Inventor · disambiguated record
Simone Rascuná
Also filed as: RASCUNA' SIMONE · RASCUNÁ SIMONE
30 granted patents·9 pending applications·21 citations·filing 2008–2025
94Inventor score
Files withST MICROELECTRONICS SRL34ST MICROELECTRONICS INT NV3SAGGIO MARIO GIUSEPPE1ST MICROELECTRONICS TOURS SAS1
Top patents by PatentIndex Score
39 records- 0188US9748411B2Wide bandgap semiconductor switching device with wide area schottky junction, and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2016·Granted Aug 29, 2017·4 cites·20 claims
- 0287US11715769B2Silicon carbide diode with reduced voltage drop, and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2021·Granted Aug 1, 2023·2 cites·20 claims
- 0384US11869944B2Scalable MPS device based on SiCST MICROELECTRONICS SRL·Filed 2021·Granted Jan 9, 2024·1 cites·17 claims
- 0481US12302624B2Wide band gap semiconductor electronic device having a junction-barrier Schottky diodeST MICROELECTRONICS SRL·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 0581US2024243122A1Mosfet device of silicon carbide having an integrated diode and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2024·Application pending·0 cites
- 0679US11495508B2Silicon carbide power device with improved robustness and corresponding manufacturing processST MICROELECTRONICS SRL·Filed 2020·Granted Nov 8, 2022·1 cites·18 claims
- 0778US12364021B2Overvoltage protection deviceST MICROELECTRONICS SRL·Filed 2024·Granted Jul 15, 2025·0 cites·12 claims
- 0877US11916066B2MOSFET device of silicon carbide having an integrated diode and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2022·Granted Feb 27, 2024·0 cites·16 claims
- 0977US2025234570A1Wide band gap semiconductor electronic device having a junction-barrier schottky diodeST MICROELECTRONICS SRL·Filed 2025·Application pending·0 cites
- 1076US11018008B2Manufacturing method of a semiconductor device with efficient edge structureST MICROELECTRONICS SRL·Filed 2018·Granted May 25, 2021·1 cites·20 claims
- 1174US12224321B2Scalable MPS device based on SiCST MICROELECTRONICS SRL·Filed 2023·Granted Feb 11, 2025·0 cites·18 claims
- 1274US8901652B2Power MOSFET comprising a plurality of columnar structures defining the charge balancing regionSAGGIO MARIO GIUSEPPE·Filed 2010·Granted Dec 2, 2014·5 cites·32 claims
- 1374US2025022919A1DOPING ACTIVATION AND OHMIC CONTACT FORMATION IN A SiC ELECTRONIC DEVICE, AND SiC ELECTRONIC DEVICEST MICROELECTRONICS SRL·Filed 2024·Application pending·0 cites
- 1473US12051725B2Doping activation and ohmic contact formation in a SiC electronic device, and SiC electronic deviceST MICROELECTRONICS SRL·Filed 2023·Granted Jul 30, 2024·0 cites·17 claims
- 1571US11949025B2Wide band gap semiconductor electronic device having a junction-barrier Schottky diodeST MICROELECTRONICS SRL·Filed 2021·Granted Apr 2, 2024·0 cites·16 claims
- 1670US11270993B2MOSFET device of silicon carbide having an integrated diode and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2020·Granted Mar 8, 2022·0 cites·20 claims
- 1770US7838927B2Process for manufacturing a multi-drain electronic power device integrated in semiconductor substrate and corresponding deviceST MICROELECTRONICS SRL·Filed 2008·Granted Nov 23, 2010·4 cites·20 claims
- 1870US2025063785A1Silicon carbide diode with reduced voltage drop, and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2024·Application pending·0 cites
- 1969US12094933B2Silicon carbide diode with reduced voltage drop, and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2023·Granted Sep 17, 2024·0 cites·16 claims
- 2068US12125933B2Method for manufacturing a uv-radiation detector device based on sic, and uv- radiation detector device based on sicST MICROELECTRONICS SRL·Filed 2023·Granted Oct 22, 2024·0 cites·18 claims
- 2168US2025241036A1Scalable mps device based on sicST MICROELECTRONICS SRL·Filed 2025·Application pending·0 cites
- 2267US11532606B2Overvoltage protection deviceST MICROELECTRONICS TOURS SAS·Filed 2020·Granted Dec 20, 2022·0 cites·20 claims
- 2366US12426285B2Contextual formation of a junction barrier diode and a Schottky diode in a MPS device based on silicon carbide, and MPS deviceST MICROELECTRONICS SRL·Filed 2022·Granted Sep 23, 2025·0 cites·21 claims
- 2466US11670685B2Doping activation and ohmic contact formation in a SiC electronic device, and SiC electronic deviceST MICROELECTRONICS SRL·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
- 2566US2025176235A1Ohmic contact formation in a sic-based electronic deviceST MICROELECTRONICS INT NV·Filed 2025·Application pending·0 cites
- 2665US12094985B2Semiconductor MPS diode with reduced current-crowding effect and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2022·Granted Sep 17, 2024·0 cites·18 claims
- 2765US8012832B2Process for manufacturing a multi-drain electronic power device integrated in semiconductor substrate and corresponding deviceST MICROELECTRONICS SRL·Filed 2008·Granted Sep 6, 2011·3 cites·24 claims
- 2862US10707202B2MOSFET device of silicon carbide having an integrated diode and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2018·Granted Jul 7, 2020·0 cites·16 claims
- 2961US12249624B2Ohmic contact formation in a SiC-based electronic deviceST MICROELECTRONICS SRL·Filed 2021·Granted Mar 11, 2025·0 cites·16 claims
- 3061US11605751B2Method for manufacturing a UV-radiation detector device based on SiC, and UV-radiation detector device based on SiCST MICROELECTRONICS SRL·Filed 2021·Granted Mar 14, 2023·0 cites·10 claims
- 3160US12374545B2Process for working a wafer of 4H—SiC material to form a 3C—SiC layer in direct contact with the 4H—SiC materialST MICROELECTRONICS SRL·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
- 3259US10276729B2Wide bandgap semiconductor switching device with wide area Schottky junction, and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2017·Granted Apr 30, 2019·0 cites·18 claims
- 3358US11417778B2Semiconductor MPS diode with reduced current-crowding effect and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2020·Granted Aug 16, 2022·0 cites·18 claims
- 3456US2025107121A1Forming a schottky contact in an electronic device, such as a jbs or mps diode, and electronic device with schottky contactST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 3550US11869771B2Manufacturing method of an element of an electronic device having improved reliability, and related element, electronic device and electronic apparatusST MICROELECTRONICS SRL·Filed 2021·Granted Jan 9, 2024·0 cites·20 claims
- 3650US2024429286A1Front side ohmic contact formation for sic deviceST MICROELECTRONICS INT NV·Filed 2023·Application pending·0 cites
- 3744US12224358B2JBS device with improved electrical performances, and manufacturing process of the JBS deviceST MICROELECTRONICS SRL·Filed 2022·Granted Feb 11, 2025·0 cites·20 claims
- 3843US2011034010A1Process for manufacturing a multi-drain electronic power device integrated in semiconductor substrate and corresponding deviceST MICROELECTRONICS SRL·Filed 2010·Application pending·0 cites
- 3934US9711599B2Wide bandgap high-density semiconductor switching device and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2015·Granted Jul 18, 2017·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →