Inventor · disambiguated record
Song-Fu Liao
Also filed as: LIAO SONG-FU
13 granted patents·7 pending applications·10 citations·filing 2021–2025
85Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD20
Top patents by PatentIndex Score
20 records- 0198US11527649B1Ferroelectric field effect transistor devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·9 cites·20 claims
- 0293US12094935B2Method of selective film deposition and semiconductor feature made by the methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 17, 2024·1 cites·20 claims
- 0384US12324161B2Annealed seed layer to improve ferroelectric properties of memory layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 3, 2025·0 cites·20 claims
- 0483US2025275150A1Annealed seed layer to improve ferroelectric properties of memory layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0579US2024371947A1Method of selective film deposition and semiconductor feature made by the methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0677US11917831B2Annealed seed layer to improve ferroelectric properties of memory layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·0 cites·20 claims
- 0775US2025301657A13d lateral patterning via selective deposition for ferroelectric devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0874US2024373642A1Double gate metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (mfmis-fet) structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0973US11817498B2Ferroelectric field effect transistor devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 14, 2023·0 cites·20 claims
- 1072US11690228B2Annealed seed layer to improve ferroelectric properties of memory layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·0 cites·20 claims
- 1171US12453137B2Ferroelectric memory devices having improved ferroelectric properties and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
- 1271US11652148B2Method of selective film deposition and semiconductor feature made by the methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 16, 2023·0 cites·20 claims
- 1370US12363906B23D lateral patterning via selective deposition for ferroelectric devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
- 1470US11908936B2Double gate ferroelectric field effect transistor devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 20, 2024·0 cites·20 claims
- 1569US12150309B2Double gate metal-ferroelectric-metal-insulator-semiconductor field-effect transistor (MFMIS-FET) structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 19, 2024·0 cites·20 claims
- 1668US11810956B2In-situ thermal annealing of electrode to form seed layer for improving FeRAM performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 7, 2023·0 cites·20 claims
- 1768US2023369420A1In-situ thermal annealing of electrode to form seed layer for improving feram performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1866US2022352379A1Ferroelectric memory devices having improved ferroelectric properties and methods of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Application pending·0 cites
- 1962US12289890B2Method of fabricating transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 29, 2025·0 cites·20 claims
- 2050US2023262989A1Multi-channel ferroelectric memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →