Inventor · disambiguated record
Si-Young Choi
Also filed as: CHOI SI-YOUNG
89 granted patents·35 pending applications·1,090 citations·filing 1997–2025
99Inventor score
Files withSAMSUNG ELECTRONICS CO LTD80SAMSUNG DISPLAY CO LTD4CHOI SUNG HO3RYU JEONG-DO3SON YONG-HOON3
Top patents by PatentIndex Score
124 records- 0198US7074662B2Methods for fabricating fin field effect transistors using a protective layer to reduce etching damageSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 11, 2006·176 cites·43 claims
- 0296US8916460B1Semiconductor device and method for fabricating the sameKWON BYOUNG-HO·Filed 2014·Granted Dec 23, 2014·74 cites·8 claims
- 0396US7320908B2Methods of forming semiconductor devices having buried oxide patternsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 22, 2008·34 cites·14 claims
- 0494US8039902B2Semiconductor devices having Si and SiGe epitaxial layersSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 18, 2011·39 cites·15 claims
- 0594US7535061B2Fin-field effect transistors (Fin-FETs) having protection layersSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 19, 2009·23 cites·15 claims
- 0694US7323710B2Fin field effect transistors having multi-layer fin patternsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 29, 2008·84 cites·12 claims
- 0792US9627542B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Apr 18, 2017·6 cites·20 claims
- 0892US8906757B2Methods of forming patterns of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Dec 9, 2014·13 cites·20 claims
- 0992US8871104B2Method of forming pattern, reticle, and computer readable medium for storing program for forming patternPARK DONG-WOON·Filed 2011·Granted Oct 28, 2014·23 cites·25 claims
- 1092US7842566B2FinFET and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 30, 2010·20 cites·13 claims
- 1191US8324043B2Methods of manufacturing semiconductor devices with Si and SiGe epitaxial layersKIM JIN-BUM·Filed 2011·Granted Dec 4, 2012·13 cites·5 claims
- 1291US8304318B2Methods of fabricating MOS transistors having recesses with elevated source/drain regionsSON YONG-HOON·Filed 2011·Granted Nov 6, 2012·9 cites·10 claims
- 1391US8012828B2Recess gate transistorSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 6, 2011·23 cites·9 claims
- 1491US7148541B2Vertical channel field effect transistors having insulating layers thereonSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Dec 12, 2006·53 cites·34 claims
- 1590US7071048B2Methods of fabricating fin field effect transistors having capping insulation layersSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 4, 2006·40 cites·20 claims
- 1688US8039350B2Methods of fabricating MOS transistors having recesses with elevated source/drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 18, 2011·9 cites·22 claims
- 1788US7122871B2Integrated circuit field effect transistors including channel-containing fin having regions of high and low doping concentrationsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 17, 2006·35 cites·13 claims
- 1887US7521301B2Methods for fabricating integrated circuit field effect transistors including channel-containing fin having regions of high and low doping concentrationsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 21, 2009·10 cites·12 claims
- 1987US7394117B2Fin field effect transistors including epitaxial finsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jul 1, 2008·9 cites·13 claims
- 2087US6849520B2Method and device for forming an STI type isolation in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 1, 2005·38 cites·2 claims
- 2186US9190407B2Semiconductor device and method for fabricating the sameKWON BYOUNG-HO·Filed 2014·Granted Nov 17, 2015·5 cites·19 claims
- 2286US8803051B2Microwave ovenLEE SANG-RYUL·Filed 2009·Granted Aug 12, 2014·19 cites·13 claims
- 2386US7642589B2Fin field effect transistors having capping insulation layersSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 5, 2010·9 cites·6 claims
- 2484US8008698B2Semiconductor memory devices having vertical channel transistors and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 30, 2011·11 cites·18 claims
- 2583US8373165B2Semiconductor integrated circuit device and a method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Feb 12, 2013·4 cites·5 claims
- 2683US7176067B2Methods of fabricating fin field effect transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Feb 13, 2007·23 cites·24 claims
- 2780US10904790B2Method and apparatus for processing traffic in radio network systemSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 26, 2021·4 cites·20 claims
- 2880US7429504B2Heterogeneous group IV semiconductor substrates, integrated circuits formed on such substrates, and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 30, 2008·6 cites·16 claims
- 2980US6890823B2Methods of forming integrated circuits with thermal oxide layers on side walls of gate electrodes wherein the source and drain are higher than the gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 10, 2005·28 cites·30 claims
- 3078US7888246B2Semiconductor integrated circuit device and a method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 15, 2011·4 cites·17 claims
- 3178US7807543B2Methods of manufacturing trench isolation structures using selective plasma ion immersion implantation and deposition (PIIID)SAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Oct 5, 2010·8 cites·16 claims
- 3277US7141456B2Methods of fabricating Fin-field effect transistors (Fin-FETs) having protection layersSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 28, 2006·16 cites·13 claims
- 3376US6660613B2Method and device for forming an STI type isolation in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 9, 2003·18 cites·22 claims
- 3475US6391749B1Selective epitaxial growth method in semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted May 21, 2002·22 cites·18 claims
- 3574US7683405B2MOS transistors having recesses with elevated source/drain regionsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 23, 2010·12 cites·15 claims
- 3674US7185252B2Measurement circuit and method for serially merging single-ended signals to analyze themSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 27, 2007·3 cites·20 claims
- 3773US7268396B2Finfets having first and second gates of different resistivitiesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 11, 2007·15 cites·15 claims
- 3872US8691649B2Methods of forming recessed channel array transistors and methods of manufacturing semiconductor devicesPARK TAI-SU·Filed 2011·Granted Apr 8, 2014·4 cites·20 claims
- 3972US7459359B2Methods of fabricating vertical channel field effect transistors having insulating layers thereonSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 2, 2008·4 cites·12 claims
- 4071US8114735B2Method of manufacturing a non-volatile memory deviceKIM HONG-SUK·Filed 2007·Granted Feb 14, 2012·4 cites·15 claims
- 4171US8008154B2Methods of forming impurity containing insulating films and flash memory devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 30, 2011·3 cites·21 claims
- 4271US7579249B2Methods for fabricating DRAM semiconductor devices including silicon epitaxial and metal silicide layersSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 25, 2009·3 cites·7 claims
- 4371US6900102B2Methods of forming double gate electrodes using tunnel and trenchSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 31, 2005·13 cites·28 claims
- 4470US7871897B2Method of forming shallow trench isolation regions in devices with NMOS and PMOS regionsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jan 18, 2011·5 cites·20 claims
- 4569US7785985B2Methods of manufacturing semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 31, 2010·4 cites·19 claims
- 4667US9381711B2Screw press dewatering device using shearing bladeOH JEONG HWAN·Filed 2014·Granted Jul 5, 2016·3 cites·4 claims
- 4766US7205609B2Methods of forming semiconductor devices including fin structures and related devicesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 17, 2007·10 cites·24 claims
- 4866US7202688B2Output buffer circuit having signal path used for testing and integrated circuit and test method including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 10, 2007·11 cites·9 claims
- 4966US5863835AMethods of forming electrical interconnects on semiconductor substratesSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jan 26, 1999·33 cites·10 claims
- 5066US2008308845A1Heterogeneous Group IV Semiconductor SubstratesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
Showing the top 50 of 124 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →