Inventor · disambiguated record
Simone Rascuna'
Also filed as: RASCUNA' SIMONE
10 granted patents·14 pending applications·0 citations·filing 2019–2025
79Inventor score
Top patents by PatentIndex Score
24 records- 0182US12308235B2Manufacturing method of a semiconductor device with efficient edge structureST MICROELECTRONICS SRL·Filed 2023·Granted May 20, 2025·0 cites·17 claims
- 0278US11854809B2Manufacturing method of a semiconductor device with efficient edge structureST MICROELECTRONICS SRL·Filed 2022·Granted Dec 26, 2023·0 cites·18 claims
- 0377US2025393223A1Contextual formation of a junction barrier diode and a schottky diode in a mps device based on silicon carbide, and mps deviceST MICROELECTRONICS SRL·Filed 2025·Application pending·0 cites
- 0476US2025038060A1Silicon carbide power device with improved robustness and corresponding manufacturing processST MICROELECTRONICS SRL·Filed 2024·Application pending·0 cites
- 0574US11935884B2Overvoltage protection deviceST MICROELECTRONICS SRL·Filed 2022·Granted Mar 19, 2024·0 cites·18 claims
- 0673US12125762B2Silicon carbide power device with improved robustness and corresponding manufacturing processST MICROELECTRONICS SRL·Filed 2022·Granted Oct 22, 2024·0 cites·18 claims
- 0771US11545362B2Manufacturing method of a semiconductor device with efficient edge structureST MICROELECTRONICS SRL·Filed 2021·Granted Jan 3, 2023·0 cites·20 claims
- 0869US11177394B2Wide bandgap semiconductor switching device with wide area schottky junction, and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2020·Granted Nov 16, 2021·0 cites·21 claims
- 0968US12334346B2Method for manufacturing a SiC electronic device with reduced handling steps, and sic electronic deviceST MICROELECTRONICS SRL·Filed 2023·Granted Jun 17, 2025·0 cites·20 claims
- 1063US10651319B2Wide bandgap semiconductor switching device with wide area Schottky junction, and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2019·Granted May 12, 2020·0 cites·19 claims
- 1161US12266530B2Manufacturing method of an element of an electronic device having improved reliability, and related element, electronic device and electronic apparatusST MICROELECTRONICS SRL·Filed 2023·Granted Apr 1, 2025·0 cites·20 claims
- 1257US11784049B2Method for manufacturing a sic electronic device with reduced handling steps, and sic electronic deviceST MICROELECTRONICS SRL·Filed 2021·Granted Oct 10, 2023·0 cites·20 claims
- 1356US2025391785A1Sic-based electronic device with enhanced robustness and method for manufacturing the electronic deviceST MICROELECTRONICS INT NV·Filed 2025·Application pending·0 cites
- 1453US2024079237A1Method of manufacturing ohmic contacts of an electronic device, with thermal budget optimizationST MICROELECTRONICS SRL·Filed 2023·Application pending·0 cites
- 1552US2024178092A1Sic-based electronic device with multilayer and multifunctional passivation, and method of manufacturing the electronic deviceST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 1651US2025393273A1ELECTRONIC DEVICE BASED ON SiC HAVING IMPROVED ELECTRICAL PERFORMANCES AND MANUFACTURING METHODST MICROELECTRONICS INT NV·Filed 2025·Application pending·0 cites
- 1749US2025113506A1One-step front ohmic and schottky contact foramtion on sic power devices with laser annealingST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 1849US2025015145A1Method for creating an ohmic contact on a high-power electrical diodeST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 1948US2025046665A1Methods for improving passivation layer durabilityST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 2048US2023299173A1Forming an electronic device, such as a jbs or mps diode, based on 3c-sic, and 3c-sic electronic deviceST MICROELECTRONICS SRL·Filed 2023·Application pending·0 cites
- 2147US2023170390A1Sic-based electronic device with enhanced robustness, and method for manufacturing the electronic deviceST MICROELECTRONICS SRL·Filed 2022·Application pending·0 cites
- 2247US2025275161A1Method for regulating the schottky barrier height in a silicon carbide power diode, and power diodeST MICROELECTRONICS INT NV·Filed 2025·Application pending·0 cites
- 2347US2023170271A1Method of manufacturing an anchoring element of a sic-based electronic device, anchoring element, and electronic deviceST MICROELECTRONICS SRL·Filed 2022·Application pending·0 cites
- 2447US2022246771A1Vertical conduction electronic device comprising a jbs diode and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →