granted Nov 10, 2020·2 cites·14 claims
- 4278US11764258B2Airgap isolation structuresGLOBALFOUNDRIES US INC·Filed 2020·Granted Sep 19, 2023·1 cites·20 claims
- 4378US11107884B2Sealed cavity structures with a planar surfaceGLOBALFOUNDRIES US INC·Filed 2019·Granted Aug 31, 2021·2 cites·19 claims
- 4478US11081561B2Field-effect transistors with vertically-serpentine gatesGLOBALFOUNDRIES US INC·Filed 2019·Granted Aug 3, 2021·2 cites·15 claims
- 4577US12027553B2Photodetector with buried airgap reflectorsGLOBALFOUNDRIES US INC·Filed 2022·Granted Jul 2, 2024·0 cites·19 claims
- 4675US12087764B2Device integration schemes leveraging a bulk semiconductor substrate having a <111> crystal orientationGLOBALFOUNDRIES US INC·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
- 4775US12002878B2Implanted isolation for device integration on a common substrateGLOBALFOUNDRIES US INC·Filed 2022·Granted Jun 4, 2024·0 cites·20 claims
- 4874US2024297216A1Semiconductor on insulator wafer with cavity structuresGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 4973US12342626B2Switches in bulk substrateGLOBALFOUNDRIES US INC·Filed 2023·Granted Jun 24, 2025·0 cites·19 claims
- 5073US11527432B2Bulk substrates with a self-aligned buried polycrystalline layerGLOBALFOUNDRIES INC·Filed 2020·Granted Dec 13, 2022·0 cites·19 claims
Showing the top 50 of 120 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →